amkor CABGA 56
Abstract: chiparray amkor CABGA 8X8 CTBGA CABGA 17 x 17 thermal resistance CABGA CVBGA MO-195 8x8 64 footprint amkor cabga
Text: LAMINATE data sheet CABGA/CTBGA/CVBGA Features: ChipArray Packages: Amkor’s ChipArray® packages are laminatebased Ball Grid Array BGA packages that are compatible with established SMT mounting processes. The near-chip-size standard outlines offer a broad selection of ball array pitch, count,
|
Original
|
|
PDF
|
MC68EC030
Abstract: VT100 case 831-01 DSA0039281
Text: Order this document by MC68EC030UMAD/AD REV 2 MC68EC030 Addendum MC68EC030 32-Bit Embedded Controller User's Manual April 17, 1996 This addendum to the initial release of the MC68EC030 User's provides additional information not included in the original or corrections to the original text . This document and other information on this product is
|
Original
|
MC68EC030UMAD/AD
MC68EC030
MC68EC030
32-Bit
VT100
case 831-01
DSA0039281
|
PDF
|
MC68EC030
Abstract: VT100 TQFP 144 PACKAGE DIMENSION MC68EC030 pin
Text: Freescale Semiconductor, Inc. Order this document by MC68EC030UMAD/AD REV 2 MC68EC030 Addendum Freescale Semiconductor, Inc. MC68EC030 32-Bit Embedded Controller User's Manual April 17, 1996 This addendum to the initial release of the MC68EC030 User's provides additional information not included
|
Original
|
MC68EC030UMAD/AD
MC68EC030
MC68EC030
32-Bit
VT100
TQFP 144 PACKAGE DIMENSION
MC68EC030 pin
|
PDF
|
LVTTL18
Abstract: LSI Rapidchip epbga DB06-000160-04 DB06-000471-01
Text: DATASHEET Entry-Level RapidChip Platform ASIC Slices RC1812, RC18Si150, RC18Si184 October 2005 Advance ® DB08-000300-00 This document is advance. As such, it describes a product under development. This information is intended to help you evaluate the product. LSI Logic reserves
|
Original
|
RC1812,
RC18Si150,
RC18Si184
DB08-000300-00
DB08-000300-00,
EBG512,
LVTTL18
LSI Rapidchip
epbga
DB06-000160-04
DB06-000471-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory Hardware features FEATURES Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when
|
Original
|
W764M32V-XSBX
W764M32V1-XBX
64Mx32
W764M32V1-XBX"
|
PDF
|
nokia 1600 schematic diagram
Abstract: TUNDRA Tsi568 Tundra Tsi568a Alcatel fcbga theta jc FCBGA 10GIL TSI568 005 tx1 nortel
Text: Title Tsi568A Serial RapidIO Switch Hardware Manual Formal April 2007 80B8000_MA002_04 Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi568A, and Silicon Behind the Network, are trademarks of Tundra Semiconductor
|
Original
|
Tsi568A
80B8000
Tsi568A,
nokia 1600 schematic diagram
TUNDRA Tsi568
Tundra Tsi568a
Alcatel fcbga
theta jc FCBGA
10GIL
TSI568
005 tx1 nortel
|
PDF
|
N18N3625P1AQ-20C
Abstract: No abstract text available
Text: N18N1825P1A N18N1833P1A N18N3625P1A N18N3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs with Fast bus Turnaround FTRAMTM Architecture
|
Original
|
N18N1825P1A
N18N1833P1A
N18N3625P1A
N18N3633P1A
200MHz
N18N3625P1AQ-20C
|
PDF
|
N18N1825F1AG
Abstract: N18N3625F1AG N18N3625F1AQ-13C
Text: N18N1825F1A N18N1833F1A N18N3625F1A N18N3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture
|
Original
|
N18N1825F1A
N18N1833F1A
N18N3625F1A
N18N3633F1A
133MHz
N18N1825F1AG
N18N3625F1AG
N18N3625F1AQ-13C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N18S1825F1A N18S1833F1A N18S3625F1A N18S3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs Features • • • • • •
|
Original
|
N18S1825F1A
N18S1833F1A
N18S3625F1A
N18S3633F1A
133MHz
|
PDF
|
N18N3625P1AQ-20C
Abstract: No abstract text available
Text: N18N1825P1A N18N1833P1A N18N3625P1A N18N3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs with Fast bus Turnaround FTRAMTM Architecture
|
Original
|
N18N1825P1A
N18N1833P1A
N18N3625P1A
N18N3633P1A
200MHz
N18NXX
100-pin
119-ball
23166-B
N18N3625P1AQ-20C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N18S1825P1A N18S1833P1A N18S3625P1A N18S3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs Features • • • • • •
|
Original
|
N18S1825P1A
N18S1833P1A
N18S3625P1A
N18S3633P1A
200MHz
|
PDF
|
X1880
Abstract: N18N1825F1AG N18N3625F1AQ-13C
Text: N18N1825F1A N18N1833F1A N18N3625F1A N18N3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture
|
Original
|
N18N1825F1A
N18N1833F1A
N18N3625F1A
N18N3633F1A
133MHz
N18NXX
100-pin
119-ball
X1880
N18N1825F1AG
N18N3625F1AQ-13C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N18S1825F1A N18S1833F1A N18S3625F1A N18S3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs Features • • • • • •
|
Original
|
N18S1825F1A
N18S1833F1A
N18S3625F1A
N18S3633F1A
133MHz
N18SXX
100-pin
119-ball
|
PDF
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M64V-XBX 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a
|
Original
|
16Mx64
125MHz
WEDPN16M64V-XBX
WEDPN16M64V-XBX
128MByte
100MHz
|
PDF
|
|
|
WEDPN16M64V-XBX
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M64V-XBX 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a
|
Original
|
WEDPN16M64V-XBX
16Mx64
125MHz
128MByte
864-bit
100MHz
WEDPN16M64V-XBX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,
|
Original
|
WED3C7410E16M-XBX
WED3C7410E16M-XBX
7410E/SSRAM
7410E
400MHz
450MHz
16Mbits
|
PDF
|
WEDPN8M64VR-XBX
Abstract: No abstract text available
Text: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a
|
Original
|
WEDPN8M64VR-XBX
8Mx64
64MByte
512Mb)
432-bit
16-bit
WEDPN8M64VR-XBX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing
|
Original
|
8Mx64
2x8Mx32
4x8Mx16
WEDPN8M64VR-XBX
WEDPN8M64VR-XBX
64MByte
512Mb
|
PDF
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED3C7410E16M-400BX RISC Microprocessor Multichip Package *PRELIMINARY OVERVIEW The WED3C7410E16M-400BX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight
|
Original
|
WED3C7410E16M-400BX
7410E/SSRAM
WED3C7410E16M-400BX
7410E
256Kx72
21mmx25mm,
400MHz
200MHz
100MHz
|
PDF
|
ci 7410
Abstract: 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX c16 abb
Text: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,
|
Original
|
WED3C7410E16M-XBX
WED3C7410E16M-XBX
7410E/SSRAM
7410E
400MHz
450MHz
16Mbits
7410E
ci 7410
WED3C750A8M-200BX
WED3C7558M-XBX
c16 abb
|
PDF
|
7410 frequency divider
Abstract: 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX
Text: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,
|
Original
|
WED3C7410E16M-XBX
WED3C7410E16M-XBX
7410E/SSRAM
7410E
400MHz
450MHz
16Mbits
7410E
7410 frequency divider
WED3C750A8M-200BX
WED3C7558M-XBX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED3C7410E16M-400BX RISC Microprocessor Multichip Package *PRELIMINARY OVERVIEW The WED3C7410E16M-400BX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight
|
Original
|
WED3C7410E16M-400BX
7410E/SSRAM
WED3C7410E16M-400BX
7410E
256Kx72
21mmx25mm,
400MHz
200MHz
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: White Electronic Designs WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456
|
Original
|
WEDPN16M64VR-XBX
WEDPN16M64VR-XBX
16MX64
128MByte
66MHz-133MHz
66MHz-125MHz
750mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM736FV4011 KM718FV4011 Prelim inary 128Kx36 & 256Kx18 SRAM FEATURES • 128Kx36 or 256Kx18 Organizations • 3.3V Core / 1.5V Output Power Supply • HSTL Input and Output Levels • Differential, HSTL Clock Inputs K,/K • Synchronous Read and Write Operation
|
OCR Scan
|
KM736FV4011
KM718FV4011
128Kx36
256Kx18
128Kx36
KM736FV4011H-5
KM736FV4011H-6
KM736FV4011H-7
|
PDF
|
