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    Untitled

    Abstract: No abstract text available
    Text: ISSI IS93C66-3_ S 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM AUGUST 1995 FEATURES OVERVIEW • State-of-the-art architecture — Non-volatile data storage — Low voltage operation: 3.0V Vcc = 2.7V to 6.0V — Full TTL compatible inputs and outputs


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    PDF IS93C66-3_ 096-BIT EE81995C66 T004M0M IS93C66-3 IS93C66-3P IS93C66-3G IS93C66-3GR 600-mil IS93C66-3PI

    Untitled

    Abstract: No abstract text available
    Text: I S 2 2 C 0 1 0 _ ^ ISSI % ONE-TIME-PROGRAMMABLE VOICE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Voice content stored in 4 sections at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10.5 seconds - 5 KHz sampling is 12.8 seconds • Can operate at 3K to 16-11 KHz sampling


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    PDF 000D3S3 TGQ4404 VP1095C010 IS22C010 IS22C010N 300-mil 10D4MG4 QG0035S

    Untitled

    Abstract: No abstract text available
    Text: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer


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    PDF IS42S16128 131072-word 16-bit 16-bit 1DD4404 DR005-OA IS42S16128 DR005