Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TF 6313 Search Results

    TF 6313 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL6313BCRZ Renesas Electronics Corporation Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications Visit Renesas Electronics Corporation
    ISL6313BCRZ-T Renesas Electronics Corporation Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications Visit Renesas Electronics Corporation
    ISL26313FBZ-T Renesas Electronics Corporation 12-bit, 125kSPS Low-power ADCs with Single-ended and Differential Inputs and Multiple Input Channels Visit Renesas Electronics Corporation
    ISL6313CRZ Renesas Electronics Corporation Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications Visit Renesas Electronics Corporation
    ISL6313BIRZ Renesas Electronics Corporation Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR11 and AMD Applications Visit Renesas Electronics Corporation

    TF 6313 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N2M400

    Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
    Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)


    Original     		PDF KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C

    S1723-04

    Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
    Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of


    Original     		PDF VTD31AA CLD31AA S1723-04 BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K

    lensed

    Abstract: VTT1222W phototransistor visible light VTT1223W VTT1225 VTT1226 VTT1227 VTT3323LA VTT3324LA VTT3325LA
    Text: .025" NPN Phototransistors VTT1222W, 23W Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking,


    Original     		PDF VTT1222W, VTE12xxW VTT7222 VTT7223 VTT7225 lensed VTT1222W phototransistor visible light VTT1223W VTT1225 VTT1226 VTT1227 VTT3323LA VTT3324LA VTT3325LA

    C2E1

    Abstract: N5108 MBM300GS12AW MBN600GS12AW MBM400GR6 mbn1200gr12a 4862G G3E3 Hitachi DSA002734 MBN1200D33A
    Text: Date:Mar.2002 Status List M:Mass production KS02007 A:Abolition GR - A Series Advanced GR Series Absolute Maximum Ratings Connection Single Type Characteristics Outline Status 0.4 N-7 M 1.2 0.35 N-6 M 0.7 1.1 0.3 N-5 M 2.2 0.7 1.1 0.3 M- 9 M 1,250 2.2 0.6


    Original     		PDF MBN1200GR12A MBN600GR12A MBN400GR12A MBM300GR12A MBM200GR12A MBM150GR12A MBM100GR12A KS02007 MBM400GR6 MBM300GR6 C2E1 N5108 MBM300GS12AW MBN600GS12AW 4862G G3E3 Hitachi DSA002734 MBN1200D33A

    VTT9102

    Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
    Text: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted


    Original     		PDF VTT1212, VTE12xx VTT9102 VTT9103 VTT9102 VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    SFH205

    Abstract: BPW34F VTD205 VTD34F SECOND SOURCE
    Text: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light


    Original     		PDF VTD34F BPW34F SFH205 VTD205 VTD34F SECOND SOURCE

    VTT1117

    Abstract: VTT1015 VTT1016 VTT1017 VTT1115 VTT1116 TO46 package VTE10xx
    Text: .050" NPN Phototransistors VTT1015, 16, 17 TO-46 Flat Window Package PACKAGE DIMENSIONS inch mm CASE 1 PRODUCT DESCRIPTION TO-46 (FLAT WINDOW) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The


    Original     		PDF VTT1015, VTE10xx VTT1115 VTT1116 VTT1117 VTT1117 VTT1015 VTT1016 VTT1017 VTT1115 VTT1116 TO46 package

    schematic retro reflective sensor

    Abstract: VTR17D1 VTR16D1 sensor acetone opto-switch dark activated lamp switches high sensitivity reflective phototransistor hydrocarbon sensor Reflective Optical Sensor Opto-23
    Text: Reflective Optoswitch VTR16D1 Arrow Retro with PCB Mount Leads PRODUCT DESCRIPTION This series of reflective optical switches combines an infrared emitting diode IRED with an NPN phototransistor (VTR16D1) in a one piece, sealed, IR transmitting plastic case.


    Original     		PDF VTR16D1 VTR16D1) VTR17xx schematic retro reflective sensor VTR17D1 VTR16D1 sensor acetone opto-switch dark activated lamp switches high sensitivity reflective phototransistor hydrocarbon sensor Reflective Optical Sensor Opto-23

    opto-switch

    Abstract: optoswitch VTL13D7-20 vtl23 phototransistor visible light VTL11D1 VTL11D1-20 VTL11D3 VTL11D3-20 VTL11D5-20
    Text: Transmissive Optoswitch VTL11D1 - D7 Slotted Switch — 0.395 High PRODUCT DESCRIPTION This series of interrupter type transmissive optoswitches combines an infrared emitting diode IRED with an NPN phototransistor in a one piece, sealed, IR transmitting plastic


    Original     		PDF VTL11D1 VTL13 VTL23D3A00 VTL23D1A22 opto-switch optoswitch VTL13D7-20 vtl23 phototransistor visible light VTL11D1-20 VTL11D3 VTL11D3-20 VTL11D5-20

    2SK2911

    Abstract: No abstract text available
    Text: Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A 0.4 0.16 0 to 0.1 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5


    Original     		PDF ENN6313 2SK2911 2SK2911] 2SK2911

    2SK2911

    Abstract: TA-2137 63131
    Text: Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A 0.4 0.16 0 to 0.1 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5


    Original     		PDF ENN6313 2SK2911 2SK2911] 2SK2911 TA-2137 63131

    4558 opamp

    Abstract: 4558 dd 4558 lowpass filter portable dvd player block diagram TDA1311 portable dvd player power supply 4558 dd data portable dvd player f 4558 sunplus* DVD
    Text: MS6313 MOSA ELECTRONICS Stereo Audio DAC FEATURES • Excellent Power Supply Rejection Ratio PSRR •Easy application : • • • • • • • Voltage Output Space saving package(SOP8) Low power consumption Low total harmonic distortion Wide dynamic range(16-bit resolution)


    Original     		PDF MS6313 16-bit MS6313 MS6313AS 4558 opamp 4558 dd 4558 lowpass filter portable dvd player block diagram TDA1311 portable dvd player power supply 4558 dd data portable dvd player f 4558 sunplus* DVD

    S1723-04

    Abstract: VTH2090
    Text: Alternate Source/ Second Source Photodiodes VTH2090 S1723-04 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION CASE 53 BLACK CERAMIC CHIP ACTIVE AREA: .131 in2 (84.64 mm2) SPECTRAL RESPONSE This PIN photodiode consists of a chip with a 9.2 x 9.2


    Original     		PDF VTH2090 S1723-04 VTH2090

    VTD205K

    Abstract: to-92 type MO-63132 pt 100 to92 SFH205K
    Text: VTD205K Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,


    Original     		PDF VTD205K SFH205K VTD205K to-92 type MO-63132 pt 100 to92

    S1723-04

    Abstract: VTH2090 S1723 TF65
    Text: Alternate Source/ Second Source Photodiodes VTH2090 S1723-04 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION CASE 53 BLACK CERAMIC CHIP ACTIVE AREA: .131 in2 (84.64 mm2) SPECTRAL RESPONSE This PIN photodiode consists of a chip with a 9.2 x 9.2


    Original     		PDF VTH2090 S1723-04 VTH2090 S1723 TF65

    SFH205

    Abstract: VTD205 photodiode 011
    Text: Alternate Source/ Second Source Photodiodes VTD205 SFH205 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy


    Original     		PDF VTD205 SFH205 VTD205 photodiode 011

    Untitled

    Abstract: No abstract text available
    Text: Alternate Source/ Second Source Photodiodes VTD34 BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded


    Original     		PDF VTD34 BPW34

    VTT1212

    Abstract: VTT1214
    Text: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted


    Original     		PDF VTT1212, VTE12xx VTT1212 VTT1214 VTT1212 VTT1214

    SFH206

    Abstract: VTD206
    Text: Alternate Source/ Second Source Photodiodes VTD206 SFH206 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 61 TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode in a cast epoxy


    Original     		PDF VTD206 SFH206 VTD206

    high sensitivity reflective phototransistor

    Abstract: photoswitch npn RPS1C Vactec VTR17
    Text: RPS1-C JL e B rB RETRO PHOTO-SWITCH vac tec VTR16 VTR17 VTRI/c 0-8.0mm SENSING OPTOELECTRONICS SEALED CASE LED-PHOTOTRANSISTOR 10900 PAGE BI3/D. ST. LOUIS, MO. 63132 USA PHONE 314-423-4900 TWX 910-764-0811 P R O D U C T D E S C R IP T IO N FEATURES • Sealed case—no dust problems due to


    OCR Scan     		PDF VTR16 VTR17 high sensitivity reflective phototransistor photoswitch npn RPS1C Vactec VTR17

    Untitled

    Abstract: No abstract text available
    Text: LED-1 B HIGH POWER GaAs INFRARED EMITTING DIODES 920 nm il OPTOELECTRONICS 1 0 900 PAGE BLVD. ST. LOUIS, M O . 63132 USA PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 FEATURES: PRODUCT DESCRIPTION: • Eight standard packages in This series of Infrared emitting diodes {IREDs consists of


    OCR Scan     		PDF 10pps.

    VTT9012

    Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
    Text: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900


    OCR Scan     		PDF 82M63 VTT9012 VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52

    Untitled

    Abstract: No abstract text available
    Text: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker,


    OCR Scan     		PDF VTD206K SFH206K 3030fci01