TCL 012-124 DC Search Results

PC2-6400

Abstract: SODIMM DDR2 Mechanical Dimensions NT1GT64UH8C0FN-3C 9850ft PC2-5300 SSTL-18 NT2GT64U8HC0BN-3C nanya 2Gb 800 sodimm 64mx16 A2149
Contextual Info: NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM C-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400 PC2-6400 -37B -3C -AD

GM71V18163C

Contextual Info: GM71V18163C GM71VS18163CL LG S em icoo C o.,Ltd. # 1,048,576 W O R D S x 16 B IT CM OS D Y N A M IC RA M Description The Features G M 71V S 18163C /CL is the new generation dynam ic R A M organized 1,048,576 x 16 bit. G M 71V (S)18163C /CL has realized higher density, higher perform ance and various

KKZ 09

Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

GM71V18163BT6

Abstract: GM71V18163BJ7 GM71V18163BT7 GM71V18163BT gm71v18163bj6 irp 540
Contextual Info: @ LG Semicon. Co. LTD. D escription Features The GM71V S 18163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)18163B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: TOSHIBA THMY6416C1EG-80H TENTATIVE TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

CS 49E 210

Contextual Info: NT256T64UH4B0FY Preliminary 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM NT5TU32M16BG

Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71V S 18163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)18163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: 128K x 64 FLOW THRU ZBT SRAM 128K x 64 PIPELINE ZBT SRAM ADVANCE INFORMATION IDT7MB V41 53 IDT7MBV4154 FEATURES: DESCRIPTION: • Low profile 160-lead AMP Free Height Surface Mount Board-to-Board Connectorfam ily 5mm-8mm plug options • High speed - 50 MHz flow thru, 100 MHz pipeline

BEG-80

Contextual Info: TOSHIBA TH M Y728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-W ORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TO SHIBA THMY6416H1EG-80 TENTATIVE T O S H IB A H Y BR ID D IGITAL IN TEG RA TED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416H1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

SDRAM aeroflex micron die

Abstract: CKE 2009 4164 dram 524,288-word x 16-bit MT48LC16M16A2 Y16Y BA1182 DQ86 BA872
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: GMM7658287CNTG-5/6 u 8,388,608WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features * 144 pins Dual In-Line Package - GMM7658287CNTG : Gold plating * Extended Data Out EDO Mode Capability * Single Power Supply * Fast Access Time & Cycle Time ,TT .

Contextual Info: GM71V S 18163C(CL) 1Mx16, 3.3V, 1K Ref, EDO * * * * Pin Configuration 1,048,576 W ords x 16 Bit Organization Extended Data Out M ode Capability Single Pow er Supply (3.3V+/-0.3V) Fast Access Tim e & Cycle Time Vcx-E 3 3 1015 ¡o] 1/014 1/02 (T 3 1/013 1/03 H

Contextual Info: MITSUBISHI LSIs ' MH1S72CXJ-10,-12,-15 75,497,472-BIT 1,048,576-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION The MH1S72CXJ is an 1M word by 72-bit Synchronous dynamic RAM module and consists of five industry standard

NEC 4218165-60

Abstract: PD42S18165-60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿IPD42S18165, 4218165 16 M-BIT DYNAM IC RAM 1 M-W ORD BY 16-BIT, EDO, BYTE READ/W RITE MODE D e s c rip tio n The luPD42S18165, 4218165 are 1.048.576 words by 56 bits CMOS dynamic RAMs with optional EDO, EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: TO SH IBA THMD12N11 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.

Contextual Info: G M 71V 16163C tf71VS16163CL G M 71V S16163C L i, 048,576 w o r d s x i 6 b i t I jc 'îpmîivm fVi i fii ^ e r r m o n i.- o .y iA e t, ,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM 71V S 16163 C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit.

TC59WM815BFT

Abstract: 674h AN 7580
Contextual Info: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.

ic ns 4263

Contextual Info: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various

Contextual Info: July 1998 Revision 1.1 data sheet GOB256UV6431 A -(67/84/100/125)Q-S 2MByte (256K x 64) CMOS Synchronous Graphic Module General Description The GOB256UV6431(A)-(67/84/100/125)Q-S is a high performance, 2-megabtye synchronous, graphic RAM module organized as 256K words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.

tsop 66

Contextual Info: July 1998 Revision 1.1 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512K x 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431(A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized as 512K words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.