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    AE-POWER

    Abstract: TC3967
    Text: TC3967 REV2_20080516 2 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 13dB Typical Linear Power Gain at 2.45GHz • • • High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 15V


    Original     		PDF TC3967 45GHz TC3967 TC1601N AE-POWER

    TC3967

    Abstract: 2w, GaAs FET thermal conductivity ceramic FET
    Text: TC3967 REV.1_04/27/2005 2W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 12.5dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 43 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 15V


    Original     		PDF TC3967 45GHz TC3967 TC1601N 2w, GaAs FET thermal conductivity ceramic FET