PF5102
Abstract: KC105 Tekelec TE 10 75 a2cb -20/Tekelec TE 10 75
Text: Cb ~ 0.10 pF A 22 e 24.5min 4-2±a2 _ 10 1.9*°-2 a0.38*003 Cb ~ 0.10 pF B H 15 0.05/0.10 Cb ~ 0.20 pF B H 28 Cb~ 0,20 pF B H 32 0 3.1 ± 0.1 05.84 102 CNI -H hCO t 04.0 2.04 *0-07 5 ± 0 .1 74 0 4.06 101 C b ~ 0.14 pF C ~ 0.25 pF 0 1 .5710.05 01.8 j- .— w
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Untitled
Abstract: No abstract text available
Text: TEKELEC COMPONENTS bôE T> WM T Q 0 3 7 Û 7 DDGG141 7TS • DOUBLE BALANCED MIXERS Package Type Model n‘ BMH 158 Relay H eader F 56 677 Frequency ran ge RF LO 1 - 750 MHz IF DC - 750 MHz LO Level 7 dBm Tem perature ran ge - 5 5 / 100‘ C min max units
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TQ037
DDGG141
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DH493
Abstract: 40144 DH-493 EH40144 DH40144
Text: PIN DIODES The ta b le b e lo w presents a single set o f values fro m th e v a rie ty o f c u s to m e r o p tio n s a v a ila b le fo r this series o f pa ssiva te d PIN diodes. TEKELEC MICROWAVE uses its p ro p rie ta ry te c h n o lo g y , w h ic h enab le s
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274 transistor
Abstract: transistor c 5855
Text: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and
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OT440A
PTB23006U
Erie1250-003
GA244
274 transistor
transistor c 5855
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LM 886 IC chip
Abstract: TEKELEC te 358
Text: DISCRETE SEMICONDUCTORS BLV2045N UHF power transistor P relim inary specification Philips Sem iconductors 1998 O ct 01 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um te m perature
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BLV2045N
BLV2045N
OT39QA
LM 886 IC chip
TEKELEC te 358
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transistor ZA 16
Abstract: PLB16030U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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PLB16030U
OT437A
OT437A.
transistor ZA 16
PLB16030U
SC15
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m 32 ab transistor
Abstract: mlc444 bd239 equivalent
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter
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LXE15450X
m 32 ab transistor
mlc444
bd239 equivalent
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j78 transistor equivalent
Abstract: Transistor Equivalent list j160 capacitor philips transistor BD239 equivalent bd239 equivalent J6 transistor BD239 BY239 LLE16045X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16045X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LLE16045X
OT437A.
j78 transistor equivalent
Transistor Equivalent list
j160 capacitor philips
transistor BD239 equivalent
bd239 equivalent
J6 transistor
BD239
BY239
LLE16045X
SC15
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor
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RX1214B170W
7/00/02/pp12
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Nanotec Electronic GmbH
Abstract: No abstract text available
Text: REPRESENTATIVES »HYUNDAI CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8
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1015MathesonBlvd.
Nanotec Electronic GmbH
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TEKELEC te 360
Abstract: Naltron Jaco Electronics
Text: «HYUNDAI UNITED STA TES OF AMERICA Western Region ION Associates 9390 Research Blvd., Bldg. 2 Suite 210, Austin, TX 78759 Te 1:512-794-9006 Electrodyne 2620 S. Parker Road, Suite 395 Aurora, CO 80014 Te 1:303-695-8903 Fax:303-745-8924 ION Associates 221 E. Lamar Blvd., Suite 250
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120-A
TX78758
800-245-JACO
TEKELEC te 360
Naltron
Jaco Electronics
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NFM61 SP
Abstract: tekelec TA 355 TEKELEC te 358
Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1998 Nov 19 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature
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BLV2045N
BLV2045N
OT39QA
SCA60
/printrun/ed/pp10
NFM61 SP
tekelec TA 355
TEKELEC te 358
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Transistor Equivalent list
Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency
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LXE16350X
MBC423
OT439A.
Transistor Equivalent list
diode IN4148
Transistor AND DIODE Equivalent list
copper permittivity
TRIMMER capacitor
by239-800
erie feedthrough capacitors
BDT85
IN4148
LXE16350X
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Tekelec airtronic
Abstract: Elcom
Text: REPRESENTATIVES •HYUNDAI CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8
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Nanotec Electronic GmbH
Abstract: TE 2221
Text: • H Y U ND AI REPRESENTATIVES CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 GuenetteSt. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8
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MX0912B350Y
Abstract: No abstract text available
Text: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high
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MX0912B350Y
7110A2b
ampl95
T-33-15
MX0912B350Y
711D6Eb
D04b3L
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L4W 87
Abstract: L4W 75 305621 Naltron Nanotec Electronic GmbH
Text: REPRESENTATIVES “H Y U N D A I CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8
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diode BY239
Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency
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LLE15370X
OT437A.
diode BY239
Transistor Equivalent list
BY239
Transistor AND DIODE Equivalent list
philips ferrite 4b1
erie 1250-003
copper permittivity
BDT91
LLE15370X
SC15
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diode BY239
Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter
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LXE15450X
MLC446
OT439A.
diode BY239
bd239 equivalent
Transistor Equivalent list
MLC446
copper permittivity
43081
BD239
BY239
LXE15450X
SC15
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741 LEM
Abstract: AM/amplifier LEM 741
Text: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature
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BLV2045N
BLV2045N
OT39QA
SCA63
741 LEM
AM/amplifier LEM 741
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equivalent of SL 100 NPN Transistor
Abstract: MX0912B250Y
Text: Data sha e t status Preliminary specification data o f Issue July 1990 MX0912B250Y NPN silicon planar epitaxial microwave power transistor APPLICATION DESCRIPTION • Interdigitated structure; high Intended for use in co m m on base em itter efficiency. • Diffused em itter ballasting
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MX0912B250Y
M9Q-1195/Y
equivalent of SL 100 NPN Transistor
MX0912B250Y
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12NC philips diode 93
Abstract: transistor j7 Transistor Equivalent list 12NC philips chip resistor BDT91 BY239 LLE15180X SC15 POTENTIOMETER AB 10 K
Text: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency
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LLE15180X
OT437A.
12NC philips diode 93
transistor j7
Transistor Equivalent list
12NC philips chip resistor
BDT91
BY239
LLE15180X
SC15
POTENTIOMETER AB 10 K
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TEKELEC* te 358
Abstract: TEKELEC te 358 Elcom Nanotec Electronic GmbH
Text: "HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH TREK, LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TREK, LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TREK, LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontario K2M 2A8
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NPN Silicon Epitaxial Planar Transistor
Abstract: IEC134 MZ0912B100Y transistor Common Base amplifier NNN1
Text: blue binder, tab 12 Data sheet status Preliminary specification dats o f Issus July 1990 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting
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MZ0912B100Y
M90-1194/Y
NPN Silicon Epitaxial Planar Transistor
IEC134
MZ0912B100Y
transistor Common Base amplifier
NNN1
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