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    TFK SEMICONDUCTOR Search Results

    TFK SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TFK SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TFK BPW 41 N

    Abstract: IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK
    Text: Vishay Semiconductors Tape and Reel Standards Vishay Semiconductor offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.


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    PDF T-13/4 TFK BPW 41 N IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    TFK diodes

    Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
    Text: VISHAY Vishay Semiconductors Tape and Reel Standards IR Emitters Vishay Semiconductors offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.


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    PDF T-13/4 14-Aug-03 TFK diodes TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83

    TFK 03 diodes

    Abstract: TFK diodes DO214AC DO35 DO41 20 TFK diodes
    Text: VISHAY Vishay Semiconductors Taping of Diodes Axial Lead Components Surface-Mounted Devices SMDs Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 (see figure 1 ). The cathode side is designated by a colored


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    PDF 20-Jan-04 TFK 03 diodes TFK diodes DO214AC DO35 DO41 20 TFK diodes

    TFK 03 diodes

    Abstract: t2 tfk TFK BY 84 TFK diodes 20 TFK diodes DO214AC DO35 DO41 sot23 TR3 SOD80 miniMELF
    Text: VISHAY Vishay Semiconductors Taping of Diodes Axial Lead Components Surface-Mounted Devices SMDs Diodes and rectifiers with axial leads are normally delivered in taped form according to IEC 286-1 (see figure 1 ). The cathode side is designated by a colored


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    PDF DO-35 09-Jan-04 TFK 03 diodes t2 tfk TFK BY 84 TFK diodes 20 TFK diodes DO214AC DO35 DO41 sot23 TR3 SOD80 miniMELF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    1w luxeon 4 led 12v dc

    Abstract: EEEFK1V470P FL10801 BYG22D TFK Automotive connector tfk 223 EVB10801 MLX10801 ELC08D221E Vishay Diode BAS16
    Text: Evaluation board EVB10801 Power LED driver for automotive applications 1. Scope This document describes the design and use of the MLX10801 evaluation board. For a general description about the functionality of the MLX10801 please refer to the MLX10801 data sheet. Please consult the MLX10801 internet


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    PDF EVB10801 MLX10801 QS9000, ISO14001 1w luxeon 4 led 12v dc EEEFK1V470P FL10801 BYG22D TFK Automotive connector tfk 223 EVB10801 ELC08D221E Vishay Diode BAS16

    TFK 027

    Abstract: TFK 848 Accelerometers application circuit f40g MMAS40GWB 30M75-2140
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMAS40GWB/D DATA .- Micromachined Accelerometer +40gAmplified E The MMAS40G family of silicon capacitive, micro–machined accelerometers features integral signal amplification, signal conditioning, a 4–pole low–pass


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    PDF MMAS40GWB/D MMAS40G 30M75-2140 WI-2447 2W609 TFK 027 TFK 848 Accelerometers application circuit f40g MMAS40GWB 30M75-2140

    23 TFK 001

    Abstract: No abstract text available
    Text: MCT6H/ MCT62H Vishay Semiconductors Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.


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    PDF MCT62H MCT62H D-74025 23 TFK 001

    Untitled

    Abstract: No abstract text available
    Text: CNY74–2H/ CNY74–4H Vishay Semiconductors Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead


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    PDF CNY74 CNY74-2H CNY74-4H 16-lead D-74025

    TSML3710-GS08

    Abstract: TEMT3700 TSML3710 diode 178 tfk tfk Phototransistor
    Text: TSML3710 Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage


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    PDF TSML3710 TSML3710 TEMT3700 D-74025 TSML3710-GS08 TEMT3700 diode 178 tfk tfk Phototransistor

    TFK 450

    Abstract: diode 178 tfk IR diodes TFK 4 tfk 540 TFK diodes tfk Phototransistor TEMT3700 TSML3710 TSML3710-GS08
    Text: TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power


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    PDF TSML3710 TSML3710 TEMT3700 D-74025 06-Jun-03 TFK 450 diode 178 tfk IR diodes TFK 4 tfk 540 TFK diodes tfk Phototransistor TSML3710-GS08

    TFK 03 diodes

    Abstract: tfk 605 TFK diodes tfk smd TFK 03 47 TFK 03 catalog telefunken TFK 03 160 2Z SOT23 TFK Label
    Text: T e m ic TELEFUNKEN Semiconductors Tape and Reel Standards TEMIC offers T-l 3 mm and T-l3/4 (5 mm) LEDs pack­ aged on tape. The following specification is based on IEC publication 286, taking into account the industrial re­ quirements for automatic insertion.


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    PDF TEMD2100GS08 TFK 03 diodes tfk 605 TFK diodes tfk smd TFK 03 47 TFK 03 catalog telefunken TFK 03 160 2Z SOT23 TFK Label

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    TFK um 175

    Abstract: TFK Taiwan Semiconductor TFK 175 hal 506
    Text: E TAIWAN SEMICONDUCTOR MBR4035PT - MBR40100PT 40.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS CO M PLIANCE 'VUT.^! «&<•*'■I Features -> M a la l silico n io d ifio r. m a jo rity c a rrie r conduction T 3 . . w:'i !"• ❖ ■ > -v- Low power loss, high efficiency


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    PDF MBR4035PT MBR40100PT O-3P/TO-247AD 260JC/10 TFK um 175 TFK Taiwan Semiconductor TFK 175 hal 506

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    TFK 715

    Abstract: BAW56S
    Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363


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    PDF Q62702-A1253 OT-363 100ns, TFK 715 BAW56S

    TFK E 1024

    Abstract: No abstract text available
    Text: OEC 7 1992 1Meg X 4 Monolithic DRAM molate MDM41000-80/10/12 Issue 3.1 : D ecem ber 1992 S e m ic o n d u c to r inc. Pin Definition Package Type: 1,048,576 X 4 CMOS High Speed Dynamic RAM Features A0 C 2n 3 0 4 q 5 c c r u L A1 7 A2 8 A3 9 Vcc 10 DO Row Access Time of 80,100,120 ns


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    PDF MDM41000-80/10/12 MIL-STD-883 TFK E 1024

    TFK E 1024

    Abstract: TFK 351
    Text: DEC T 1992 4M egx 1 Monolithic DRAM m o l a i e MDM14001-80/10/12 issue 1.2 : December 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP, 20 & 24 Pin VIL


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    PDF MDM14001-80/10/12 MIL-STD-883 TFK E 1024 TFK 351

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    TFK 839

    Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
    Text: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen


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