Untitled
Abstract: No abstract text available
Text: TECHNOLOGY BACKGROUND AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same
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DL160
DL320
Am29DL16x
Am29DL32x
Am29DL400
Am29DL800
2271A
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DL160
Abstract: No abstract text available
Text: TECHNOLOGY BACKGROUND Back AMD DL160 and DL320 Series Flash: New Densities, New Features 2 Am29DL16x and Am29DL32x Series: New Densities, New Features Introduction The DL160 series and DL320 series are the newest devices in the family of low power Simultaneous Read/Write Flash devices from AMD. These devices utilize the same
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DL160
DL320
Am29DL16x
Am29DL32x
Am29DL400
Am29DL800
2271A
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Untitled
Abstract: No abstract text available
Text: ACE25C200 2MB Serial Flash Memory Description The ACE25C200 is a 2M-bit 256K-byte Serial Flash memory, with advanced write protection mechanisms. The ACE25C200 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as
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ACE25C200
ACE25C200
256K-byte)
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Untitled
Abstract: No abstract text available
Text: ACE25C512 512K-BIT Serial Flash Memory Description The ACE25C512 is a 512K-BIT 64K-byte Serial Flash memory, with advanced write protection mechanisms. The ACE25C512 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as
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ACE25C512
512K-BIT
ACE25C512
512K-BIT
64K-byte)
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Untitled
Abstract: No abstract text available
Text: ACE25C100 1M-BIT Serial Flash Memory Description The ACE25C100 is a 1M-BIT 128K-byte Serial Flash memory, with advanced write protection mechanisms. The ACE25C100 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as
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ACE25C100
ACE25C100
128K-byte)
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Untitled
Abstract: No abstract text available
Text: ACE25C400 4MB Serial Flash Memory Description The ACE25C400 is a 4M-bit 512K-byte Serial Flash memory, with advanced write protection mechanisms. The ACE25C400 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as
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ACE25C400
ACE25C400
512K-byte)
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4 MBIT SERIAL FLASH MEMORY HYNIX
Abstract: Hynix Semiconductor America
Text: HY29DS322/HY29DS323 32 Megabit 4M x 8/2M x16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications
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HY29DS322/HY29DS323
4 MBIT SERIAL FLASH MEMORY HYNIX
Hynix Semiconductor America
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S29WS256N
Abstract: WS128N Am29BDSxxxG Am29BDDxxxG
Text: Migration to the S29WS256N Family 1.8 Volt Simultaneous Read/Write Burst Mode Flash Memory Application Note Introduction The S29WSxxxN is the latest advancement in the SpansionTM line of high speed, low voltage, Simultaneous Read/Write, Burst Mode devices. Following in the footsteps of our earlier Burst Mode parts, the S29WSxxxN family is a natural step
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S29WS256N
S29WSxxxN
Am29BDSxxxG
Am29BDSxxxH
Am29BDDxxxG
Am29BLxxxC
MBM29BS/FSxxDH
MBM29BS/BTxxLF
16-bank
WS128N
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bit 3501 Architecture
Abstract: HY29DS162 HY29DS163 D6547
Text: HY29DS162/HY29DS163 16 Megabit 2M x 8/1M x16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications
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HY29DS162/HY29DS163
bit 3501 Architecture
HY29DS162
HY29DS163
D6547
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Hyundai central locking
Abstract: bit 3501 Architecture HY29DL162 HY29DL163
Text: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications
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HY29DL162/HY29DL163
100pF
Hyundai central locking
bit 3501 Architecture
HY29DL162
HY29DL163
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INTEL 28F320J3
Abstract: Migration Guide for Intel StrataFlash Memory J 28F008S5 29066 231369
Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/120/150 ns Initial Access Speed for 32/64/128 Mbit Densities — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer
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28F128J3,
28F640J3,
28F320J3
x8/x16)
32-Byte
128-bit
--64-bit
x8/x16
INTEL 28F320J3
Migration Guide for Intel StrataFlash Memory J
28F008S5
29066
231369
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Datasheet Micron MLC
Abstract: 28F320J3A hex to 7 segment display 28F128K bga 6x8 Package E28F640J3 28F128J3A 28F160S3 28F320J5 28F320S3
Text: 3 Volt Intel StrataFlash Memory 28F128J3A, 28F640J3A, 28F320J3A x8/x16 Datasheet Product Features • ■ ■ Performance — 110/120/150 ns Initial Access Speed for 32/64/128 Mbit Densities — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer
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28F128J3A,
28F640J3A,
28F320J3A
x8/x16)
32-Byte
128-bit
--64-bit
Datasheet Micron MLC
28F320J3A
hex to 7 segment display
28F128K
bga 6x8 Package
E28F640J3
28F128J3A
28F160S3
28F320J5
28F320S3
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Untitled
Abstract: No abstract text available
Text: PRODUCT BULLETIN Am29DS323D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DS323D
16-Bit)
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TE28F640J3C-120
Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective
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28F128J3,
28F640J3,
28F320J3
x8/x16)
32-Byte
128-bit
--64-bit
High-Densi8/x16
56-Lead
TE28F640J3C-120
TE28F128J3C-120
INTEL 28F320J3
28F128J3
28F256K18
TE28F320J3C110
28F320J3
RC28F640J3C-120
28F640J3
28F640J3 reliability
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S29VS064R
Abstract: BA5 marking s29VS 29XS064R S29XS064R 29VS064R S29XS S29VS064
Text: S29VS/XS-R MirrorBit Flash Family S29VS064R, S29XS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) S29VS/XS-R MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29VS/XS-R
S29VS064R,
S29XS064R
16-bit)
XS064R
S29VS064R
BA5 marking
s29VS
29XS064R
S29XS064R
29VS064R
S29XS
S29VS064
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S29VS
Abstract: No abstract text available
Text: S29VS/XS-R MirrorBit Flash Family S29VS064R, S29XS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) S29VS/XS-R MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29VS/XS-R
S29VS064R,
S29XS064R
16-bit)
XS064R
S29VS
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Untitled
Abstract: No abstract text available
Text: S29VS/XS-R MirrorBit Flash Family S29VS064R, S29XS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) S29VS/XS-R MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29VS/XS-R
S29VS064R,
S29XS064R
16-bit)
XS064R
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S29VS064
Abstract: S29VS064R S29XS
Text: S29VS/XS-R MirrorBit Flash Family S29VS064R, S29XS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) S29VS/XS-R MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29VS/XS-R
S29VS064R,
S29XS064R
16-bit)
XS064R
S29VS064
S29VS064R
S29XS
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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DQ15-1
Abstract: S29VS S29VS064R S29XS064R S29VS064 S29XS
Text: S29VS/XS-R MirrorBit Flash Family S29VS064R, S29XS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) S29VS/XS-R MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29VS/XS-R
S29VS064R,
S29XS064R
16-bit)
XS064R
DQ15-1
S29VS
S29VS064R
S29XS064R
S29VS064
S29XS
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S29XS
Abstract: S29VS064
Text: S29VS/XS-R MirrorBit Flash Family S29VS064R, S29XS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) S29VS/XS-R MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29VS/XS-R
S29VS064R,
S29XS064R
16-bit)
XS064R
S29XS
S29VS064
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Untitled
Abstract: No abstract text available
Text: ADVANCE Quan tum d e v ic e s , in c . FLASH MEMORY 256K x 8 FEATURES • Five erase blocks: - 16KB boot block protected -Two 8KB parameter blocks -One 96KB memory block - One 128KB memory block • Low power: 100|j.A standby; 60mA active, M A X • 5V±10% read; 12V±5% write/erase
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128KB
100ns
100ns
00000H)
40-Pin
MT28F002
blll54
C1994.
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AM29LVXXX
Abstract: No abstract text available
Text: Am29LVxxx, 3.0 Volt-only Flash AMDJ1 Device Bus Operations, Command Definitions, and Write Operation Status INTRODUCTION DEVICE BUS OPERATIONS This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29LVxxx, 3.0 volt-only family of Flash
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Am29LVxxx
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Untitled
Abstract: No abstract text available
Text: s e m ic o n d u c t o r TABLE OF CONTENTS COMPARING SERIAL EEPROM INTER FACE STANDARDS 2.0 l2C BUS MEMORY SIZE 3.2.3 Write Mode 2.1 l2C Bus Concept 3.2.4 Typical Twp vs Maximum Twp 3.2.1 Read Mode 3.2.2 Sequential Read 2.2 EEPROM Memory on the l2C Bus
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AN-822
NM93Cxx,
NM93CSxx
256-bit
NM24Cxx
NM93CSxx,
NM24C03/05/09/17
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