PFC design
Abstract: No abstract text available
Text: Reference Design for IPM Modules Evaluation Board for P95X-A45 TF IPM Modules roprietary data, company confidential. All rights reserved. Reference Design for IPM Modules RD_2015-06_001-v02 page 1 Table of Contents 1 Introduction . 4
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P95X-A45
001-v02
ICE1PCS01
ICE2PCS01
78M05
6231CS8
PFC design
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Untitled
Abstract: No abstract text available
Text: MG200Q1US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.5//s M ax. : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case.
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MG200Q1US41
2-109A4A
Temp00
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2sc4596
Abstract: No abstract text available
Text: 2SC4596 Transistor, NPN Features Dimensions Units : mm • available in T0-220FP (SC-67) package • high speed switching: tf < 1.0 jas at lc = 0.3 A 2SC4596 (TO-22QFP) 7.0 • low collector saturation voltage, typically V CE(sa« < 0.3 V at lc/lB = 3 A/0.15 A
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2SC4596
T0-220FP
SC-67)
2SA1757
O-22QFP)
2SC4596
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2SC5103
Abstract: 2SC5103F5
Text: 2SC5103F5 h 7 > s 7 > $ / Transistors 2S C 5103F5 NPN b 7 > V *$ Epitaxial Planar NPN Silicon Transistor "J y^/High Switching Speed • ^ "iS @ /D im en sio n s U nit: mm • # * tf=0.1 us (Typ.) (lc=3A ) 2) VcE(sat)=.0.15V (Typ.) (IC/lB=3A/0.15A) 3) SOA
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2SC5103F5
SC-63
2SC5103
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OKI g3 gs lead free
Abstract: No abstract text available
Text: 31E P COP888CF NATL S E M I C O N D CUP/UCJ b S O l l S Ö 0 0 b ? 7 0 ci 1 National PRELIMINARY Semiconductor T - tf- tfo Z COP888CF Single-Chip microCMOS Microcontroller i Two 16-bit timers, each with two 16-bit registers sup porting: — Processor Independent PWM mode
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COP888CF
COP888
COP888CF
16-bit
TL/DO/9425-27
OKI g3 gs lead free
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Untitled
Abstract: No abstract text available
Text: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.
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HYM532256A
32-bit
HY534256A
22/tF
HYM532256AM/ALM
HYM532256AMG/ALMG
4b75oaa
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BCR16DM-12
Abstract: BCR16DM BCR16DM-8 BCR16CM BCR16CM-10 BCR16CM-12 BCR16CM-4 BCR16CM-6 BCR16CM-8 BCR16DM-10
Text: 184 — — = C tf'7 3 > • •/ f £#■'#] 10, 1 2 ? 7 x c i S & t £ T O * - M , K ttiil it ifl'J I drm Vtm t BCR16CM-4 BCR16CM-6 BCR16CM-8 BCR16CM-10 BCR16CM-12 Vdsm 300 400 600 700 800 Vdrm 200 300 400 500 600 16 i r<-=ioo°c, Afflisi ¿S ì» In rm s)
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BCR16CM
125-C.
BCR16CM-4
BCR16CM-6
BCR16CM-8
BCR16CM-10
BCR16CM-12
H-101
BCR16DM-12
BCR16DM
BCR16DM-8
BCR16CM-12
BCR16DM-10
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FSM30C6
Abstract: FSM30C FSM30c2 FSM30C4 H-17 H-18
Text: - 174 - a FSM30C oT0-3fiJl^-77v o77XhyfktWik 07= 7- y 3>-f y7'fëiE OÜLtS^Ä File No. E809771 •*5Ë*S ¡¿ FSM30C2 ($7—V-2.PÆ , AC1500V I'/m T„=25°C' RMS avi Igm di/dl T, Tsig 200 30(Tf=63°C) 275(50Hz, 300(/=2~10m s) 10 0.5 10 3 20[Vd— %V’drm)
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FSM30C
E80977)
FSM30C2
FSM30C4
FSM30C6
H-101
FSM30C6
H-17
H-18
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Untitled
Abstract: No abstract text available
Text: HITACHI/ MCU/MPU 4 4 cîtaSQl4 0 0 2 3 4 0 4 SbE 0 S • T-H-tf-öV H8/330 HD6473308, HD6433308 HARDWARE MANUAL #H04 H I T A C H ' S I " M21T005 HITACHI/ (MCU/nPU) 2bE Q ■ 4 41 ta2D 4 G Q 2 3 4 D S 7 ■ T-49-19-06 When using this document, keep the following in mind:
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H8/330
HD6473308,
HD6433308
M21T005
T-49-19-06
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EVK75-050
Abstract: EVG31-050 EVK31-050 TAE 1102 2DI300A-050 H-17 H-18 H17133
Text: 246 — I — N P N , iq g m v s m o Z Ë Î. S V ebo c > « > VcBO m ^ I CP (A (A ) AC, 15m > B I f (A ) (A ) T , tf Pc (a i) (W ) Total (W ) V i., (i£ 2 ) CC) CC) (V ) CBO (m A ) ft * Œ 3. # fcUtèVcio m ft EBO V cB (V ) (m A ) Ä (ic Ä m A ) ft
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EVG31-050
EVK31-0
H-101
EVK75-050
EVK31-050
TAE 1102
2DI300A-050
H-17
H-18
H17133
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2SC5103
Abstract: No abstract text available
Text: 2SC5103F5 b y > v7> £ /Transistors I 2 S C 5 1 3 F 5 7 h - f \ s - N P N V U □ > h 7> Epitaxial Planar NPN Silicon Transistor ¡ Ü *f v f -> ?"/High Switching Speed £t- \f'&0/Dinriensions Unit : mm 1)x-r 7 tf=0.1 MS (Typ.) (lc= 3 A ) 2) □ U '7 i î ê â f a S Œ * i ® l ' „
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2SC5103F5
2SC5103F5
2SC5103
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NT 101
Abstract: 1N3064 1N916 AM29825 SN74ALS29825 SN74ALS29826
Text: Tf SN74ALS29825. SN74ALS29826 8 BIT BUS INTERFACE FLIP FLOPS WITH 3-STATE OUTPUTS D 2 8 2 9 , J A N U A R Y 1 9 8 6 - REVISED M A R C H 1 9 8 8 • S N 7 4 A L S 2 9 8 2 5 . . . DW OR NT PACKAGE Functionally Equivalent to A M D A M 2 9 8 2 5 and A M 2 9 8 2 6
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SN74ALS29825.
SN74ALS29826
d2829,
1986-revised
AM29825
AM29826
300-mil
NT 101
1N3064
1N916
SN74ALS29825
SN74ALS29826
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H-17
Abstract: H-18 H-19
Text: - 1 2 7 - m H I I 9 2 A TO -9 2 DTAI o m h ty W ä , 1A TO-92 n S ltttttt ( Tu—25°C) itti sii 7? DTA1C DTA1E 200 400 h i RMS) l 2’ t V 1.0 ( Tf=74°C) 8 (50Hz, ¡TSM 1 P gm 1 (/S50Hz, d u ty á l0 % ) V gm 6 I gt Min fr II -40-125 1.5 V 2 2 IV 2 Vb =12V
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-127-H
110-C,
-10ms)
/S50Hz,
dutyS10%
O-206
H-101
H-17
H-18
H-19
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2DI75S-050A
Abstract: EVM31-050 EVL31-050 ic LM 356 EVL31-055 equivalent EVM31-050A 2DI200A-020 EVK71-050 EVK71-055 EVL31-055
Text: 240 - h =, N P N . y - 'j > h > • 7 y -U > h > tm , 2 W rt3P • Ü W im ñ w . y - í í - » m i S « * » ! » ! O lili: C tfê W ü tE T SU D 1 ~ ~ °C lJ j t FR_ x E tü I RBE2 I O E2 SUD v i: 9 ft V CBO m i VCEO (SUS) VEBO X 1c z 2 D I 7 5 S - 0
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H-101
2DI75S-050A
EVM31-050
EVL31-050
ic LM 356
EVL31-055 equivalent
EVM31-050A
2DI200A-020
EVK71-050
EVK71-055
EVL31-055
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BB105
Abstract: BB105A bb105g WARIKAP diody SOD-23 PD2824 ce37 ma373 BB105A/B
Text: WARIKAP ¥ BB105A, BB105G SWW 1156-151 D iody k rz em o w e e p ip la n a rn e o z m ien n ej pojem n o sci p rz ez n ac zo n e do p ra c y w u k la d z ie glow icy U H F w o d b io rn ik a c h tele w iz y jn y c h i rad io w y ch . 1 3 tf m a x 0,5 max2,5
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BB105A,
BB105G
BB105G
BB105
BB105A
WARIKAP
diody
SOD-23
PD2824
ce37
ma373
BB105A/B
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Untitled
Abstract: No abstract text available
Text: WIRE-WRAP WIRES TYPE AET, WET, WE xxxx SPC or SPCA -90°C / +200°C SPECIFICATIONS Conductor : ASTM-B-224 Insulation : ASTM-D-4895 Insulated wire : NF-C-93522 PTFE 250 / 350 / 600 Volts AC ASTM-B-298 ASTM-B-624 MIL-W-16878 PRIMARY WIRE Standard colours See page III
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ASTM-B-224
ASTM-D-4895
NF-C-93522
ASTM-B-298
ASTM-B-624
MIL-W-16878
/100m)
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tf 298
Abstract: E6327 Q67000-S200
Text: SIPMOS Small-Signal Transistor BSP 298 ● VDS 400 V ● ID 0.5 A ● RDS on 3.0 Ω ● N channel ● Enhancement mode ● Avalanche rated Type Ordering Code Tape and Reel Information BSP 298 Q67000-S200 Pin Configuration E6327: 1000 pcs/reel 1 2 3 4
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Q67000-S200
E6327:
OT-223
tf 298
E6327
Q67000-S200
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HD74HC1GU04
Abstract: Hitachi DSA00160
Text: HD74HC1GU04 Unbuffered Inverter ADE-205-298A Z 2nd. Edition December 1999 Description The HD74HC1GU04 is high speed CMOS unbuffered inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series.
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HD74HC1GU04
ADE-205-298A
HD74HC1GU04
Hitachi DSA00160
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Hitachi DSA0076
Abstract: HD74HC1GU04
Text: HD74HC1GU04 Unbuffered Inverter ADE-205-298B Z 3rd. Edition April 2001 Description The HD74HC1GU04 is high speed CMOS unbuffered inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high speed equivalent to LS–TTL series.
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HD74HC1GU04
ADE-205-298B
HD74HC1GU04
Hitachi DSA0076
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HD74HC1GU04
Abstract: HD74HC1GU04CME
Text: HD74HC1GU04 Unbuffered Inverter REJ03D0190–0500Z Previous ADE-205-298C (Z Rev.5.00 Jan.27.2004 Description The HD74HC1GU04 is high-speed CMOS unbuffered inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series.
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HD74HC1GU04
REJ03D0190
0500Z
ADE-205-298C
HD74HC1GU04
HD74HC1GU04CME
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Untitled
Abstract: No abstract text available
Text: r DO NOT SCALE K « "29843S3 *J| >« Ï T H I S D R A W IN G f A N D 'D E S IG N & S T IT U T E 5 A‘ P R O P R I E T A R Y vD> S .P A C K A R D IE L E C T R .IC 'D I V IS IO N ' TO B E D U P L IC A T E D ’ O R R E P R O D U C E D O U T A U T H O R IT Y O F P A C K A R D E L E C T R I C - * »
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4732C
Z38435S-Q
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6ba1
Abstract: ba8u
Text: SN54ALS29863, SN54ALS29864 SN74ALS29863, SN74ALS29864 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS PRODUCT PREVIEW D2915, JANUARY 1986 • Functionally Equivalent to A M 29863 and A M 29864 • Choice of True or Inverting Logic • Power-Up High-lmpedance State
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SN54ALS29863,
SN54ALS29864
SN74ALS29863,
SN74ALS29864
D2915,
SN54ALS'
SN74ALS'
6ba1
ba8u
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display led 7 seg
Abstract: HCT138 KS0066 LS138 704-02 214-3301 214-3424 214-3430 214-3468 214-3474
Text: Data Pack F Issued July 1998 298-4607 Powertip alphanumeric dot matrix liquid crystal displays Data Sheet Reflective types - RS stock numbers 214-3238, 214-3244, 214-3250, 214-3266, 214-3272, 214-3288, 214-3294, 214-3301, 214-3317, 214-3323, 214-3339, 214-3345, 214-3351, 294-8667, 294-8689,
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UPS sinus circuit
Abstract: sine wave ups design SEMiX503GB126HDS 80C327
Text: SEMiX503GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 466 A Tc = 80°C 327 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 431 A Tc = 80°C 298 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules
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SEMiX503GB126HDs
B100/125
R100exp
B100/125
1/T-1/T100)
UPS sinus circuit
sine wave ups design
SEMiX503GB126HDS
80C327
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