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    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    Westinghouse Motor protection relay

    Abstract: Westinghouse indicating lights westinghouse power circuit breakers UL1203 westinghouse relay list EBMB series circuit breaker and enclosure westinghouse breaker 800 Westinghouse Motor westinghouse breaker ehd Westinghouse pilot indicating lights
    Text: 3C EBMB Series Circuit Breakers and Enclosures Cl. I, Div. 1 & 2, Groups B, C, D Cl. II, Div. 1, Groups E, F, G Cl. II, Div. 2, Groups F, G Cl. III NEMA 3, 3R, 4‡, 7BCD, 9EFG, 12 Explosionproof Dust-Ignitionproof Raintight Wet Locations Watertight Applications:


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    Westinghouse Motor protection relay

    Abstract: westinghouse breaker UL1203 Square D KAL Breaker westinghouse power circuit breakers SPACE HEATER Cutler-Hammer 225 amp circuit breaker EBMBB-TTTEB32 Westinghouse Cutler-Hammer LD
    Text: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRMAIN06-0366-1 Name: 3C-366 3C 100: DATE: JAN 19 2006 Spectrum EBM TM hinged cover motor control enclosures are used: ɀ For general motor control and circuit protection – indoors and outdoors – in damp, wet, dirty, dusty hazardous locations without


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    PDF SYS19: CRMAIN06-0366-1 3C-366 66008com Westinghouse Motor protection relay westinghouse breaker UL1203 Square D KAL Breaker westinghouse power circuit breakers SPACE HEATER Cutler-Hammer 225 amp circuit breaker EBMBB-TTTEB32 Westinghouse Cutler-Hammer LD

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TFK 106 m44c260

    Abstract: TFK 105 m44c260 FM TRANSMITTER CIRCUIT DIAGRAM M44C260 tfk Lowpass Filter for FM Tfk 2531 TFK 19 001 encoder Tfk 680 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM TFK 1n4148
    Text: Components for RF-Based Remote-Control Systems The U4313B which is mentioned on several positions in this report is not dedicated for new designs. All described applications can use the U4311B in an appropriate way. Transmission Frequencies for RF Systems


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    PDF U4313B U4311B TFK 106 m44c260 TFK 105 m44c260 FM TRANSMITTER CIRCUIT DIAGRAM M44C260 tfk Lowpass Filter for FM Tfk 2531 TFK 19 001 encoder Tfk 680 2.4 ghz FM RECEIVER CIRCUIT DIAGRAM TFK 1n4148

    TFK 408

    Abstract: MARKING rkm TFK 03 diodes 6206 voltage regulator marking AAAE TFK 450 chip D-68623 IXCP10M45A IXCP30M45A RMJ MARKING
    Text: High Voltage Current Regulators V^h = 450/350 V I^EmF = 2 - 100 mA Ω Ravk = 9 - 900 kΩ IXC Series Preliminary Data Sheet The IXYS IXC series of high voltage current regulators consists of nonswitchable, 2-terminal, AC and DC current regulators. AC non-switchable regulators


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    PDF O-220 D-68623 TFK 408 MARKING rkm TFK 03 diodes 6206 voltage regulator marking AAAE TFK 450 chip IXCP10M45A IXCP30M45A RMJ MARKING

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.


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    TFK 450 B2

    Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
    Text: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W


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    42t sot-23

    Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
    Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    PDF BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


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    PDF BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330

    fr 309

    Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
    Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen


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    PDF BC179 fr 309 BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    fagor 2FEP

    Abstract: HVR062 Fagor 1005 fagor fb 5001 DO-201AD fagor 2fbp HVR4-10 fagor B D0G0A44 hvr3
    Text: S7E D FAGOR n w w n • BMSTBES □□□07S1 DMT « F G R S FAfiOR ELECTRONICS Voltage 10.000 V. Current 450 mA • Low cost • Diffused junction • High current capability • The plastic material carries U/L recognition 94 V-0 • Terminals: Axial Leads


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    PDF 34S132S HVR4-10 C2-17 DO-201AD DO-27A DO-201AE fagor 2FEP HVR062 Fagor 1005 fagor fb 5001 fagor 2fbp HVR4-10 fagor B D0G0A44 hvr3

    tfk 731

    Abstract: TFK BPW 41 N 74140 CQY 38 CQY 66 Fotodiode TFK 925 diode tfk diode s .* tfk Scans-0010327
    Text: CQY 38 H 'W GaUliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Metallsockel mit Kunststofflinse • Metal base with plastic lens


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    S-AU4

    Abstract: toshiba rf module
    Text: S-AU4 RF POWER AMPLIFIER MODULE UHF POWER AMPLIFIER MODULE HAM SSB/FM Unit in FEATURES : . Output Power P0á 17W . Minimum Gain Gp=19.2dB . Efficiency ÏT — 35% . 50 0 2— R 2.1±0.2 5 2 .8 15 2T CJ c5 -H -H % Input/Output Impedance n 5 -g fa 5*0115


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    TFK u 116

    Abstract: tl 271 TFK 725 tfk 108 TFK 311 tfk 140 TFK 450 dc/TFK 730
    Text: M ECL M C 350 series UNE DRIVER MC365 L in d r i v e r f o r d r i v i n g l i n e s o f 5 0 o h m s o r g r e a t e r w h ile p r o v id in g th e p o s itiv e logic ' N O R fu n c tio n a n d its c o m p le m e n t s im u lta n e o u s ly . E L E C T R IC A L C H A R A C T E R IS T IC S


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    PDF MC365 50-Ofc* TFK u 116 tl 271 TFK 725 tfk 108 TFK 311 tfk 140 TFK 450 dc/TFK 730

    BF314

    Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
    Text: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität


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    500 DKZ

    Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
    Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt


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    PDF 150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren

    D950

    Abstract: P100 0352002 P100-7
    Text: T H IS DRAWING IS U N P U B L IS H E D . COPYRIGHT BY TYCO FOR RELEASED ALL ELECTRONICS CORPORATION. PU B LIC ATIO N RIGHTS n 6 7 4 5 3 2 - R E S ER V ED . REVISIONS LOG D IS T AD 00 LTR s 1,27 + 0.02 [ 0 5 0 + .001] TYP DATE DWN APVD 220C T2001 MB DS D E S C R IP T IO N


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    PDF 31MAR2000 18SEP00 \ENGapps\TECworker\lobs\nsrv038a\1 D950 P100 0352002 P100-7

    la 7518

    Abstract: TFK 450 BCW60C BCW60D BCW60
    Text: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    PDF BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60