Untitled
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data HT-04503 HIGH TEMPERATURE DIELECTRIC Benefits • Very low thermal resistance of 0.05°Cin2/W (0.32°Ccm2/W) • High thermal conductivity of 2.2 W/m-K • High temperature applications • Lead-free solder compatible
|
Original
|
PDF
|
HT-04503
|
comparative tracking index ceramic
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data HT-07006 HIGH TEMPERATURE DIELECTRIC Benefits • Very low thermal resistance of 0.11°Cin2/W (0.71°Ccm2/W) • High thermal conductivity of 2.2 W/m-K • High temperature applications • Lead-free solder compatible
|
Original
|
PDF
|
HT-07006
comparative tracking index ceramic
|
UL796
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data HPL-03015 HIGH POWER LIGHTING DIELECTRIC Superior Dielectric Lowers Operating Temperatures Benefits • Very low thermal resistance of 0.02°Cin2/W (0.13°Ccm2/W) • High thermal conductivity of 3.0 W/m-K • High temperature applications
|
Original
|
PDF
|
HPL-03015
UL796
|
Untitled
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data MP-06503 MULTI-PURPOSE DIELECTRIC Benefits • Thermal resistance 0.09°Cin2/W (0.58°Ccm2/W) • Thermal conductivity of 1.3 W/m-K • Multi-Purpose applications • Lead-free solder compatible • Eutectic AuSn compatible
|
Original
|
PDF
|
MP-06503
|
Untitled
Abstract: No abstract text available
Text: CBM-360 Product Datasheet CBM-360 LEDs Features: • Extremely high optical output: Over 5,000 lumens from a single package white Table of Contents • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 6°C/W Technology Overview . . . . . .2
|
Original
|
PDF
|
CBM-360
PDS-001253
|
Untitled
Abstract: No abstract text available
Text: CBM-360 Product Datasheet CBM-360 LEDs Features: • Extremely high optical output: Over 5,000 lumens from a single package white Table of Contents • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 6°C/W Technology Overview. . . . . . 2
|
Original
|
PDF
|
CBM-360
PDS-001253
|
DWG-001216
Abstract: CBT-90 NCP15XH103J03RC 6500K
Text: PRODUCT DATA SHEET PhlatLight White LED Illumination Products CBT-90 White Features • Extremely high optical output: Over 2,000 lumens from a single chip White • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 ºC/W
|
Original
|
PDF
|
CBT-90
DWG-001216
NCP15XH103J03RC
6500K
|
Untitled
Abstract: No abstract text available
Text: CBT-90-UV-405 Product Datasheet CBT-120 Product PreliminaryPreliminary Datasheet CBT-90-UV-405 LEDs Features: •• >6.5 W of optical power from 400 nm to 410 nm. •• High thermal conductivity package . ›› Junction to heat sink thermal resistance of 0.9 °C/W
|
Original
|
PDF
|
CBT-90-UV-405Product
CBT-120
CBT-90-UV-405
PDS-001xxx
|
CBT-120
Abstract: PDS-001226 NCP15XH103J03RC LM2500 cbt-120-g-c11 NCP15XH103J03 KF300 RC11B DF-3 dwg001124
Text: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-120 Series Features • Extremely high optical output: Over 1225 Red Lumens Over 2000 Green lumens Over 470 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.7 ºC/W
|
Original
|
PDF
|
CBT-120
PDS-001226
NCP15XH103J03RC
LM2500
cbt-120-g-c11
NCP15XH103J03
KF300
RC11B
DF-3
dwg001124
|
CF 775
Abstract: cf775 JC200 HC100 NCP15XH103J03RC CBT-40-G-C21-JC200 R5631 A 1050 09
Text: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-40 Series Features • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 1.8 ºC/W
|
Original
|
PDF
|
CBT-40
CF 775
cf775
JC200
HC100
NCP15XH103J03RC
CBT-40-G-C21-JC200
R5631
A 1050 09
|
DWG-001216
Abstract: 001216 NCP15XH103J03RC dj bj 810 215R6 CBT-90 DNG14-250FL
Text: PRODUCT DATA SHEET PRELIMINARY PhlatLight LED Illumination Products CBT-90 RGB Features • Extremely high optical output: Over 810 Red Lumens Over 1800 Green lumens Over 450 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 ºC/W
|
Original
|
PDF
|
CBT-90
DWG-001216
001216
NCP15XH103J03RC
dj bj 810
215R6
DNG14-250FL
|
Untitled
Abstract: No abstract text available
Text: Thick Film Chip Resistor High Power Chip Resistor, wide terminal type Industry/Field: Automotive electronics, Industrial equipment Expansion of products line-up Excellent solder junction and high thermal conductivity with wide terminal • Development Target:
|
Original
|
PDF
|
|
slim optical drive connector pinout
Abstract: No abstract text available
Text: CBT-120-UV CBT-120 Product Product Datasheet CBT-120-UV LEDs Features: • Over 16.0 W of optical power typical from 382 nm to 392 nm. • High thermal conductivity package . Table of Contents Technology Overview . . . . . .2 Binning Structure . . . . . . . . . .3
|
Original
|
PDF
|
CBT-120-UVProduct
CBT-120
CBT-120-UV
PDS-001574
slim optical drive connector pinout
|
Untitled
Abstract: No abstract text available
Text: CBT-90-UV Product Datasheet CBT-120 Product Preliminary CBT-90-UV LEDs Features: • Greater than 6.5 W of optical power from 400 nm to 410 nm. • High thermal conductivity package . › Junction to heat sink thermal resistance of 0.9 °C/W • Luminus Big Chip LED technology for very high power density and uniform surface
|
Original
|
PDF
|
CBT-90-UVProduct
CBT-120
CBT-90-UV
CBT-90
PDS-002171
|
|
|
Untitled
Abstract: No abstract text available
Text: CBT-120-UV CBT-120 Product Product Datasheet CBT-120-UV LEDs Features: •• Over 16.0 W of optical power typical from 382 nm to 392 nm. Table of Contents Technology Overview. . . . . . 2 Binning Structure. . . . . . . . . . 3 •• High thermal conductivity package .
|
Original
|
PDF
|
CBT-120-UVProduct
CBT-120
CBT-120-UV
PDS-001574
|
wacker silicone paste
Abstract: silicone paste p 12 IEC 326-3 Wacker Silicones P-12 Wacker Silicones pcb board of miniskiip 2 Wacker miniskiip board SEMIKRON BOARD wacker rubber
Text: MiniSKiiP - Technical Explanations Assembly Instructions 1 Preparation, surface specification To obtain the maximum thermal conductivity of the module, heat sink and module must fulfil the following specifications. 1.1 Heat sink ≤ 20 µm Heat sink > 10 µm
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: CBT-90-UV Product Datasheet CBT-120 Product Preliminary CBT-90-UV LEDs Features: •• Greater than 6.5 W of optical power from 400 nm to 410 nm. •• High thermal conductivity package . ›› Junction to heat sink thermal resistance of 0.9 °C/W •• Luminus Big Chip LED technology for very high power density and uniform surface
|
Original
|
PDF
|
CBT-90-UVProduct
CBT-120
CBT-90-UV
CBT-90
PDS-002171
|
1000H
Abstract: No abstract text available
Text: Crystal Plate Crystal Plate for Projectors • Features ● The crystal plate for projectors is large and transparent, and made of high-quality crystal. ● Excellent heat dissipation due to the high thermal conductivity of crystal. ● Processed at an angle that is not affected by double refraction
|
Original
|
PDF
|
450650nm
1000H
1000H
|
hfr 20w
Abstract: RFT250 flange RF termination 50 RFT050 RFT010
Text: High Power Flanged RF Terminators IRC Advanced Film Division RFTXXX-1 Series • Flange contruction • High frequency operation to 5GHz • High power dissipation to 250W • Long life, temperature stable thinfilm technology IRC’s RFTXXX-1 series utilizes the combined benefits of flange cooling and the high thermal conductivity of
|
Original
|
PDF
|
RFT010
RFT010;
RFT050;
RFT100;
RFT250
hfr 20w
RFT250
flange RF termination 50
RFT050
|
X-band Gan Hemt
Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Text: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2
|
Original
|
PDF
|
AN-011
AN-011:
X-band Gan Hemt
GaN amplifier
Gan on silicon substrate
rf gan amplifier
MMIC X-band amplifier
x-Band Hemt Amplifier
AlGaN/GaN HEMTs
Gan on silicon transistor
Gan transistor
k 1535
|
thermal impedance for IMS
Abstract: AB20-4 International Resistive Company
Text: International Resistive Company Advanced Film Division 4222 South Staples Street Corpus Christi, Texas 78411, USA Telephone: +1 361 992-7900 Facsimile: +1(361)992-3377 Email: morrist@irctt.com Website: www.irctt.com Test Report-AnothermTM vs IMS Substrate in Power LED
|
Original
|
PDF
|
27w/m-
thermal impedance for IMS
AB20-4
International Resistive Company
|
thermal conductivity sensor
Abstract: CO826
Text: FOR IMMEDIATE RELEASE, CO826 November 28, 2005 For more information, contact: Tom Morris, Applications Engineering Manager IRC, Inc. 361-985-3140 tom.morris@irctt.com Beth Polizzotto, BtB Marketing 919-872-8172 bpolizzotto@btbmarketing.com LEDs and power components keep cool on new substrate material…
|
Original
|
PDF
|
CO826
thermal conductivity sensor
CO826
|
Untitled
Abstract: No abstract text available
Text: M/A-COM Passive Component Division offers a wide selection of metallized 9 9 5 + % alumina AlaOa substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished surfaces of less than one microinch
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: AfaCßM Metallized Substrates For Microwave Integrated Circuits M/A-COM offers a wide selection of metallized 995 alumina AI2O3 substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished
|
OCR Scan
|
PDF
|
MIL-G-45204
|
