ptb 99 atex 3128 x
Abstract: PTB 99 ATEX atex 3128 x 99-ATEX ptb 99 atex 3128 GHG 960 1955 R0004 GHG 960 1956 R0003 ATEX3128X ptb 99 atex 3101 R0054
Text: 80-81.qxp 8/11/2010 10:42 AM Page 81 Enlargement and Multiple International Standards Flameproof and Increased Safety 4F IP66 Sizes M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx 4F Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:
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M20-M63:
R0054
R0055
ptb 99 atex 3128 x
PTB 99 ATEX
atex 3128 x
99-ATEX
ptb 99 atex 3128
GHG 960 1955 R0004
GHG 960 1956 R0003
ATEX3128X
ptb 99 atex 3101
R0054
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GHG 960 1955 R 0023
Abstract: PTB 99 ATEX ptb 99 atex 3128 x M50 .0022 99-ATEX ghg 748 ptb 99 atex 3128 ptb atex 3101 R0001 R0022
Text: 78-79.qxp 8/11/2010 10:41 AM Page 78 Ex-e 4F International Standards Flameproof and Increased Safety 4F IP66 Sizes M12-M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:
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M12-M16:
M20-M63:
0004X
GHG 960 1955 R 0023
PTB 99 ATEX
ptb 99 atex 3128 x
M50 .0022
99-ATEX
ghg 748
ptb 99 atex 3128
ptb atex 3101
R0001
R0022
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ptb 99 atex 3128 x
Abstract: ptb 99 atex 3101 atex 3128 M20-M63 ghg 748 99-ATEX M12-M16 PTB 99 ATEX ptb 99 atex 3128 Nut M63
Text: 78-79.qxp 8/11/2010 10:41 AM Page 79 Ex-i International Standards Flameproof and Increased Safety IP66 Sizes M12-M16: PTB 99 ATEX 3101 X Sizes M20-M63: PTB 99 ATEX 3128 X IECEx 4F 4F Gland Type: Non-armoured Cable Type: Non-armoured Certifications and Compliances:
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Original
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M12-M16:
M20-M63:
0004X
temperatu60
ptb 99 atex 3128 x
ptb 99 atex 3101
atex 3128
M20-M63
ghg 748
99-ATEX
M12-M16
PTB 99 ATEX
ptb 99 atex 3128
Nut M63
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2N7367
Abstract: 2N3768 2N7368 IRGMIC50U MIL-PRF19500 TRANSISTOR SUBSTITUTION 1993 marking 589A
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 July 1998 INCH-POUND MIL-PRF-19500/589A 15 April 1998 SUPERSEDING MIL-S-19500/589 24 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR
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MIL-PRF-19500/589A
MIL-S-19500/589
2N7367
2N7368,
MIL-PRF-19500.
2N3768
2N7368
IRGMIC50U
MIL-PRF19500
TRANSISTOR SUBSTITUTION 1993
marking 589A
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PDF
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CP CLARE hg 1004
Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY
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MIL-PRF-19500/304D
MIL-S-19500/304C
1N3885,
1N3886,
1N3888,
1N3890,
1N3891,
1N3893,
1N3890R,
1N3891R,
CP CLARE hg 1004
1N3888
UNF-2B
01903
1N3886
clare mercury-wetted relay
hgp1004
1n3880r
1N3884
diode 1n3893
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
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Untitled
Abstract: No abstract text available
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ • JANTX level (2N4150SJX)
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
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PDF
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2N4150
Abstract: 2N4150J 2N4150JV 2N4150JX
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)
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Original
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2N4150
MIL-PRF-19500
2N4150J)
2N4150JX)
2N4150JV)
MIL-STD-750
MIL-PRF-19500/394
2N4150
2N4150J
2N4150JV
2N4150JX
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)
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Original
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2N4150
MIL-PRF-19500
2N4150J)
2N4150JX)
2N4150JV)
MIL-STD-750
MIL-PRF-19500/394
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150J • JANTX level (2N4150JX)
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Original
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2N4150
MIL-PRF-19500
2N4150J)
2N4150JX)
2N4150JV)
MIL-STD-750
MIL-PRF-19500/394
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PDF
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2N4150S
Abstract: 2N4150SJ 2N4150SJV 2N4150SJX
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ
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Original
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
2N4150S
2N4150SJ
2N4150SJV
2N4150SJX
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PDF
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G20N120E2
Abstract: AN7254 AN7260 HGTG20N120E2 LD26 HGTG
Text: HGTG20N120E2 S E M I C O N D U C T O R 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL
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Original
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HGTG20N120E2
O-247
780ns
HGTG20N120E2
150oC.
G20N120E2
AN7254
AN7260
LD26
HGTG
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PDF
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G20N120E2
Abstract: AN7254 AN7260 HGTG20N120E2 LD26
Text: HGTG20N120E2 Semiconductor 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss
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Original
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HGTG20N120E2
O-247
780ns
HGTG20N120E2
150oC.
G20N120E2
AN7254
AN7260
LD26
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PDF
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lr 3103
Abstract: D012 PW02 TMS3102LC TMS3103LC
Text: TMS 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER TMS 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER TMS 3103 LC, NC-DUAL 64-BIT STATIC SHIFT REGISTER MOS LSI features DC to 2.5-MHz operation Low power dissipation Direct interface with DTL/TTL Static operation
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100-BIT
80-BIT
64-BIT
200-bit
lr 3103
D012
PW02
TMS3102LC
TMS3103LC
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PDF
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Untitled
Abstract: No abstract text available
Text: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation
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100-BIT
80-BIT
64-BIT
200-BIT
S3101
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PDF
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shift register ttl
Abstract: A 3101 8 pin td 3101 n D021 PW02 SN74I
Text: T M S 3101 LC, N C -DUAL 100-BIT STATIC SHIFT REGISTER T M S 3102 LC, N C -DUAL 80-BIT STATIC SHIFT REGISTER T M S 3103 LC, N C -DUAL 64-BIT STATIC SHIFT REGISTER features • > z DC to 2.5-M H z operation • Low power dissipation § 3 „•< • D irect interface w ith D T L /T T L
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100-BIT
80-BIT
64-BIT
200-bit
sn7400
SN74I
shift register ttl
A 3101 8 pin
td 3101 n
D021
PW02
SN74I
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PDF
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION CONTROL DRAWING 1. MATING INTERFACE DIMENSIONS FOR PLUG PER MIL-STD-34B Fig. 310-1 AND DYNAWAVE MD-9B. 2. ELECTRICAL DC TO 26.5 GHz. 1.05 + .005 x FGHz. .03 dB x 7 FGHz. 50 335 FREQUENCY RANGE GHz VSWR (M A X ) * -INSERTION LOSS (d B M AX) * NOMINAL IMPEDANCE (O H M S )VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB D OW N)-TEMPERATURE RATING (DEGREES CENTIGRADE)-DIELECTRIC WITHSTANDING VOLTAGE (MAX VRMS)
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MIL-STD-34B
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PDF
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Untitled
Abstract: No abstract text available
Text: 8MA 08M Connactora_ For 8aml*Rlgld Cabla and Printed Clroult Mount MIL-C-39012/92 _L_ \l — r(HM) 38 M ilita ry Part N u ra a r 13801 •3001’ •3 0 0 1 1 *•3 10 1 *•3 1 0 1 ’ *■ 3101' -3201’ *•3301’ pMSELr O utllna
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OCR Scan
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MIL-C-39012/92
MIL-C-39012/W
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PDF
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LA 3101 ic
Abstract: TCM3101 LA 3101
Text: TCM 3101 FSK MODEM D 2 8 6 6 , AU G U ST 1 9 8 5 — REVISED FEBRUARY 1 9 8 6 j NO T REC OM M ENDED FOR NEW DESIGN DUAL-IN-LINE PACKAGE TOP VIEWI For n e w design, refer to T C M 3 1 0 5 vdd C CLK £ 2 CDT [ I 3 RXA £ 4 description TRSC 5 The T C M 3 1 0 1 is a single-chip asynchronous
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OCR Scan
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TCM3101
LM124
LA 3101 ic
LA 3101
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PDF
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Untitled
Abstract: No abstract text available
Text: GENERAL SEMICONDUCTOR TÉ dF 72C 01935 3918590 GENERAL S EM IC O ND UC TOR General 2p" Sem iconductor Industries, Ine . | BTiaSÍO O D O n 3 5 S J ~ O r - 33 -^ s q U H R E T Ì COMPANY T y p ic a l D evice Types: 2 N 6 92 2, 2N 6923 25-60 AMP Ultra Fast
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20nsec
150nsec
800nsec
TWX910-950-1942
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PDF
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2SK1815
Abstract: DDD310G A2245
Text: 2SK1815 S IP M O S F U J I P O W E R M O S -F E T N-CHAIMIMEL SILICON POWER MOS-FET _ - TTT ^ r r-111 o tr i I to • Features Outline Drawings • High current • Low no-resistance • N o secondary breakdow n • Low driving p o w e r
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OCR Scan
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2SK1815
--r-111
A2-245
DDD310G
A2245
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PDF
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BS9522 f0014
Abstract: circular connector MK 4128 mk 5015 plessey connectors
Text: LMJ d e s i g n e d to m e e t th e r e q u i r e m e n t s of HDL ° = iiii WEALD ELECTRO NICS LIMITED WEALD ELECTRONICS LIMITED PRODUCT SAFETY These notes are intended to be used in conjunction with Weald Product Catalogues and Product Specifications. Products may be safely used in the applications for which they have been designed and
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9925DY Se m ic o n d u c to r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 rDS(on) (Q ) I d (A) 0.05 @ Vqs = 4.5 V ±5.0 0.06 @ VGs = 3.0 V ±4.2 0.08 @ Vos = 2.5 V ±3.6 u D2 D2 1 U SO-8 Si [ T ~8~1 D, Gì T 1 G l D, Ï1 0 —
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9925DY
18-Dec-96
S-513I1--
I8-Dec-96
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PDF
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IMBT3904
Abstract: ITT INTERMETALL
Text: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.
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4bfi2711
IMBT3903,
IMBT3904
IMBT3905
IMBT3906
IMBT3903
IMBT3904
O-236)
15000Hz
ITT INTERMETALL
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PDF
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