b 1492
Abstract: ISL7124SRH K500 LM124 cross reference lm124
Text: Single Event Effects Testing of the ISL7124SRH Quad Operational Amplifier June 2002 Purpose - This report describes the results of single event effects testing of the ISL7124SRH quad operational amplifier ‘op amp’ to determine whether this part meets
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ISL7124SRH
36MeVmg/cm2
LM124
ISL7124
b 1492
K500
LM124
cross reference lm124
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diode u1d
Abstract: "Pushbutton Switch" u1d diode MAX6816 "Pushbutton Switch" datasheet 4626 APP4626 MAX4403 MAX4403B AN4626
Text: Maxim > App Notes > Amplifier and Comparator Circuits Microprocessor Supervisor Circuits Keywords: IC testing, quad op amps, switch debouncers, pulse generators, serial programming Oct 21, 2009 APPLICATION NOTE 4626 Multiple-Pulse Generator Aids IC Testing
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MAX4403:
MAX6816:
com/an4626
AN4626,
APP4626,
Appnote4626,
diode u1d
"Pushbutton Switch"
u1d diode
MAX6816
"Pushbutton Switch" datasheet
4626
APP4626
MAX4403
MAX4403B
AN4626
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NORPS-12 LDR
Abstract: No abstract text available
Text: Application Note 1949 Total Dose Testing of the ISL70419SEH Radiation Hardened Quad Operational Amplifier Introduction This document reports the results of low and high dose rate total dose testing of the ISL70419SEH quad operational amplifier. The tests were conducted to provide an assessment
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ISL70419SEH
168-hour
AN1949
NORPS-12 LDR
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US18650G3
Abstract: us18650* specifications SONY us18650* specifications US18650 CCCV Charger Circuit 4.2V SONY BATTERIES PRODUCTS SAFETY PRODUCT us18650* chargers APP4322 MAX1737 MAX4163
Text: Maxim > App Notes > Amplifier and comparator circuits Battery management Power-supply circuits Keywords: Battery Emulator, simulated load, lithium-ion, li-ion, LI+, load testing, charger, fast charge Dec 10, 2008 APPLICATION NOTE 4322 Simplified lithium-ion Li+ battery-charger testing
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char08
MAX8515
com/an4322
AN4322,
APP4322,
Appnote4322,
US18650G3
us18650* specifications
SONY us18650* specifications
US18650
CCCV Charger Circuit 4.2V
SONY BATTERIES PRODUCTS SAFETY PRODUCT
us18650* chargers
APP4322
MAX1737
MAX4163
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us18650
Abstract: us18650* specifications US18650G3 battery charger 4,2v SONY BATTERIES PRODUCTS SAFETY PRODUCT us1865 charger APP4322 MAX1737 MAX4163
Text: Maxim > App Notes > Amplifier and Comparator Circuits Battery Management Power-Supply Circuits Keywords: Battery Emulator, simulated load, lithium-ion, li-ion, LI+, load testing, charger, fast charge Dec 10, 2008 APPLICATION NOTE 4322 Simplified Lithium-Ion Li+ Battery-Charger Testing
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com/an4322
MAX8515:
AN4322,
APP4322,
Appnote4322,
us18650
us18650* specifications
US18650G3
battery charger 4,2v
SONY BATTERIES PRODUCTS SAFETY PRODUCT
us1865
charger
APP4322
MAX1737
MAX4163
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specification of ldr
Abstract: LDR SPECIFICATION LDR voltage range
Text: Application Note 1870 Author: Nick van Vonno Total Dose Testing of the ISL70444SEH Radiation Hardened Quad Operational Amplifier Introduction and Executive Summary This document reports the results of low and high dose rate total dose testing of the ISL70444SEH quad operational
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ISL70444SEH
MIL-STD-883
AN1870
specification of ldr
LDR SPECIFICATION
LDR voltage range
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Untitled
Abstract: No abstract text available
Text: Application Note 1792 Author: Nick van Vonno Total Dose Testing of the ISL70417SEH Radiation Hardened Quad Operational Amplifier Introduction Part Description This document reports the results of low and high dose rate total dose testing of the ISL70417SEH quad operational
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ISL70417SEH
300krad
300rad
50krad
01rad
AN1792
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Keithley
Abstract: No abstract text available
Text: Number 2251 Application Note Series Testing RF Power Amplifiers with the Model 2306 Battery/Charger Simulator’s Pulse Current Step Function Introduction Typically, production testing of DC RF power amplifiers involves measuring RF power output and drive current consumption. During testing, the power amplifier is programmed to output a series of RF power levels, then load current measurements
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NL-4200
08005KDCI
Keithley
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M 9718
Abstract: OFDM USING FFT IFFT METHODS IFFT AN9718 HI5905 PAR/PDS3S140 PAR/DMG9N65CT PAR/AP13005 PAR/DF06S PAR/SF30JG-B
Text: Harris Semiconductor No. AN9718 Harris Telecom April 1997 Analog Amplifier Linearity Characterization via Probability Weighted Multitone Power Ratio Testing HI5905 Authors: Richard Roberts, Rodney Nelson Abstract 2.0 The DMT Waveform This application note discusses methodology for testing analog amplifiers designed to process DMT (discrete multitone)
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AN9718
HI5905)
1-800-4-HARRIS
M 9718
OFDM USING FFT IFFT METHODS
IFFT
AN9718
HI5905
PAR/PDS3S140
PAR/DMG9N65CT
PAR/AP13005
PAR/DF06S
PAR/SF30JG-B
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IN4007
Abstract: IN4007 DATASHEET OPA660 IN4007 diode diode IN4007 description ordering information of IN4007 IN4007 maximum input voltage 14VPP IN4007 ordering information Diodes In4007
Text: DEM-OPA660-2GC EVALUATION FIXTURE FEATURES DESCRIPTION ● EASY AND FAST PERFORMANCE TESTING The Demo Fixture DEM-OPA660-2GC allows easy and fast performance testing of the OPA660AP in the current-feedback operational amplifier configuration. Figure 1 shows the diagram of the test fixture and
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DEM-OPA660-2GC
DEM-OPA660-2GC
OPA660AP
DEM-OPA660-2GC.
IN4007
IN4007 DATASHEET
OPA660
IN4007 diode
diode IN4007 description
ordering information of IN4007
IN4007 maximum input voltage
14VPP
IN4007 ordering information
Diodes In4007
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Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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XP1014-BD
XP1006
MIL-STD-883
01-Sep-10
XP1014
I0005129
Chip Advanced Tech
XP1006 bonding
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P1006BD
Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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11-Nov-08
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
P1006BD
XP1006-BD
GAAS FET AMPLIFIER x-band 10w
Mimix Asia
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tanaka gold wire
Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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13-Mar-06
P1006
MIL-STD-883
XP1006
tanaka gold wire
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006
XP1006 bonding
X-band GaAs pHEMT MMIC Chip
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sspa 14 ghz
Abstract: SSPA C Band 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier
Text: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA-0.8-3.2-10 was designed to be used as a laboratory amplifier for all medium power testing needs from 800 MHz to 3.2 GHz. This SSPA can also be used in any application where
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Untitled
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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01-Nov-06
P1006
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-000W
XP1006-BD-EV1
XP1006
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P1014
Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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P1014-BD
03-Aug-07
XP1006
MIL-STD-883
XP1014
I0005129
XP1014-BD-000V
XP1014-BD-EV1
XP1014
P1014
DM6030HK
TS3332LD
XP1014-BD-000V
XP1006 bonding
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Untitled
Abstract: No abstract text available
Text: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA-0.6-2.0-20 was designed to be used as a laboratory amplifier for all medium power testing needs from 600 MHz to 2.0 GHz. This SSPA can also be used in any application where
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xp1014
Abstract: P1014-BD
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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14-Nov-08
P1014-BD
XP1014
I0005129
XP1006
MIL-STD-883
XP1014-BD-000V
XP1014-BD-EV1
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PDF
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GAAS FET AMPLIFIER x-band 10w
Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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03-Aug-07
P1006-BD
MIL-STD-883
XP1006
XP1006-BD-000V
XP1006-BD-EV1
XP1006
GAAS FET AMPLIFIER x-band 10w
XP1006-BD
XP1006-BD-EV1
P1006BD
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006-BD-000V
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IN4007
Abstract: IN4007 DATASHEET IN4007 diode ordering information of IN4007 diode IN4007 description IN4007 maximum input voltage power supply IN4007 IN4007 ordering information diode IN4007 Diodes In4007
Text: DEM-OPA660-3GC EVALUATION FIXTURE FEATURES DESCRIPTION ● EASY AND FAST PERFORMANCE TESTING The Demo Fixture DEM-OPA660-3GC allows easy and fast performance testing of the OPA660AP building blocks OTA and buffer stage in the direct-feedback amplifier configuration. Figure 1 shows the diagram of the test fixture, while Figure 2 illustrates the
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DEM-OPA660-3GC
DEM-OPA660-3GC
OPA660AP
OPA660
OPA660-3GC
IN4007
IN4007 DATASHEET
IN4007 diode
ordering information of IN4007
diode IN4007 description
IN4007 maximum input voltage
power supply IN4007
IN4007 ordering information
diode IN4007
Diodes In4007
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AA028P2-99
Abstract: No abstract text available
Text: 25–31 GHz Amplifier AA028P2-99 Features • 15 dB Gain ■ +16 dBm Output Power ■ Rugged, Reliable Package ■ Single Voltage Operation ■ 100% RF and DC Testing Description The AA028P2-99 is a broadband millimeterwave amplifier in a rugged package. The amplifier is designed for use in
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AA028P2-99
AA028P2-99
2/00A
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"15 GHz" power amplifier 10 watt
Abstract: No abstract text available
Text: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA 0.8-4.5-5.0 was designed to • 800 MHz to 4.5 GHz bandwidth be used as a laboratory amplifier for all medium • Low cost power testing needs from 800 MHz to 4.5 GHz. This
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SSPA
Abstract: sspa 14 ghz
Text: Solid State Power Amplifier Medium Power, Broadband Solid State RF Amplifier Aethercomm P/N SSPA-0.8-4.5-5.0 was designed to • 800 MHz to 4.5 GHz Bandwidth be used as a laboratory amplifier for all medium • Low Cost power testing needs from 800 MHz to 4.5 GHz. This
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XP1007
Abstract: power transistor mimix x-band x-band power transistor power transistor gaas x-band
Text: 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Features Chip Device Layout X-Band 10W Power Amplifier 18.0 dB Small Signal Gain +40.0 dBm Saturated Output Power 32% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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05-May-05
P1007
MIL-STD-883
XP1007
power transistor mimix x-band
x-band power transistor
power transistor gaas x-band
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