TGA9070
Abstract: TGA9070-EPU
Text: Advance Product Information TGA9070-EPU 23 GHz to 29 GHz High-Power Amplifier Key Features and Performance Primary Applications • • • • • • LMDS • Point-to-Point Radio 0.25um pHEMT technology 23 GHz to 29 GHz frequency range Nominal Pout of 1 watt 28GHz
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TGA9070-EPU
28GHz)
TGA9070
TGA9070-EPU
400mA
P1d20
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TGA9070
Abstract: TGA9070-SCC
Text: Product Datasheet Not Recommended for New Designs 23 - 29 GHz High Power Amplifier TGA9070-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB
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TGA9070-SCC
28GHz)
TGA9070-SCC
60roper
0007-inch
TGA9070
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TGA9070
Abstract: No abstract text available
Text: Product Datasheet 23 - 29 GHz High Power Amplifier TGA9070-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4.1mm x 3.0mm
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TGA9070-SCC
28GHz)
TGA9070-SCC
0007-inch
TGA9070
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TGA9070
Abstract: TGA9070-SCC
Text: Product Data Sheet 23 - 29 GHz High Power Amplifier TGA9070-SCC Key Features and Performance • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4.1mm x 3.0mm
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TGA9070-SCC
28GHz)
TGA9070-SCC
0007-inch
TGA9070
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TGA9070
Abstract: No abstract text available
Text: Advance Product Information 23 - 29 GHz High Power Amplifier TGA1088-EPU Key Features and Performance • • • • • • • • 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB OTOI 38 dBm typical (Linear Mode)
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TGA1088-EPU
28GHz)
115mm
047mm
TGA188-EPU
100pF
TGA1088
TGA9070
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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10 ghz gain block
Abstract: No abstract text available
Text: Microwave/Millimeter-Wave Products TGA8810-SCC 2 – 10 GHz Gain Block Amplifier, Self-Biased The TriQuint TGA8810-SCC is a self-biased general-purpose amplifier. Two gain stages employ shunt feedback to produce flat gain to 10 GHz. At 1 dB gain compression, output
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TGA8810-SCC
TGA8810-SCC
gold-pla00
TGA9070-EPU
10 ghz gain block
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531 amplifier
Abstract: 14 Ghz microwave transceiver power amplifier s band ghz mhz 10 ghz gain block
Text: Component Selection Guide RF Wireless Communications Products Part Description TQ9114 TQ9121 TQ9122 TQ9132 30 – 500 MHz IF/AGC Amplifier 1.2 – 1.6 GHz Low-Noise Amplifier 500 – 2500 MHz Low-Noise Amplifier 800 – 2500 MHz 50-mW Driver Amplifier Gain dB
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50-mW
DCS-1800
GA1110E-20
GA1210E-20
531 amplifier
14 Ghz microwave transceiver
power amplifier s band ghz mhz
10 ghz gain block
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Text: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection
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Untitled
Abstract: No abstract text available
Text: Product Datasheet 23 - 29 GHz High Power Am plifier TGA9070-SCC Key Features and Performance 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA Chip Dimensions 4.1 mm x 3.0mm Primary Applications
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TGA9070-SCC
28GHz)
TGA9070-SCC
0007-inch
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tico 732
Abstract: 13749 8739 4737
Text: TriQuint f# Advance Product Information SEMICONDUCTOR 23-29 GHz High Power Amplifier Key Features and Performance 0.25um pHEMT Technology TGA9070-EPU Primary Applications • LMDS Nominal Pout of 1 W att 28GHz • Point-to-Point Radio Nominal Gain of 24 dB
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28GHz)
TGA9070-EPU
TGA9070
1246E
1092C
TGA9070-EPU
tico 732
13749
8739
4737
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14141
Abstract: CD005 1160E
Text: TriQuint <+ Advance Product Information SEMiÇONDUC TOR 23 - 29 GHz High Power Amplifier TGA9070-EPU Key Features and Performance 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 W att 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA
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TGA9070-EPU
28GHz)
TGA9070-EPU
0007-inch
14141
CD005
1160E
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sem 5027
Abstract: No abstract text available
Text: TriQuint €► Advance Product Information SEMICONDUCTOR« 23 - 29 GHz High Power Amplifier TGA9070-EPU Key Features and Performance 0.25um pHEMT Technology 23 GHz - 29 GHz Frequency Range Nominal 1 Watt 28GHz @ P1dB Nominal Gain of 23 dB Bias 7V @ 400 mA
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TGA9070-EPU
28GHz)
TGA9070-EPU
0007-inch
sem 5027
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