Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TD 3101 N Search Results

    TD 3101 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LPO3310-103MLB Coilcraft Inc General Purpose Inductor, 10uH, 20%, 1 Element, Ferrite-Core, SMD, 1313, ROHS COMPLIANT Visit Coilcraft Inc
    LPO3310-153MXB Coilcraft Inc General Purpose Inductor, 15uH, 20%, 1 Element, Ceramic-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc Buy
    LPO3310-102MXC Coilcraft Inc General Purpose Inductor, 1uH, 20%, 1 Element, Ceramic-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc Buy
    LPO3310-153MLC Coilcraft Inc General Purpose Inductor, 15uH, 20%, 1 Element, Ferrite-Core, SMD, 1313, ROHS COMPLIANT Visit Coilcraft Inc
    LPO3310-103MLC Coilcraft Inc General Purpose Inductor, 10uH, 20%, 1 Element, Ferrite-Core, SMD, 1313, ROHS COMPLIANT Visit Coilcraft Inc

    TD 3101 N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ptb 99 atex 3128 x

    Abstract: PTB 99 ATEX atex 3128 x 99-ATEX ptb 99 atex 3128 GHG 960 1955 R0004 GHG 960 1956 R0003 ATEX3128X ptb 99 atex 3101 R0054
    Text: 80-81.qxp 8/11/2010 10:42 AM Page 81 Enlargement and Multiple International Standards Flameproof and Increased Safety 4F IP66 Sizes M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx 4F Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:


    Original
    M20-M63: R0054 R0055 ptb 99 atex 3128 x PTB 99 ATEX atex 3128 x 99-ATEX ptb 99 atex 3128 GHG 960 1955 R0004 GHG 960 1956 R0003 ATEX3128X ptb 99 atex 3101 R0054 PDF

    GHG 960 1955 R 0023

    Abstract: PTB 99 ATEX ptb 99 atex 3128 x M50 .0022 99-ATEX ghg 748 ptb 99 atex 3128 ptb atex 3101 R0001 R0022
    Text: 78-79.qxp 8/11/2010 10:41 AM Page 78 Ex-e 4F International Standards Flameproof and Increased Safety 4F IP66 Sizes M12-M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:


    Original
    M12-M16: M20-M63: 0004X GHG 960 1955 R 0023 PTB 99 ATEX ptb 99 atex 3128 x M50 .0022 99-ATEX ghg 748 ptb 99 atex 3128 ptb atex 3101 R0001 R0022 PDF

    ptb 99 atex 3128 x

    Abstract: ptb 99 atex 3101 atex 3128 M20-M63 ghg 748 99-ATEX M12-M16 PTB 99 ATEX ptb 99 atex 3128 Nut M63
    Text: 78-79.qxp 8/11/2010 10:41 AM Page 79 Ex-i International Standards Flameproof and Increased Safety IP66 Sizes M12-M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx 4F 4F Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:


    Original
    M12-M16: M20-M63: 0004X temperatu60 ptb 99 atex 3128 x ptb 99 atex 3101 atex 3128 M20-M63 ghg 748 99-ATEX M12-M16 PTB 99 ATEX ptb 99 atex 3128 Nut M63 PDF

    2N7367

    Abstract: 2N3768 2N7368 IRGMIC50U MIL-PRF19500 TRANSISTOR SUBSTITUTION 1993 marking 589A
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 July 1998 INCH-POUND MIL-PRF-19500/589A 15 April 1998 SUPERSEDING MIL-S-19500/589 24 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR


    Original
    MIL-PRF-19500/589A MIL-S-19500/589 2N7367 2N7368, MIL-PRF-19500. 2N3768 2N7368 IRGMIC50U MIL-PRF19500 TRANSISTOR SUBSTITUTION 1993 marking 589A PDF

    CP CLARE hg 1004

    Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY


    Original
    MIL-PRF-19500/304D MIL-S-19500/304C 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, CP CLARE hg 1004 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ


    Original
    2N4150S MIL-PRF-19500 2N4150SJ) 2N4150SJX) 2N4150SJV) MIL-STD-750 MIL-PRF-19500/394 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ • JANTX level (2N4150SJX)


    Original
    2N4150S MIL-PRF-19500 2N4150SJ) 2N4150SJX) 2N4150SJV) MIL-STD-750 MIL-PRF-19500/394 PDF

    2N4150

    Abstract: 2N4150J 2N4150JV 2N4150JX
    Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)


    Original
    2N4150 MIL-PRF-19500 2N4150J) 2N4150JX) 2N4150JV) MIL-STD-750 MIL-PRF-19500/394 2N4150 2N4150J 2N4150JV 2N4150JX PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)


    Original
    2N4150 MIL-PRF-19500 2N4150J) 2N4150JX) 2N4150JV) MIL-STD-750 MIL-PRF-19500/394 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)


    Original
    2N4150 MIL-PRF-19500 2N4150J) 2N4150JX) 2N4150JV) MIL-STD-750 MIL-PRF-19500/394 PDF

    2N4150S

    Abstract: 2N4150SJ 2N4150SJV 2N4150SJX
    Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ


    Original
    2N4150S MIL-PRF-19500 2N4150SJ) 2N4150SJX) 2N4150SJV) MIL-STD-750 MIL-PRF-19500/394 2N4150S 2N4150SJ 2N4150SJV 2N4150SJX PDF

    G20N120E2

    Abstract: AN7254 AN7260 HGTG20N120E2 LD26 HGTG
    Text: HGTG20N120E2 S E M I C O N D U C T O R 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL


    Original
    HGTG20N120E2 O-247 780ns HGTG20N120E2 150oC. G20N120E2 AN7254 AN7260 LD26 HGTG PDF

    G20N120E2

    Abstract: AN7254 AN7260 HGTG20N120E2 LD26
    Text: HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss


    Original
    HGTG20N120E2 O-247 780ns HGTG20N120E2 150oC. G20N120E2 AN7254 AN7260 LD26 PDF

    lr 3103

    Abstract: D012 PW02 TMS3102LC TMS3103LC
    Text: TMS 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER TMS 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER TMS 3103 LC, NC-DUAL 64-BIT STATIC SHIFT REGISTER MOS LSI features DC to 2.5-MHz operation Low power dissipation Direct interface with DTL/TTL Static operation


    OCR Scan
    100-BIT 80-BIT 64-BIT 200-bit lr 3103 D012 PW02 TMS3102LC TMS3103LC PDF

    Untitled

    Abstract: No abstract text available
    Text: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation


    OCR Scan
    100-BIT 80-BIT 64-BIT 200-BIT S3101 PDF

    shift register ttl

    Abstract: A 3101 8 pin td 3101 n D021 PW02 SN74I
    Text: T M S 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER T M S 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER T M S 3103 LC, N C -DUAL 64-BIT STATIC SHIFT REGISTER features • > z DC to 2.5-M H z operation • Low power dissipation § 3 „•< • D irect interface w ith D T L /T T L


    OCR Scan
    100-BIT 80-BIT 64-BIT 200-bit sn7400 SN74I shift register ttl A 3101 8 pin td 3101 n D021 PW02 SN74I PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION CONTROL DRAWING 1. MATING INTERFACE DIMENSIONS FOR PLUG PER MIL-STD-34B Fig. 310-1 AND DYNAWAVE MD-9B. 2. ELECTRICAL DC TO 26.5 GHz. 1.05 + .005 x FGHz. .03 dB x 7 FGHz. 50 335 FREQUENCY RANGE GHz VSWR (M A X ) * -INSERTION LOSS (d B M AX) * NOMINAL IMPEDANCE (O H M S )VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB D OW N)-TEMPERATURE RATING (DEGREES CENTIGRADE)-DIELECTRIC WITHSTANDING VOLTAGE (MAX VRMS)


    OCR Scan
    MIL-STD-34B PDF

    Untitled

    Abstract: No abstract text available
    Text: 8MA 08M Connactora_ For 8aml*Rlgld Cabla and Printed Clroult Mount MIL-C-39012/92 _L_ \l — r(HM) 38 M ilita ry Part N u ra a r 13801 •3001’ •3 0 0 1 1 *•3 10 1 *•3 1 0 1 ’ *■ 3101' -3201’ *•3301’ pMSELr O utllna


    OCR Scan
    MIL-C-39012/92 MIL-C-39012/W PDF

    LA 3101 ic

    Abstract: TCM3101 LA 3101
    Text: TCM 3101 FSK MODEM D 2 8 6 6 , AU G U ST 1 9 8 5 — REVISED FEBRUARY 1 9 8 6 j NO T REC OM M ENDED FOR NEW DESIGN DUAL-IN-LINE PACKAGE TOP VIEWI For n e w design, refer to T C M 3 1 0 5 vdd C CLK £ 2 CDT [ I 3 RXA £ 4 description TRSC 5 The T C M 3 1 0 1 is a single-chip asynchronous


    OCR Scan
    TCM3101 LM124 LA 3101 ic LA 3101 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR TÉ dF 72C 01935 3918590 GENERAL S EM IC O ND UC TOR General 2p" Sem iconductor Industries, Ine . | BTiaSÍO O D O n 3 5 S J ~ O r - 33 -^ s q U H R E T Ì COMPANY T y p ic a l D evice Types: 2 N 6 92 2, 2N 6923 25-60 AMP Ultra Fast


    OCR Scan
    20nsec 150nsec 800nsec TWX910-950-1942 PDF

    2SK1815

    Abstract: DDD310G A2245
    Text: 2SK1815 S IP M O S F U J I P O W E R M O S -F E T N-CHAIMIMEL SILICON POWER MOS-FET _ - TTT ^ r ­ r-111 o tr i I to • Features Outline Drawings • High current • Low no-resistance • N o secondary breakdow n • Low driving p o w e r


    OCR Scan
    2SK1815 --r-111 A2-245 DDD310G A2245 PDF

    BS9522 f0014

    Abstract: circular connector MK 4128 mk 5015 plessey connectors
    Text: LMJ d e s i g n e d to m e e t th e r e q u i r e m e n t s of HDL ° = iiii WEALD ELECTRO NICS LIMITED WEALD ELECTRONICS LIMITED PRODUCT SAFETY These notes are intended to be used in conjunction with Weald Product Catalogues and Product Specifications. Products may be safely used in the applications for which they have been designed and


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ9925DY Se m ic o n d u c to r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 rDS(on) (Q ) I d (A) 0.05 @ Vqs = 4.5 V ±5.0 0.06 @ VGs = 3.0 V ±4.2 0.08 @ Vos = 2.5 V ±3.6 u D2 D2 1 U SO-8 Si [ T ~8~1 D, Gì T 1 G l D, Ï1 0 —


    OCR Scan
    9925DY 18-Dec-96 S-513I1-- I8-Dec-96 PDF

    IMBT3904

    Abstract: ITT INTERMETALL
    Text: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.


    OCR Scan
    4bfi2711 IMBT3903, IMBT3904 IMBT3905 IMBT3906 IMBT3903 IMBT3904 O-236) 15000Hz ITT INTERMETALL PDF