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    TF 10N60 Search Results

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    TF 10N60 Price and Stock

    STMicroelectronics STF10N60DM2

    MOSFET N-CH 600V 8A TO220FP
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    DigiKey STF10N60DM2 Tube 1,890 1
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    Avnet Americas STF10N60DM2 Bulk 16 Weeks 2,000
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    Mouser Electronics STF10N60DM2 1,967
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    Newark STF10N60DM2 Bulk 1,000
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    STMicroelectronics STF10N60DM2 1,957 1
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    Bristol Electronics STF10N60DM2 1,000
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    TME STF10N60DM2 1
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    Avnet Silica STF10N60DM2 2,000 17 Weeks 50
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    EBV Elektronik STF10N60DM2 2,900 17 Weeks 50
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    STMicroelectronics STF10N60M2

    MOSFET N-CH 600V 7.5A TO220FP
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    DigiKey STF10N60M2 Tube 477 1
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    Avnet Americas STF10N60M2 Bulk 14 Weeks, 4 Days 1
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    STF10N60M2 Tube 14 Weeks 2,000
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    Mouser Electronics STF10N60M2 2,946
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    Newark STF10N60M2 Bulk 63 1
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    STMicroelectronics STF10N60M2 2,946 1
    • 1 $1.51
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    Bristol Electronics STF10N60M2 1,900
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    TME STF10N60M2 1
    • 1 $1.34
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    Avnet Silica STF10N60M2 2,000 15 Weeks 50
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    Chip One Stop STF10N60M2 Tube 2,835 0 Weeks, 1 Days 1
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    EBV Elektronik STF10N60M2 15 Weeks 50
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    Alpha & Omega Semiconductor AOTF10N60

    MOSFET N-CH 600V 10A TO220-3F
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    DigiKey AOTF10N60 Tube 1,000
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    TME AOTF10N60 663 1
    • 1 $1.19
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    Alpha & Omega Semiconductor AOTF10N60L

    MOSFET N-CH 600V 10A TO220-3F
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    Alpha & Omega Semiconductor AOTF10N60CL

    N
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    DigiKey AOTF10N60CL Reel 1,000
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    Find more TF 10N60 price and stock on Findchips.com

    TF 10N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60Z-Q 10N60Z-Q 10N60ZL-TF1-T 10N60ZG-TF1-T QW-R502-B05 PDF

    10N60K

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		10N60K 10N60K O-220F QW-R502-743 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		10N60K 10N60K O-220F O-220F1 QW-R502-743 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60Z 10N60Z QW-R502-936 PDF

    10N60G

    Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l PDF

    tf 10n60

    Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60 10N60 QW-R502-119 tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet PDF

    10N60G TO-220F

    Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		10N60 10N60 QW-R502-119 10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l PDF

    10N60L

    Abstract: 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60L 10N60G PDF

    mosfet 10a 600v

    Abstract: MOSFET 10n60 10N60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 O-220 O-220F O-220F1 QW-R502-119 mosfet 10a 600v MOSFET 10n60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l PDF

    UTC10N60

    Abstract: 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 UTC10N60 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L PDF

    UTC10N60

    Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 10N60 QW-R502-119 UTC10N60 utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10N60G-TQ2-T 10N60L-TQ2-T PDF

    10N60G TO-220F

    Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60G TO-220F MOSFET 10n60 utc 10n60l TO-220-F2 10N60G PDF

    IXTP10N60PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		10N60PM O-220 405B2 IXTP10N60PM PDF

    10N60PM

    Abstract: IXTP10N60PM
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		10N60PM O-220 405B2 10N60PM IXTP10N60PM PDF

    MOSFET IXYS TO-263

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		10N60P 10N60P O-220 O-263 405B2 MOSFET IXYS TO-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		10N60P 10N60P O-263 O-220 405B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		10N60C5M O-220 20090209d PDF

    10N60C

    Abstract: GS54
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		10N60C5M O-220 20070704a9 10N60C GS54 PDF

    10N60C

    Abstract: c16tj 10N60C5M
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M PDF

    10N60C5M

    Abstract: kw0649 IGBT GS c16tj 10N60C
    Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions


    Original     		10N60C5M O-220 10N60C5M kw0649 IGBT GS c16tj 10N60C PDF

    10N60C

    Abstract: C3525
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		10N60C5M O-220 10N60C C3525 PDF

    10N60C

    Abstract: 10N60C5M
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		10N60C5M O-220 20090209d 10N60C 10N60C5M PDF