MS-026D
Abstract: as5sp128k32dq
Text: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable
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AS5SP128K36
MS-026D
as5sp128k32dq
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tcd series
Abstract: TCD41E2A335M tcd41e2a United Chemi-Con TCD TCD41E1E TCD30E2E104M United CHEMI-CON
Text: TCD MULTIL AYER CERAMIC TCD Series Ⅲ Y5U Ceramic Ⅲ Radial Lead Ⅲ High CV Ⅲ 125؇C Maximum Temperature Actual Size The TCD series are radial lead ceramic capacitors from UCC/NCC. These capacitors have a very low ESR and impedance which makes these capacitors ideal for filtering switching power supplies and
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250VDC
TCD41E2A335M
TCD61E2A336M
TCD41E2E684M
TCD61E2E685M
tcd series
tcd41e2a
United Chemi-Con TCD
TCD41E1E
TCD30E2E104M
United CHEMI-CON
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PDF
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United Chemi-Con TCD
Abstract: TCD41E1H685M tcd series TCD21E2A104M jis-c-0805 TCD41E2A335M United Chemi-Con catalogue United Chemi-Con series United Chemi-Con tcd series United Chemi-Con
Text: TCD MULTIL AYER CERAMIC TCD Series Ⅲ Y5U Ceramic Ⅲ Radial Lead Ⅲ High CV Ⅲ 125؇C Maximum Temperature Actual Size The TCD series are radial lead ceramic capacitors from UCC/NCC. These capacitors have a very low ESR and impedance which makes these capacitors ideal for filtering switching power supplies and
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250VDC
TCD41E2A335M
TCD41E2E684M
TCD61E2E685M
United Chemi-Con TCD
TCD41E1H685M
tcd series
TCD21E2A104M
jis-c-0805
TCD41E2A335M
United Chemi-Con catalogue
United Chemi-Con series
United Chemi-Con tcd series
United Chemi-Con
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GemPC410-FD
Abstract: vogt "iso 7816-1" Sub-D 9-pol gempc410 ISO7816-kompatiblen
Text: Chipkartenleser und -schreiber TCD-410-FD-CHIP-R/W-RS232 Chipkarten-Schreib-/Lesegerät als PC-Einbaumodul Hervorragende Eigenschaften: GemCore Chipset Vom Marktführer im Bereich Chipkartentechnologie Bestens geeignet zum Einbau in den 3,5 Zoll-Laufwerksschacht des PC
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TCD-410-FD-CHIP-R/W-RS232
ISO7816-kompatiblen
89/336/CEE
89/336/EEC
73/23/EEC
CD9004
D-08233
GemPC410-FD
0800-tastatur
GemPC410-FD
vogt
"iso 7816-1"
Sub-D 9-pol
gempc410
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PDF
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Untitled
Abstract: No abstract text available
Text: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75
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K7N403601M
K7N401801M
128Kx36
256Kx18
256Kx18-Bit
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K7N401801M
Abstract: K7N403601M
Text: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75
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K7N403601M
K7N401801M
128Kx36
256Kx18
256Kx18-Bit
K7N401801M
K7N403601M
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PDF
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K7N401801M
Abstract: K7N403601M
Text: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75
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K7N403601M
K7N401801M
128Kx36
256Kx18
256Kx18-Bit
K7N401801M
K7N403601M
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PDF
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KM718V849
Abstract: KM736V749
Text: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75
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KM736V749
KM718V849
128Kx36
256Kx18
256Kx18-Bit
KM718V849
KM736V749
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PDF
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Untitled
Abstract: No abstract text available
Text: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
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K7M403625M
K7M401825M
128Kx36
256Kx18
256Kx18-Bit
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transistor w2d
Abstract: ADV748
Text: COTS PEM AS5SP1M18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address
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AS5SP1M18DQ
200Mhz
166Mhz
133Mhz
MS026-D/BHA
transistor w2d
ADV748
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PDF
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Untitled
Abstract: No abstract text available
Text: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
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K7M403625M
K7M401825M
128Kx36
256Kx18
256Kx18-Bit
1999E
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
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KM736V747
KM718V847
128Kx36
256Kx18
256Kx18-Bit
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
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KM736V747
KM718V847
128Kx36
256Kx18
256Kx18-Bit
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PDF
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KM718V849
Abstract: KM736V749
Text: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75
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KM736V749
KM718V849
128Kx36
256Kx18
256Kx18-Bit
KM718V849
KM736V749
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
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KM736V747
KM718V847
128Kx36
256Kx18
256Kx18-Bit
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PDF
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part no w2d 48
Abstract: No abstract text available
Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.3 09/11 BURST CNTL. Address Registers Row Decode
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AS5SP128K36
AS5SP128K36
part no w2d 48
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Untitled
Abstract: No abstract text available
Text: TO SH IBA _ TOSHIBA CCD LINEAR IMAGE SENSOR TCD 1502D CCD Charge Coupled Device TCD1 5 0 2 D The TCD1502D is a high sensitive and low dark current 5000 elements CCD image sensor. The sensor is designed for facsimile, imagescanner and
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1502D
TCD1502D
400DPI)
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SSRAM
Abstract: AS5SP128K36
Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.6 10/13 BURST CNTL. Address Registers Row Decode
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133Mhz
AS5SP128K36
A95mA
SSRAM
AS5SP128K36
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V747 KM718V847 128Kx36 & 256KX18 Flow-Through N/RAM Document Tills 128Kx36 & 256Kx18-Bit Flow Through N/RAM™ Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Prelim inary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
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OCR Scan
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KM736V747
KM718V847
128Kx36
256KX18
256Kx18-Bit
718V847
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V747 KM718V847 128Kx36 & 256KX18 Flow-Through N/RAM Document Tills 128Kx36 & 256Kx18-Bit Flow Through N/RAM™ Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Prelim inary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8
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OCR Scan
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KM736V747
KM718V847
128Kx36
256KX18
256Kx18-Bit
100-T
-1420A
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PDF
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transistor w2d
Abstract: No abstract text available
Text: COTS PEM AS5SP512K18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode
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AS5SP512K18DQ
MS026-D/BHA
transistor w2d
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Untitled
Abstract: No abstract text available
Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0
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AS5SP256K36DQ
MS026-D/BHA
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transistor w2d
Abstract: transistor w2a 1050C 850C
Text: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array
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AS5SP512K36DQ
MS026-D/BHA
transistor w2d
transistor w2a
1050C
850C
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transistor w2d
Abstract: AS5SP128K36DQ
Text: COTS PEM AS5SP128K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array
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AS5SP128K36DQ
200Mhz
166Mhz
133Mhz
MS026-D/BHA
transistor w2d
AS5SP128K36DQ
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