TGM 350 Search Results

TGM-20-2004

Abstract: fet 20 dB 14 ghz
Contextual Info: TGM-20-2004 Module Amplifier 2 GHz - 20 GHz This Module Amplifier offers exceptional performance over the band 2 GHz to 20 GHz with 20 dBm P1dB output power and 14 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

5V1 85C

Abstract: bzx 86 c BZX 86c BZ 6V2 1N4189 BZX 24 85C 85C3V3 85c 3v3 85c 5V6 bz-86
Contextual Info: DO 41 CB 101 Types V Z T /l2 T * IV) nom 1N 4 7 6 3 A 1N 4764 A 91 1N4187 B 110 120 100 1N 4188 B 1N 4189 B rZT/»ZT* (n ) max >ZT ImA) 250 350 2,8 3000 0,25 0,09 5 69 10 2,5 2,3 2 0,09 0,10 5 5 76 84 9,4 450 3000 0,25 4000 0,25 4500 0,25 0,10 5 91 8,6 7,8

bf487

Abstract: transistor bf485
Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BF483; BF485; BF487 FEATURES PINNING • Low feedback capacitance. PIN APPLICATIONS • Intended for use in video output stages in black-and-white and in colour television receivers.

k 351 transistor

Abstract: MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR
Contextual Info: N AMER PH ILIPS/DISCRETE ObE D bbS3T31 0Q1S70M 1 X BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. A lso suitable as r.f. amplifier and oscillator in f.m. tuners.

SF150U13

Abstract: sf150 sf150n13 SF150Q13 SF150L13
Contextual Info: SF150 L,N,Q,R,U 13 THYRISTOR SILICON DIFFUSED TYPE HIGH POl.'ER CONTROL APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage : j _gQg : Vrrm ‘ . Average On-State Current : I'p(AV) = 1 ’’OA . Turn-Off Time

F25GZ51

Abstract: sf25gz51
Contextual Info: TOSHIBA SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE Ç F 7 R I7 R 1 Unit in mm MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Isolation Voltage • • !5.8 ±0.5 .

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG2500GXH24 DATA S G 2 5 0 0 G XH 2 4 J Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current

SH400EX29C

Contextual Info: TO SH IB A SH400EX29C TOSHIBA ALLOY-FREE HIGHT SPEED THYRISTOR SH400EX29C Unit in mm HIGH POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : V d r m ì = 2500V "R ûi-iû f i fwiy^ 1T7Û * P q û V P o ir o v o û \ r n l f o îTû « tT -n t» n r J

girl

Abstract: W528X W58100 W58101 W58102 W58103 W58104 W58105 W58106 W58110
Contextual Info: W581XX Design Guide ADPCM VOICE SYNTHESIZER Enhanced PowerSpeech  INTRODUCTION The W581XX family is an enhanced version of the W528X PowerSpeech synthesizer series. The W581XX family features a ADPCM synthesizer and an 8-bit D/A converter to generate various kinds

BUK583-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N -channel e nhancem ent m ode logic level field-effect pow er transistor in a plastic envelope suitable for surface m ount applications. T he device is intended fo r use in

Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • • PHT4N10T SYMBOL QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance

M9226

Abstract: TGS 308 S 8050 d 331 transistor TGA 345 tga 422 Ox51 s1507 MSS0607 5100H MSS1207
Contextual Info: MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 September 1996 3"/ 6"/ 9"/ 12" / 15" / 18" VOICE ROM Features Single power supply can operate at 2.4 V through 6.0 V. Current output can drive 8 ohm speaker with a transistor. The voice content can be separated to 32 sections.

btw15

Abstract: Brown Boveri btw btw 14
Contextual Info: W assergeküh lte Sendetriode W a te r-C o o le d T ra n s m ittin g Trio de Triode d'ém ission à refroidissem en t par eau B T W 15-3 Hauptdaten Q u ick Reference D ata Caractéristiques principales Pa max V a max la max *P 0 max f max 22 12 7 66 100 kW

L4937N

Contextual Info: SGS-THOMSON [M [R IUICT!©[iMeS L4937NPD DUAL 5V MULTIFUNCTION VOLTAGE REGULATOR P R E L IM IN A R Y D A T A - STANDBYOUTPUT VOLTAGE PRECISION 5V ±2% - OUTPUT2TRACKEDTOTHESTANDBYOUT­ PUT . OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE . VERY LOW QUIESCENT CURRENT, LESS

t 130 tube brown boveri

Abstract: amplificateur BF brown boveri tube
Contextual Info: L u ftg ekü h lte Sendetriode A ir-C o oled T ra n s m ittin g Trio de Trio de d'ém ission à refroidissem en t par a ir BTL 50-3 5 Hauptdaten Q u ick Reference D ata Caractéristiques principales Pa max Vg max l a max *P 0 max f max 45 15 18 182 30 kW kV

2N2322A

Abstract: 2N2322-29 rgk 20/2 2N2322 2N2325 2N2323 2N2323A C511
Contextual Info: SCR C5 Series 2N2322-29 2N2322A-28A 1.6A RMS Up to 400 Volts C511 Diamond Base * _ T he C5 S eries of Silicon C ontrolled R ectifiers a re rev erse blocking th y ris to rs fo r use in low pow er sw itch in g and control ap p licatio ns. T hey fe a tu re tw o ra n g e s of g a te se n si­

TK75020

Abstract: TRF toko DRV315 toko 5c T145 toko tk
Contextual Info: 9 y 4 < * Œ £ Ü â Is 4 » > a — 9 M 'M i c o l S i S ^ h E M b ^ y x r n % i S K 7 > ^ TK 7 5 0 2 0 $ - Í 0 T 7 ' 1; $•-> 3 > - 7 ^ o . T ; K 7 f E * ñ # ^ ^ 4 - < ^ M - t ' 5 > - ¿ ^ á 5 i9 i t O t r T t T J l - ' , TSE^»a»T$v>0 S £f£gß

Y12-Z

Abstract: HEF4067BP HEF4067BT y12Z ron 350
Contextual Info: HEF4067B MSI 16-CHANNEL ANALOGUE MULTIPLEXER/DEMULTIPLEXER The H E F 4067B is a 16-channel anajogue m u ltip le x e r/d e m u ltip le x e r w ith fo u r address in p u ts A q to A 3 , an active LOW enable in p u t (E), sixteen independent in p u ts /o u tp u ts (Y q to Y 15) and a com m on

MARKING Dt3

Abstract: LC marking code transistor marking VU SOT363 MARKING dt3 sot363 PUMD3
Contextual Info: DISCRETE SEMICONDUCTORS PUMD3 NPN/PNP resistor-equipped transistors Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors

gy-80

Abstract: tcm1705a
Contextual Info: TEXAS INSTR -CLIN/INTFC3- SS 1>ËÏ ÖTblTSM D033*1ÌS 7 1 ^ 5 5 0 3391^7^ 7 5 ~ ô 7 ~ /5 TCM1705A h INTEGRATED SPEECH CIRCUIT FOR TELEPHONE SET TELECOMMUNICATION CIRCUITS APRIL 1983 N PACKAGE DUAL-IN-LINE PACKAGE TOP VIEW Monolithic replacement for hybrid coil for

marking code FTF

Abstract: x1 marking PUMT1
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PUMT1 PNP general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Preliminary specification PNP general purpose double transistor

FPA016T

Abstract: FPC016-1 I3AV FPB01 DC24V buzzer 5VDC FPA016
Contextual Info: FPA series Numbering 1 FPA XïS-§- 016 T - — t r ~ 1 Tact switch mounting or not Series code % FPA With Tact Switch None or Spot Illuminated with Click I Number of Key kind of Mounting Sheet E p a ijv-h With P rinting Sheet 16+- 016 K A is-W ? 1 FPB 016

115E

Contextual Info: DISCRETE SEMICONDUCTORS BC847BS NPN general purpose double transistor 1999 Apr 28 Product specification Supersedes the data of 1997 Jul 14 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN general purpose double transistor

BYV29

Abstract: bbS3T31
Contextual Info: 2SE D m ^53=131 0D55517 4 BYV29 SERIES N AMER PHILIPS/DISCRETE 7 ^ 0 3 - /7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in p lastic envelopes, fe a tu rin g lo w fo rw a rd voltage drop, u ltra fast reverse recovery tim es w ith ve ry lo w stored charge and soft-recovery