THERMAL CYCLING RELIABILITY Search Results
THERMAL CYCLING RELIABILITY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TCTH011AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type |
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| TCTH022AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function |
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| TCTH012AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function |
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| TCTH011BE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type |
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| TCTH021AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type |
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THERMAL CYCLING RELIABILITY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
smd transistor 647
Abstract: BUX84 BUX84S SC18
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BUX84S OT428 BUX84S smd transistor 647 BUX84 SC18 | |
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Contextual Info: Philips Semiconductors Product specification NPN high voltage Power transistor FEATURES • • • • • BUX84S SYMBOL QUICK REFERENCE DATA Fast switching Excellent thermal stability High thermal cycling performance Low thermal resistance Surface mounting package |
OCR Scan |
BUX84S BUX84S OT428 | |
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Contextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N60E SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance |
OCR Scan |
PHP10N60E PHP10N60E T0220AB) | |
PHW20N50EContextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHW20N50E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance |
Original |
PHW20N50E OT429 PHW20N50E | |
PHP12N50E
Abstract: PHW11N50E PHB11N50E PHP11N50E to247 pcb footprint
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PHB11N50E, PHW11N50E PHW11N50E OT429 PHB11N50E PHP12N50E PHP11N50E to247 pcb footprint | |
BYV133
Abstract: common cathode to220 BYV133 TO220
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BYV133, BYV133B BYV133 OT404 common cathode to220 BYV133 TO220 | |
PHB4N40E
Abstract: PHP2N60 PHP4N40 PHP4N40E
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PHP4N40E, PHB4N40E PHP4N40E O220AB) PHB4N40E PHP2N60 PHP4N40 | |
74118
Abstract: PBYR1525CT pbyr1525 SMD 547 DIODE TJ-108 DT138
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PBYL2525CT, PBYL2525CTB PBYL2525CT O220AB) OT404 YL2525CTB 74118 PBYR1525CT pbyr1525 SMD 547 DIODE TJ-108 DT138 | |
transistor P7nContextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP7N40E, PHB7N40E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance |
OCR Scan |
PHP7N40E, PHB7N40E PHP7N40E T0220AB) PHB7N40E transistor P7n | |
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Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N50E, PHB6N50E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance |
OCR Scan |
PHP6N50E, PHB6N50E PHP6N50E T0220AB) PHB6N50E | |
PHB9N60E
Abstract: PHP10N60E PHW9N60E to247 pcb footprint
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Original |
PHB9N60E, PHW9N60E PHW9N60E OT429 PHB9N60E PHP10N60E to247 pcb footprint | |
PHP10N60EContextual Info: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP10N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance |
Original |
PHP10N60E O220AB) PHP10N60E | |
PHW14N50E
Abstract: C1520-0
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Original |
PHW14N50E OT429 PHW14N50E C1520-0 | |
PHP10N60EContextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP10N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance |
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PHP10N60E O220AB) PHP10N60E | |
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Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP450 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance |
Original |
IRFP450 IRFP450 OT429 | |
specification diode BY 127
Abstract: BYV118 BYV118B PBYR1045CTD PBYR645CT diode BY 127 SPECIFICATION
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BYV118, BYV118B BYV118 OT404 specification diode BY 127 PBYR1045CTD PBYR645CT diode BY 127 SPECIFICATION | |
PBYR1045
Abstract: PBYR1645 PBYR2045CT PBYR2045CTB
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PBYR2045CT, PBYR2045CTB PBYR2045CT OT404 PBYR1045 PBYR1645 | |
pbyr1525ct
Abstract: pbyr1525 20CT PBYL2525CT PBYL2525CTB PBYR2525CT
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Original |
PBYL2525CT, PBYL2525CTB PBYL2525CT O220AB) OT404 pbyr1525ct pbyr1525 20CT PBYR2525CT | |
smd diode marking code t3
Abstract: SMD 547 DIODE SCHOTTKY DIODES CROSS REFERENCE
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Original |
PBYL1525CT, PBYL1525CTB PBYL1525CT O220AB) OT404 YL1525CTB smd diode marking code t3 SMD 547 DIODE SCHOTTKY DIODES CROSS REFERENCE | |
PHB6N60E
Abstract: PHP3N60 PHP6N60E
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Original |
PHP6N60E, PHB6N60E PHP6N60E O220AB) PHB6N60E PHP3N60 | |
PHB3N60E
Abstract: PHP2N60 PHP3N60E
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Original |
PHP3N60E, PHB3N60E PHP3N60E O220AB) PHB3N60E PHP2N60 | |
BYV116B
Abstract: SOT404 BYV116 PBYR325CTD VA23 BYV116B 25
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Original |
BYV116, BYV116B BYV116 O220AB) OT404 SOT404 PBYR325CTD VA23 BYV116B 25 | |
PHD3055E
Abstract: PHB3055E PHP3055E
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Original |
PHP3055E, PHB3055E, PHD3055E PHP3055E O220AB) PHB3055E OT404 PHD3055E | |
tp142tContextual Info: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL3025CT, PBYL3025CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance |
Original |
PBYL3025CT, PBYL3025CTB PBYL3025CT O220AB) OT404 YL3025CTB tp142t | |