TCH724FL Search Results

Contextual Info: •^□^7240 Q02SGÜS 41G « T O S E TOSHIBA TOSHIBA LOGIC/MEMORY TC59S1604 TC59S1608 b^E » t a r g e t s il ic o n g a t e c m o s s p e c 2,097,152 BY 8 BIT SYNCHRONOUS DRAM DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM (SDRAM) using a single 3.3Part -volt

Contextual Info: SILICON MONOLITHIC TOSHIBA CM OS DIGITAL INTEGRATED CIRCUIT TENTATIVE DATA UNDER DEVELOPMENT 2-INPUT OR GATE The TC7SET32 is an advanced high speed C M O S 2-INPUT TC7SET32F O R GATE fabricated with silicon gate C M O S technology. It achieves the high speed operation similar to equivalent

Contextual Info: - TC74VHC139F/FN/FS DUAL 2 - T O -4 LINE DECODER The TC74VHC139 is an advanced high speed CMOS 2 to 4 LINE DECODER / DEMULTIPLEXER fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent

Contextual Info: TOSHIBA TC551001BPL/BFL/BFTiyBTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with, an operating cur­

DS0026CN

Abstract: sn7404 HC801 TCD102C-1 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD
Contextual Info: TOSHIBA ~b? -CLOGIC/MEMORY} 9 09 72 48 T OS HI BA ^ 0 ^ 7 5 4 0 DOCHSai 5 |~~ ÍL O G I C / M E M O R Y CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device) 67 C 0 9 5 2 1 TCD102C-1 D T-41-55 The TDS102C-1 is a high resolution and high sensitivity 2048 element

Contextual Info: TOSHIBA TÜT724Ö 00 2û 4f l3 20b B THM324000BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM324000BS/BSG is a 4,194,304 words by 32 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ on the printed circuit board. This module can be used as well as 8,388,608 words by 16 bits dynamic RAM module, by means

Contextual Info: INTEGRATED TOSHIBA TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC 74A CT 1 1 2P/F/FN DATA SILICON M O N O LITH IC DUAL J - K FLIP FLOP WITH PRESET AND CLEAR The TC74ACT112 is an advanced high speed CMOS DUAL JK FLIP FLOP fabricated with silicon gate and double - layer

Contextual Info: -60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3680A0 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 18 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high

Contextual Info: TOSHIBA TC514273BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514273BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514273BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: SILICON MONOLITHIC TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7WT74FU D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7W T74FU is an advanced high speed CMOS D-FLIP FLOP fabricated w ith silicon gate CMOS technology. It achieves th e high speed operation sim ilar to eq uivalent

Contextual Info: TOSHIBA TC74VH CT374AF/AFW/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT374AF, TC74VHCT374AFW, TC74VHCT374AFT OCTAL D-TYPE FLIP-FLOP WITH 3 -STATE OUTPUT The TC74VHCT374A is an advanced high speed CMOS OCTAL FLIP-FLOP with 3 -STATE OUTPUT fabricated

TC518128CFL

Contextual Info: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518128CFL/CFWL/CFTL-70V, -80V DATA SILICON GATE CM O S TENTATIVE 131,072 W O R D S X 8 BIT CM O S PSEUDO STATIC RAM DESCRIPTION The TC518128C-V Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED TO SHIBA CIRCUIT TECHNICAL TC74LVQ245F, TC74LVQ245FW TC74LVQ245FS DATA SILICON M O NO LITHIC OCTAL BUS TRANSCEIVER The TC74LVQ245 is a high speed CMOS OCTAL BUS TRANSCEIVER fabricated w ith silicon gate and d ou b le­

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7W 66F/FU Dual Bilateral Switch The TC7W66 is a high speed C2MOS Dual Bilateral Switch fabricated with silicon gate C2MOS technology. It consists of four independent high speed switches capable of con­ trolling either digital or analog signals while maintaining the C2MOS low

Contextual Info: - TC74VHC595F/FN/FS 8 -BIT SHIFT REGISTER/LATCH 3 -STATE _ The TC74VHC595 is an advanced high speed 8 -BIT SHIFT REGISTER / LATCH fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

TC5816AFT

Contextual Info: TOSHIBA TC 5816A D C 16Mbit 2M X 8 BIT CMOS NAND EEPROM PRELIMINARY Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programma­ ble Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a

tc5118160

Contextual Info: INTEGRATED . TO S H IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118160AJ / AFT - 60 TC5118160AJ / AFT - 70 SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 words by 16 bits.

Contextual Info: TOSHIBA TC74VHC132F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC132F, TC74VHC132FN, TC74VHC132FS, TC74VHC132FT QUAD 2 -INPUT SCHMITT NAND GATE The TC74VHC132 is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS

Contextual Info: TOSHIBA T C 55257C P iy C F iy C S P iy C F IL /C T R L - 70L / 85iy i 0L PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description T h e T C 5 5 2 5 7 C P L is a 2 6 2 ,1 4 4 bit C M O S static random acce ss m e m ory organized as 3 2 ,7 6 8 w o rd s by 8 bits and operated from

Contextual Info: TOSHIBA TC74VHC573F/FW/FS/FT TOSHIBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC573F, TC74VHC573FW, TC74VHC573FS, TC74VHC573FT OCTAL D-TYPE LATCH WITH 3 -STATE OUTPUT The TC74VHC573 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon gate

Contextual Info: TC4S69F TC4S69F INVERTER GATE U nit in mm + 0.2 28-03 The TC4S69F is three stage inverter. The output is provided with the buffer, the input / output voltage characteristic has been improved. Thus an increase in propagation delay time caused by an increase in load capacity is kept to a

tc55v328aj

Contextual Info: TOSHIBA TC55V328AJ-15/17/20 SILICON GATE CMOS 32,768 WORD x 8 BIT CMOS STATIC RAM Description The TC55V328AJ is a 262,144 bits high speed static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 3.3-volt supply. Toshiba’s CMOS technology and advanced circuit form pro­

TC5816AFT

Abstract: toshiba NAND ID code d33 02C
Contextual Info: TOSHIBA TC 5816A FT PRELIMINARY 16Mbit 2M x 8 BIT CMOS NAND EEPROM Description The TC 5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a 264 byte static register

Contextual Info: TOSHIBA TC74VH C540,541F/FW/FS/FT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC540F, TC74VHC540FW, TC74VHC540FS, TC74VHC540FT TC74VHC541F, TC74VHC541FW, TC74VHC541 FS, TC74VHC541FT OCTAL BUS BUFFER TC74VHC540 F / F W / FS/ FT INVERTED. 3 - STATE OUTPUTS