NE552R479A
Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.
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NE552R479A
NE552R479A
mch215f104z
0X00
GSM1900
MCH185A101JK
NE552R479A-T1A-A
433 mhz rf power amplifier module efficiency
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mch215f104zp
Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
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NE552R479A
NE552R479A
100mA
300mA
mch215f104zp
J50 mosfet
ne552r
GSM1900
MCH185A101JK
NE552R479A-T1A
0805CG
433 mhz rf power amplifier module efficiency
9339 blk
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4069 NOT GATE IC
Abstract: NEC LDMOS
Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
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NE5520379A
GSM900
4069 NOT GATE IC
NEC LDMOS
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Untitled
Abstract: No abstract text available
Text: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1
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NE6500379A
IMT-2000,
IMT2000,
24-Hour
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GL 7812
Abstract: ATC 2603 LDMOS NEC
Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:
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NE552R479A
24-Hour
GL 7812
ATC 2603
LDMOS NEC
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Untitled
Abstract: No abstract text available
Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz
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NE6510179A
24-Hour
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DCS1800
Abstract: NE5520279A NE5520279A-T1
Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15
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NE5520279A
0X001
NE5520279A
HS350-P3
DCS1800
NE5520279A-T1
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PDF
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NE6510179A
Abstract: No abstract text available
Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz
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NE6510179A
24-Hour
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100A5R1CP150X
Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
Text: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE651R479A
IMT-2000,
NE651R479A
100A5R1CP150X
IMT-2000
NE651R479A-A
NE651R479A-T1-A
ATC 1084
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PDF
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NE6510179A
Abstract: No abstract text available
Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
24-Hour
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PDF
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MCR03J
Abstract: IMT-2000 NE6510179A NE6510179A-A 100A4R7CP150X AF127 IC 13700 NE6510179AT1A
Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
MCR03J
IMT-2000
NE6510179A
NE6510179A-A
100A4R7CP150X
AF127
IC 13700
NE6510179AT1A
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PDF
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NE6510179A
Abstract: No abstract text available
Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz
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NE6510179A
24-Hour
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PDF
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nec 0882
Abstract: No abstract text available
Text: 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 MAX Source • HIGH LINEAR GAIN: 10 dB TYP Drain Drain
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NE6500379A
24-Hour
nec 0882
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zener diode B3
Abstract: rd 62 nec zener B2 Zener zener series RD zener diode numbering system 2248 IR 845 NEC 2532 n 749 B1 7 zener RD6.8ES-T1-AZ(AB2) general purpose zener diode ro
Text: ZENER DIODE RD [ ] JS, RD [ ] ES, RD [ ] E, RD [ ] F CHARACTERISTICS & RELIABILITY 1. INTRODUCTION NEC introduced products of Zener diodes in RD [ ] Series early in Japan and then increased their product lines from RD [ ] A to RD [ ] D. High reliability performance proved with our Zener diodes has been highly evaluated
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J50 mosfet
Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
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NE5520379A
NE5520379A
J50 mosfet
MCH185A180JK
GSM900
MCH185A4R7CK
NE5520379A-T1A
PT 4962
FET 4016
ldmos nec
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PDF
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NE6510179A
Abstract: NE65 ms 16881
Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
24-Hour
NE65
ms 16881
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nec 0882
Abstract: NEc 79A 8582
Text: 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1
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NE6500379A
IMT-2000,
IMT2000,
24-Hour
nec 0882
NEc 79A
8582
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PDF
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mch215f104zp
Abstract: mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A ATC0603
Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
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NE552R479A
NE552R479A
HS350-P3
mch215f104zp
mch215f104z
J50 mosfet
GSM1900
MCH185A101JK
NE552R479A-T1A
ATC0603
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PDF
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 0882 GRM40X7R104K025BL AF127 100A0R5 case transistor 79A IMT-2000
Text: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1
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NE6500379A
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
nec 0882
GRM40X7R104K025BL
AF127
100A0R5
case transistor 79A
IMT-2000
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PDF
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DCS1800
Abstract: NE5520279A NE5520279A-T1-A
Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V Gate 1.2 MAX.
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NE5520279A
0X001
NE5520279A
DCS1800
NE5520279A-T1-A
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PDF
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4069 NOT GATE IC
Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec
Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
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NE5520379A
NE5520379A
NE5520379A-EVAL
4069 NOT GATE IC
GSM900
MCH185A180JK
MCH185A4R7CK
NE5520379A-T1A
tc 9122
17339
NEC LDMOS
ldmos nec
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser
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OCR Scan
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LG1625AXF
DS99-187HSPL
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PDF
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nec 0882
Abstract: GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A NE6500379A-T1 GRM40-X7R104K025BL TF-100637
Text: 3W, L/S-BAND MEDIUM POWER GaAs MESFET NE6500379A OUTLINE DIMENSIONS FEATURES Units in mm • LOW C OST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @
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OCR Scan
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NE6500379A
NE6500379A
24-Hour
nec 0882
GRM40X7R104K025BL
nec ic 8582
nec d 882 p
100A470CP150X
tajb475*010r
NE6500379A-T1
GRM40-X7R104K025BL
TF-100637
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PDF
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GRM40X7R104K025BL
Abstract: IC 14553 PT 1017 T5.5 murata NE6510179A NE6510179A-T1 ma 17393 atc 11
Text: 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET OUTLINE DIMENSIONS FEATURES_ • LOW COST PLASTIC SURFACE MOUNT PACKAGE NE6510179A NCDO lu 1 Units in mm PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: P o u t = + 31.5 dBm T Y P at V ds = 3.5 V, f = 900 MHz
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OCR Scan
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NE6510179A
24-Hour
GRM40X7R104K025BL
IC 14553
PT 1017
T5.5 murata
NE6510179A
NE6510179A-T1
ma 17393
atc 11
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PDF
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