4202 BD TRANSISTOR
Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold
Text: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications
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TGF4230-EEU
TGF4230
TGF4230s
4202 BD TRANSISTOR
4202 BD TRANSISTOR parameter
BV 501
TGF4230-EEU
bond wire gold
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TGF4230-EEU
Abstract: No abstract text available
Text: Product Data Sheet March 20, 2001 Discrete HFET TGF4230-EEU Key Features and Performance • • • • • • 1200 µm x 0.5 µm HFET Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz Suitable for high reliability applications
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TGF4230-EEU
TGF4230-EEU
TGF42
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TGF4230-SCC
Abstract: No abstract text available
Text: Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm 0.024 x 0.029 x
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TGF4230-SCC
TGF4230-SCC
0007-inch
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Abstract: No abstract text available
Text: Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm 0.024 x 0.029 x
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TGF4230-SCC
TGF4230-SCC
0007-inch
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Untitled
Abstract: No abstract text available
Text: Microwave/Millimeter-Wave Products 1.2 mm Discrete HFET Preliminary TGF4230-EEU Features The TGF4230-EEU is readily assembled using automatic equipment. • • • • • • Bond-pad and backside metallization is gold plated for compatibility with eutectic alloy
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TGF4230-EEU
TGF4230-EEU
100mA
TGF4240-EPU
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGF4250
Abstract: r02107 TGF4260 TGF4230 TGF4240 Design Seminar Signal Transmission ab 7614 Au Sn eutectic R0210
Text: APPLICATION NOTES: INTRODUCTION Designing High Efficiency Applifiers using HFETs HFET TriQuint Semiconductor has developed a range of Heterostructure FETs designed for power amplifier applications where high power-added efficiency is a key specification. They also offer the
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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531 amplifier
Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Text: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB
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50-mW
DCS-1800
GA1110E-20
GA1210E-20
531 amplifier
14 Ghz microwave transceiver
power amplifier s band ghz mhz
10 ghz gain block
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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Filtronic
Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15
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FPD3000
FPD2250
FPD1500
FPD1050
FPD750
FPD6836
FPD200
FPD7612
EPA240B
EPA160B
Filtronic
EUDYNA
fpd6836
epa018a
FPD750
ph15 transistor
FLC087XP
FPD3000
FPD7612
FPD1500
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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4202 BD TRANSISTOR
Abstract: Transistor F423
Text: T H I U I N T S E M TGF4230-EEU I C O N D U C T 1.2mm Discrete HFET O R , I N C 4230 # 1200 Mm X 0.5 \im HFET Nominal Pout of 28.5- dBm at 8.5-GHz Nominal Gain of 1 0 .0 -dB at 8.5- GHz # Nominal PAE of 55% at 8 .5 -GHz Suitable for High-Reliability Applications
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TGF4230-EEU
F4230
TGF4230s
4202 BD TRANSISTOR
Transistor F423
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402 rp transistor
Abstract: TGF4230-EPU
Text: TGF4230-EPU, POWER MICROWAVE HFET • 0.5 |am x 1200 |am FET • 28 dBm Output Power at 1-dB Gain Compression at 8.5 GHz • Power Added Efficiency 50% at 8.5GHz • 8.5dB Typical Large Signal Gain at 8.5GHz
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TGF4230-EPU,
TGF4230-EPU
TGF4230-EPU
MS/402
402 rp transistor
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