Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE: AN-83-001 TITLE: Mechanical Switch Extended Life Test Report Reference: RF Mechanical Switch, RF Relay Switch Report Date: August, 21.2009 Report Issued by: Ted Heil Report Reviewed by: Harvey Kaylie Report Status: Initial Release File Name
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AN-83-001
13\life
AN-83-001
M142736
AN83001
documeN-83-001
10038NA
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murata diplexer
Abstract: HP8594E LDC21897M19D-078 PF08107B LDC21897M19D POWER AMPLIFIER CIRCUIT DIAGRAM 10000 LTC4400 LTC4400-1 LTC4401 LTC4401-1
Text: DESIGN FEATURES ThinSOT RF Power Controllers Save Critical Board Space and Power in Portable RF Products by Ted Henderson and Shuley Nakamura Introduction The LTC4400-1 and LTC4401-1 provide RF power controller solutions for the latest cellular telephones. They
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LTC4400-1
LTC4401-1
1000pF
100pF
330pF
LTC4401-1
LDC21897M19D-078
PF08107B
murata diplexer
HP8594E
LDC21897M19D-078
PF08107B
LDC21897M19D
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
LTC4400
LTC4401
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AN83001
Abstract: daily production report sheet P2T-18 MSP2TA-18XL n12090 MSP2T-18 MSP2T-18XL 1000Life
Text: APPLICATION NOTE: AN-83-001 TITLE: Mechanical Switch Extended Life Test Report Reference: RF Mechanical Switch, RF Relay Switch Report Date: August, 21.2009 Report Issued by: Ted Heil Report Reviewed by: Harvey Kaylie Report Status: Initial Release File Name
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AN-83-001
AN83001
AN-83-001
M124642
N46570
daily production report sheet
P2T-18
MSP2TA-18XL
n12090
MSP2T-18
MSP2T-18XL
1000Life
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murata mqe001
Abstract: murata MQE001-902 MQE001 MQE001-902 murata vco MQE-001-902 VCO MQE001 vco with low power supply vco murata MQE0
Text: DESIGN IDEAS Low Noise Boost VCO Power Supply for Portable Applications by Ted Henderson Introduction Many portable RF products use voltage controlled oscillators VCOs to generate the RF carrier frequency. These applications often require low noise VCO power supply voltages that
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LTC1682
murata mqe001
murata MQE001-902
MQE001
MQE001-902
murata vco
MQE-001-902
VCO MQE001
vco with low power supply
vco murata
MQE0
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AN2393
Abstract: CYPRESS an2233a AN2233 abstract of Touch screen sensor Finger Sensor AN2041 CYPRESS an2393
Text: Application Note AN2393 Migrating from CSR to CSA Author: Ted Tsui Associated Project: No Associated Part Family: CY8C20x34, CY8C21x34, CY8C24x94 Software Version: PSoC Designer 4.3 w/CY8C20x34 Extension Pack Associated Application Notes: AN2233a, AN2041 Abstract
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AN2393
CY8C20x34,
CY8C21x34,
CY8C24x94
w/CY8C20x34
AN2233a,
AN2041
AN2393
CYPRESS an2233a
AN2233
abstract of Touch screen sensor
Finger Sensor
AN2041
CYPRESS an2393
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chang aluminum capacitor
Abstract: No abstract text available
Text: GOLD: A STRATEGIC CHOICE! by Ted Johansson and Jim Curtis Introduction The purpose of this paper is to discuss advantages and disadvantages of gold metallization used on RF-power devices, and its impact on device performance and reliability from a user’s perspective. The paper
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TRANSISTOR cBC 415
Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details
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TED-21,
TRANSISTOR cBC 415
Inside the RF Power Transistor
PTB20105
RF POWER TRANSISTOR
RF Transistor Selection
transistor theory
ericsson rf
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RF1K49221
Abstract: s2a15 ST9141A1002 AN9321 AN9322 MS-012AA AN7254 RF1K4922196 TB334
Text: RF1K49221 Data Sheet Title F1K 221 bt 5A, V, 30 m, D ted, al Cha el FET wer OST) utho August 1999 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET Features The RF1K49221 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This
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RF1K49221
RF1K49221
s2a15
ST9141A1002
AN9321
AN9322
MS-012AA
AN7254
RF1K4922196
TB334
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TED 2411
Abstract: dc-dc ted 1221 power dip 1222 smd NE
Text: DC/DC-Converter TED Series 2Watt • 2:1 wide input range • No derating up to +75°C • Metal case for good RFI-shielding • Short circuit protection • High efficiency up to 78% • Regulated outputs • Dual output models with separated outputs • 24-pin DIP with industry standard
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24-pin
TED 2411
dc-dc ted 1221
power dip 1222
smd NE
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Untitled
Abstract: No abstract text available
Text: INDEX OF THIN FILM PRODUCTS COVER SHEET - THIN FILM DIVISION LEADS THE W AY WA INDEX OF THIN FILM PRODUCTS PROCESS CAP ABILITIES CAPABILITIES MSIRP RELIABILITY PROGRAM MSDR 3 SERIES DUAL RESISTOR NETWORKS MSIR 3 SERIES DUAL ISOLA TED RESISTOR NETWORKS ISOLATED
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RSMT-23
135-F-0306
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Untitled
Abstract: No abstract text available
Text: S D -7 3 1 0 0 -0 0 3 3 M ATERIALS AND FINISHES BODY BRASS P LA TED NICKEL CENTER CONTACT PHOSPHOR BRONZE P LA TED GOLD INSULATOR TEFLON FERRULE BRASS P LA TED NICKEL CABLE ATTACHMENT: CENTER CONTACT CRIMP HEX.:1.69> OUTER CONDUCTOR— CRIMP(HEX.:5.41 PACKAGING: INDIVIDUAL PLASTIC BAGS
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58C/U141A/U
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Untitled
Abstract: No abstract text available
Text: S D -7 3 2 5 7 -5 0 0 1 1.244 ±.016 MATERIALS AND FINISHES BODY BRASS CONNECTOR INTERFACE P LA TED NICKEL PER MOLEX STANDARD P S -7 3 5 9 9 -0 0 0 0 CENTER CONTACT BRASS P LA TED SILVER INSULATOR TEFLON .120 *.ooi 3.05 SLEEVE,NUT BRASS *0.03 P LA TED NICKEL
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RG58C/U,
RG141A/U
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mmcx-j
Abstract: No abstract text available
Text: SD -73415-096 MATERIALS AND FINI5HES: BODY BRA5S PLA TED GOLD CONTACT BERYLLIUM COPPER P LA TED GOLD INSULATOR TEFLON 014 .35 f I / \ .108 2.75 .138 3.50 7 3 4 1 5 -0 9 6 3 PER COMMERCIAL REQUIREMENTS LEADS ORIENTED TOWARDS FEED HOLES 7 3 4 1 5 -0 9 6 2
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C4001
Abstract: S13-146
Text: 1 MEGABIT 1024KX 1-BIT CMOS STATIC RAM SIP MODULE PRELIMINARY IDT 7MC4001 FEATURES: DESCRIPTION: • H ig h -de n slty 1 m e g a b it (1024K x 1) C M O S sta tic RAM m odule • Surface m o un ted LCC c o m p o n e n ts m o un ted o n a co-fired c e ra m ic substrate
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1024KX
1024K
7MC4001
C4001
T71257
30-pin
S13-150
IDT7MC4001
S13-146
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Untitled
Abstract: No abstract text available
Text: EMI/RFI Ferrite Filtered Connector Series 400 SPECTRUM CONTROL Performance Features Impedance ohms • Superior filtering of high frequency interference ted ■ Low cost, high performance ferrite filter - s| so — Inner Contacts 28 ■ Prevents common-mode noise in signal
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S726
Abstract: PWS725/726 PWS726
Text: PWS725 / 726 ^ PWS725 / PWS726 B U R R -B R O W N I b b | Isolated, Unregulated DC/DC CONVERTERS FEATURES • PR O TEC TED AGAIN ST O U T P U T FA U LTS • IS OLA TED ± 7 TO ± I8 V D C O U T P U T FROM S IN G LE 7 TO 1BVDC SU PPLY • COM PACT • ± 15 m A O U T P U T AT RATED VOLTAGE ACCURACY
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PWS725
PWS726
1500Vrms
3500Vrms
240VAC
50/60HZ
IS0120
IS0121
S726
PWS725/726
PWS726
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Untitled
Abstract: No abstract text available
Text: F-207 ELEV A TED R F CO N N ECTO R iiRiksTRF SPECIFICATIONS For complete specifications see www.samtec.com?ESRF SIGNAL PINS PER ROW ESRF Insulator Material: Black LCP Contact Material: Phosphor Bronze Plating: Sn or Au over 50p" 1,27pm Ni RF Connector: Brass with Teflon
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F-207
r-0787
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TRF1070
Abstract: No abstract text available
Text: IN TEG RA TED TOSHIBA CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA8701AN SILICON MONOLITHIC PIF I SIF + ATT IC FOR T V/ VT R FEATURES PIF section • RF-Pre Amp. less by high input sensitivity • 3-Stage IF amplifier with variable gain
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TA8701AN
80dB//V
TA87Q1AN
TRF1070
TRF1066
TRF1060D
TRF1059D
TRF6010D
TRF1070
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Untitled
Abstract: No abstract text available
Text: 256K 256K x 1-BIT C M O S STATIC RAM SIP M O DULE IDT7MC156 FEATURES: DESCRIPTION: • H ig h -de n sity 256K (256K x 1) C M O S sta tic RAM m odule • S urface m o un ted LCC co m p o n e n ts m o un ted o n a co -fired c e ra m ic substrate • A va ila b le in low p rofile 28-p in c e ra m ic SIP (single In-line
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IDT7MC156
T7187
7MC156
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Untitled
Abstract: No abstract text available
Text: F-207 ELEV A TED R F C O N N E C TO R iiRiksTRF SPECIFICATIONS For complete specifications see www.samtec.com?ESRF Insulator Material: Black LCP Contact Material: Phosphor Bronze Plating: Sn or Au over 50p" 1,27pm Ni RF Connector: Brass with Teflon Operating Temp Range:
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F-207
2-26904858-F
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Untitled
Abstract: No abstract text available
Text: F-206-1 ELEV A TED R F C O N N EC TO R iiRiksTRF For complete specifications see www.samtec.com?ETRF Insulator Material: Black LCP Terminal Material: Phosphor Bronze Plating: Sn or Au over 50p" 1,27pm Ni RF Connector: Brass with Teflon Operating Temp Range:
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F-206-1
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Untitled
Abstract: No abstract text available
Text: IN TEG R A TED C IR C U ITS SC26C92 Dual universal asynchronous receiver/transmitter DUART Product specification Supersedes data of 1998 Sep 04 IC19 Data Handbook Philips Semiconductors 1998 Nov 09 PHILIPS PHILIPS Philips Semiconductors Product specification
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SC26C92
SC26C92
SCC2692
SCN2681
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Untitled
Abstract: No abstract text available
Text: IN TEG R A TED CIR C U ITS SA8016 2.5GHz low voltage fractional-N synthesizer Objective specification Supersedes data of 1998 Apr 06 Philips Semiconductors 1998 Oct 16 PHILIPS Objective specification Philips Semiconductors 2.5GHz low voltage fractional-N synthesizer
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SA8016
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TC518129
Abstract: No abstract text available
Text: IN TEG RA TED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518129 CPL / CFWL / CFTL - 70, TC518129 CPL / CFWL / CFTL - 80 TC518129 CPL / CFWL / CFTL -10, TC518129 CPL / CFWL / CFTL - 70L TC518129 CPL / CFWL / CFTL - 80L, TC518129 CPL / CFWL / CFTL -1 0L
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TC518129
072-WORD
TC518129CPL/CFL/CFWL/CFTL
578-bit
TC518129CFWL-70,
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