TCH7250 Search Results

GT20D101

Abstract: GT20D201 pc180
Contextual Info: 45E D • TCH7250 0017ÔS1 TOSM T ■ TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR - GT20D201 SILICON P CHANNEL TYPE TOSHIBA D IS C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance I Yfe I =10S (TYP.)

2sc2704

Abstract: 2SA1144 AC46C Toshiba 2sC2704
Contextual Info: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA Sb <DI S C R E T E / O P T O 5bC 07586 J J — 0~J 2SC2704 SILICON NPN EPITA X IA L TYPE PCT PROCESS) AUDIO FREQUENCY A M P L I F I E R DE I TCH7250 DQD7Sflti 0 f Unit in mm APPLICATIONS. 7 .9 M A X .

Toshiba gt20d101

Contextual Info: 45E D • TCH7250 0017ÔS1 T ■ TOSHIBA IN S U LA T ED G ATE B IP O LA R T R A N S IS TO R TOS M - SILICO N P C H A N N E L T Y P E TOSHIBA GT20D201 DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance

T0T7250

Abstract: FS1N
Contextual Info: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P-|dB = 36 dBm at 5.9 GHz to 6.4 GHz

S3006D

Abstract: S3060S k39c DIODE 39c
Contextual Info: DE I TQT7BSQ 0000532 ñ — 9097250 TOSHIBA DI S C R E T E / O P T O = ^ t> - y - r 7 r - K 39C 0 0 5 3 2 0 7~-/> o -7 4 ;/ P Í t f ; o M icrowave + + / 1 & ffl Mi x e r / D e t e c t o r • i& m g - c - i - * i fé • Low No i se N F „ = 6.0 d B

Contextual Info: TOSHIBA Discrete Semiconductors 2SJ238 Field Effect Transistor U n i t in m m Silicon P Channel MOSType L2-t>MOS IV 4.6MAX. High Speed, High Current DC-DC Converter, 1,6 MAX. 0.4 ± 0 .0 5 1.7 MAX. J3a= Relay Drive and Motor Drive Applications “ 3 n F e a tu re s

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TIM6472-30L FEATURES • LOW INTERMODULATION DISTORTION IM 3 = - 4 3 dBc at Po = 34.5 dBm, Single Carrier Level - HIGH POWER PldB = 4 4 .5 dBm at 6.4 GHz to 7.2 GHz • HIGH GAIN G IdB = 7-° dB at 6 4 GHz t0 7 2 GHz - BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz

2SC2115

Abstract: DDD374 S21E
Contextual Info: 3T TOSHIBA {DISCRETE/OPTO} 9097250 TOSHI BA DISCRETE/OPTO 39C 00370 o u H F -c o i i s '<-s vi& m & M m m a* O U H F —C O High Band Speed T^3/-/S . Low No ¡ s e Ampi i f i e r App 1 i c a I i o n s Swi t c h i n g A p p 1 i c a t i o n s • f t = 6.5GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz

Contextual Info: TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39 dBm at 5.3 GHz to 5.9 GHz • High gain - G idB = 8.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package

n25d

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -42 dBc at Po = 3 1 .5 dBm, - Single carrier level • High power - P1dB = 42.0 dBm at 6.4 GHz to 7.2 GHz

Contextual Info: TOSHIBA S4D88N S4D88N,S4D88X LED SMD Lamp Outline drawing SURFACE MOUNT DEVICE as ni Y FEATURES • • • • • 2.0 L X 1,25(W) X 1,1(H)mm SIZE SMALL PACKAGE - HIGH DENSITY MOUNTING IS AVALIABLE AVAILABLE OF AUTOMOUNTING MACHINE USE DIP AND REFLOW SOLDERING ARE APPLICABLE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : VCE sat = 4.0V (Max.)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P-idB = 39-5 dBm at 5.9 GHz to 6.4 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-15 Features • High power - p 1dB = 42.0 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications Q¡ = 25°C

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Silicon N Channel MOS Type l?-rc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ‘ ^D S (O N ) = 0 -0 8 Q (T y p .)

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1113 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType L2-rt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

Contextual Info: TOSHIBA TLG1005, TLGD1005, TLPG1005, TLOE1005, TLYE1005, TLS1005, TLRA1005 LED Surface Mount Device Unit in mm Features • 2 mm Thrust Out Domed Lens • 3.2 L x 2.4(W) x 2.5(H) mm Size - High Efficiency SMD Lamps - Realizing over 5 times Luminous than TL*1002 Series

Contextual Info: G a As INFRARED EMITTER TLN107A TLN107A INFRARED LED FOR PHOTO INTERRUTER OPTO-ELECTRONIC SWITCH INFRARED RAYS APPLIED EQUIPMENT • • • High radiant intensity Excellent linearity of radiant intensity and modulation by pulse operation and high frequency is possible.