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TH430 Abstract: Transistor TH430 D TH430 D 318bc Text: TH430 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE 0.500 4L FLG .112x45° L A FEATURES: E FULL R • PG = 14.5 dB min. at 220 W/30 MHz	Original	TH430 TH430 112x45° Transistor TH430 D TH430 D 318bc	PDF
TH430 Abstract: arco 429 diode gp 429 SD1728 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER P OUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION	Original	SD1728 TH430) TH430 SD1728 TH430 arco 429 diode gp 429 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e	PDF
Transistor TH430 D Abstract: TH430 TH430 D Text: TH430 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE 0.550 4L FLG E C FEATURES: • PG = 14.5 dB min. at 220 W/30 MHz	Original	TH430 TH430 Transistor TH430 D TH430 D	PDF
arco 427 Abstract: TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615 Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION	Original	SD1728 TH430) SD1728 TH430 arco 427 TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615	PDF
TH430 Abstract: SD1728 M177 Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and	Original	SD1728 TH430) 56MHz SD1728 TH430 TH430 SD1728 M177	PDF
TH430 Abstract: SD1728 M177 TH430 D Transistor TH430 D M177 SD1728 Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATION • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD = -30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN M177 epoxy sealed DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar	Original	SD1728 TH430) SD1728 TH430 TH430 SD1728 M177 TH430 D Transistor TH430 D M177	PDF
SD1730 Abstract: TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727 Text: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB	Original	SD1405 SD1487 SD1224-10 SD1407 SD1729 SD1730 SD1411 SD1733 SD1726 SD1727 SD1730 TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727	PDF
TH430 "cross reference" Abstract: "class AB Linear" HF TRANSISTORS class a linear hf C2075 SD1728 M177 SD1728 Text: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB	Original	SD1285* SD1405* SD1487 SD1224-10* SD1407* SD1729 SD1730 SD1411 SD1733 SD1726 TH430 "cross reference" "class AB Linear" HF TRANSISTORS class a linear hf C2075 SD1728 M177 SD1728	PDF
BUV-481 Abstract: BUV481 2n6571 BUS14 KSG31203 2SC2761 sanken str 450 bur21 ksg3 Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 970 Manufacturer Ie Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max (8) (8) 500n 500n .70u .70u .70u 1.0u 1.0u 1.0u 2.0 1.0u 1.0u .80u	Original	BUR24 BUS14 BUV481 Oisc-42 OT-93 O-247var BUV-481 BUV481 2n6571 KSG31203 2SC2761 sanken str 450 bur21 ksg3	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
FLS2- transistor Abstract: No abstract text available Text: r i 7 ^ 7# . S G S - T H O M S O N M M » [ IC T [ » ! ] [ 1 §_ S D 1728 (T H 4 30 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS > IMD - 30 dB ■ GOLD METALLIZATION . COMMON EMITTER	OCR Scan	SD1728 TH430 SD1728 FLS2- transistor	PDF
SD1730 Abstract: TH430 M153 "class AB Linear" hf 801733 SD1726 SD1728 M113 M164 SD1224-10 Text: SILICON POWER TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur communication equipment. .400 x .425 6LFL M153 .380 4LFL (M113) .550 Dia .500 4L STUD	OCR Scan	SD1285* SD1405* SD1487 SD1224-10* SD1407* SD1729 SD1730 TH430 M153 "class AB Linear" hf 801733 SD1726 SD1728 M113 M164 SD1224-10	PDF
SD1446 Abstract: SD140 an power 88-108 mhz M111 SD1224-10 M113 M164 SD1285 SD1405 SD1407 Text: S IL IC O N P O W E R T R A N S IS T O R S Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur com munication equipment. .400 x .425 6LFL M153 .380 4LFL	OCR Scan	SD1285* SD1405* SD1487 SD1224-10* SD1407* SD1729 SD1457 SD1460 SD1483 SD1013 SD1446 SD140 an power 88-108 mhz M111 SD1224-10 M113 M164 SD1285 SD1405 SD1407	PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G	PDF

TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan		PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF