TCA 315 A Search Results

TCA315A

Abstract: TCA 325 A tca325 tca322 TCA325A tca315
Contextual Info: 47E » • SIEMENS 023Sb05 0034734 T « S I E G SIEMENS AKTIEN6ESELLSCHAF T ' 1 ^ 5 3 Comparators with Darlington Input TTL-Compatible TCA 312 TCA 315 Features Bipolar 1C • • • • • • • • 2 Very high input resistance Large control range High output current

TCA 325 A

Abstract: TCA315A TCA315 tca325a tca 315 TCA 315 a Tca325 TCA312A TCA312 TCA 325
Contextual Info: Comparators with Darlington Input TTL-Compatible TCA 312 TCA315 Features Bipolar 1C 2 • • • • • • • • Very high input resistance Large control range High output current Low output saturation voltage W ide tem perature range TCA 312 A; G NPN input

ON5234,118

Abstract: TCP103K
Contextual Info: Ceramic Disc Capacitors - CCD/TCA/TCD/TCL/TCP/TCO/TCV GENERAL SPECIFICATIONS Arco Ceramic Disc Capacitors are designed for applications requiring high capacitance and low power factors from 12 to 1000 volts. All units are coated with a rugged “Durez” coating and are available in a variety of

tca 335 A

Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range

Contextual Info: bOE D I fl235b05 QD5G42Ô 7b7 SIEMENS S IC K N S ISIEG A K 7 -iE N 6 e LLSC H AF Dual Power Operational Amplifier TCA 2465 Bipolar 1C Features • High output peak current of twice 2.5 A • Twice 2.0 A output peak current for TCA 2465 G • Large supply voltage range up to 42 V

TCL103K

Abstract: YST 501 CCD391 arco ceramic disc capacitors JS84 TCA223Z TCA104Z S3113 tcl tv ic
Contextual Info: Ceramic Disc Capacitors - CCD/TCA/TCD/TCL/TCP/TCO/TCV GENERAL SPECIFICATIONS Arco Ceramic Disc Capacitors are designed for applications requiring high capacitance and low power factors from 12 to 1000 volts. All units are coated with a rugged “Durez” coating and are available in a variety of

000read

Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85R256HPF

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

z5v cap

Abstract: Arco 315 TCD103Z arco arco capacitors TCD683Z TCD103M z5u .05 Z5U diode TCD102Z
Contextual Info: Welcome to Arco Electronics! Page 1 of 2 ARCO Product Line I Mica I Ceramic I Film I Tantalum I Filters I I Product Line by Part Number Prefix Contact & Distribution I Contact Information I Distributors by Area I Distributor Pric Quotes & Orders I Request for Quote I Purchase Orders

TCA104Z

Abstract: TCL103K TCD153M TCD050D z5v cap TCA103K
Contextual Info: Ceramic Disc Capacitors - TCA/TCD/TCL/TCO Class III - Low Voltage Barrier Capacitors 12WVDC C a p. M fd T yp e Inches mm T o le ra n c e TC M ax. D a M ax. T h ic k n e s s 16 WVDC L ea d S p a ce Cap. M fd. a T o le ra n c e TC M ax Dia M a x. T h ic k n e s s

MB85R256s

Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256 MB85R256PF MB85R256PFTN FUJITSU FRAM TCA 150
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-4E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85R256HPF-G-BNDAE1

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-5E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85R256F

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

BOITIER MU86

Abstract: CG3-22-10F fast thyristor 200A 320F DT3100F DT3120F DT380F 800DT OT31 10MSA
Contextual Info: THYRISTORS RAPIDES A GACHETTE AMPLIFICATRICE "DAR LISTO R" . am plifying gate fast sw itching thyristors " DARLISTOR Valeurs limites Absolute max. ratings. V DWM TY PES 315 A eff rms 345 A eff (rms) / CG3-22- 2F CG3-22- 4F CG3-22- 6F CG3-22- 8F CG3-22-10F

Contextual Info: te s SLOTTED OPTICAL SWITCH DPTDELECTROHICS CNY29 J 11 PACKAGE DIMENSIONS SYMBOL r-°T M ILLIM ETER S M IN. t r 3 - i* > r L b’ SECTIO N X - X T IN C H E S MIN. 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119 .125 .024 .030 a 2 b, D D, d2 e2

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85R256FPF

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

433 315 MHz RF Transmitter

Abstract: 13.5672 315 MHz crystal controlled transmitter 433 MHz fsk encoder remote control encoder 433 MHz 433 315 MHz RF Receiver 169 MHz RF CHIP 433/315 MHz RF Transmitter ISM868 sin/cos encoder Texas
Contextual Info: ASCell3911 ISM 868 MHz, 433 MHz and 315 MHz FSK Transmitter Preliminary Data Sheet ISM 868 MHz, 433 MHz and 315 MHz FSK Transmitter – Preliminary Data Sheet ASCell3911 Austria Mikro Systeme International AG Key Features • • • • • • • • •

GM71C4400BJ

Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a

M 3211

Abstract: Rapa SP-3211 SP3211
Contextual Info: ANALOG DEVICES High Speed 64-Bit IEEE Floating-Point Multiplier ADSP-3211 1.1 Scope. This specification covers the detail requirements for a CMOS monolithic 32-bit and 64-bit IEEE Standard 754 format floating-point multiplier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows: