Untitled
Abstract: No abstract text available
Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4069DPbF
IRGP4069D-EPbF
O-247AD
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IRGP4069D
Abstract: irgp4069dpbf
Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA
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IRGP4069DPbF
IRGP4069D-EPbF
O-247AD
IRGP4069D
irgp4069dpbf
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PDF
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RR350
Abstract: S100-200
Text: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA
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IRGP4069DPbF
IRGP4069D-EPbF
O-247AD
RR350
S100-200
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PDF
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DSAQ
Abstract: No abstract text available
Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4069PbF
IRGP4069-EPbF
O-247AD
DSAQ
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PDF
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IRGP4069-EPbF
Abstract: IRGP4069PbF transistor* igbt 70A 300 V
Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4069PbF
IRGP4069-EPbF
O-247AD
IRGP4069-EPbF
IRGP4069PbF
transistor* igbt 70A 300 V
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PDF
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IRGP4069-EPbF
Abstract: No abstract text available
Text: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM
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IRGP4069PbF
IRGP4069-EPbF
O-247AD
IRGP4069-EPbF
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PDF
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IRFH5020
Abstract: No abstract text available
Text: PD -97428B IRFH5020PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 200 V 55 mΩ 36 1.9 nC Ω 34 A PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications
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-97428B
IRFH5020PbF
IRFH5020
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Untitled
Abstract: No abstract text available
Text: PD -97428A IRFH5020PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 200 V 55 mΩ 36 1.9 nC Ω 34 A PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
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-97428A
IRFH5020PbF
IRFH5020TRPBF
IRFH5020TR2PBF
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PDF
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IRFH5020PbF
Abstract: AN-1154 IRFH5020TR2PBF IRFH5020TRPBF IRFH5020 PQFN footprint
Text: PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS on max 55 m 36 1.9 nC 43 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications
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IRFH5020PbF
IRFH5020PbF
AN-1154
IRFH5020TR2PBF
IRFH5020TRPBF
IRFH5020
PQFN footprint
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97429 IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC)
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IRFH5306PbF
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Untitled
Abstract: No abstract text available
Text: PD - 97429 IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features
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IRFH5306PbF
IRFH5306TRPBF
IRFH5306TR2PBF
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PDF
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IRFH5306TR2PBF
Abstract: IRFH5306PBF IRFH5306TRPBF IRFH5306 AN-1154
Text: PD - 97429 IRFH5306PbF HEXFET Power MOSFET VDS 30 V 8.1 mΩ nC RG typical 7.8 1.4 ID 44 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features
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IRFH5306PbF
IRFH5306TRPBF
IRFH5306TR2PBF
IRFH5306TR2PBF
IRFH5306PBF
IRFH5306TRPBF
IRFH5306
AN-1154
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AOZ1022DIL
Abstract: 22-A115-A JESD A114 84-3J AOZ1360AIL 2P3M UMC A115A DFN 4X4 AOZ1360DI 2P3M
Text: AOS Semiconductor Product Reliability Report AOZ1360AIL/DIL, rev 3 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 26, 2009 1 This AOS product reliability report summarizes the qualification result for AOZ1360AI/AIL (SO8
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AOZ1360AIL/DIL,
AOZ1360AI/AIL
AOZ1360DI/DIL
AOZ1360AI/AIL
AOZ1360DI/DIL
AOZ1022DIL
PQ-01143C)
AOZ1360AIL
AOZ1360DIL
-105D
22-A115-A
JESD A114
84-3J
2P3M UMC
A115A
DFN 4X4
AOZ1360DI
2P3M
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IRFH7911
Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
Text: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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7427A
IRFH7911PbF
IRFH7911
IRFH7911TRPBF
W5337
AN1152
FET MARKING CODE
FET MARKING QG
marking JE FET
PQFN footprint
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IRFH7911TRPBF
Abstract: No abstract text available
Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' 1& * 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters
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97427D
IRFH7911PbF
IRFH7911TRPBF
IRFH7911TR2PBF
x5/2011
AN-1152
AN-1136
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' * 1& 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters
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97427D
IRFH7911PbF
AN-1152
AN-1136
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PDF
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IRFH7911TRPBF
Abstract: No abstract text available
Text: PD - 97427B IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits
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97427B
IRFH7911PbF
IRFH7911TRPBF
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AN1152
Abstract: No abstract text available
Text: PD - 97427C IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) : Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits
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97427C
IRFH7911PbF
IRFH7911TRPBF
IRFH7911TR2PBF
PQ5/2011
AN-1152
AN-1136
AN1152
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awm STYLE 2919 COMPUTER CABLE 30V
Abstract: Belden AWM 2464 24 awg rs422 belden 9844 cable COMPUTER CABLE STYLE 2919 30V awm 2460 Belden Wire 8760 9460 Belden belden cables 9841 AWM STYLE 2919 low voltage COMPUTER CABLE awg 2464 28 awg 80 c 300v vw-1
Text: 5.1 Paired Cables Table of Contents 5 Paired Cables Introduction Selection Guide: Shielded Multi-pair Computer Cables Unshielded Telephone Cables Audio, Control and Instrumentation Cables Overall Beldfoil Shield Cable Characteristics: Attenuation, Rise Time, Bit Rate
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transistor c5578
Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012
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MCAT-2003
transistor c5578
BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6
awm style 20233
7700A transformer
Belden 138777
awm 2464 vw-1 300v shield cable specification
transistor nec 8772
yokogawa DCS
finder type 81.11
C5611 Transistor
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h9910
Abstract: 74FST163245 B897 PL84 K2837 9806 h9910 datasheet ipc 9850 pj 899 diode JEDEC-22-A113-A
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:
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61245L
63344N
K26795
A17844
A17838
7280Q
D01802
43574K
42646H
h9910
74FST163245
B897
PL84
K2837
9806
h9910 datasheet
ipc 9850
pj 899 diode
JEDEC-22-A113-A
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K2837
Abstract: h9910 pj 899 diode l9845 k1917 B897 74100 ipc 9850 74FST163245 L9726
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:
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61245L
63344N
K26795
A17844
A17838
7280Q
D01802
43574K
42646H
K2837
h9910
pj 899 diode
l9845
k1917
B897
74100
ipc 9850
74FST163245
L9726
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PDF
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pj 899 diode
Abstract: B897 K9814 k1917 JESD22-B100 B953 L9833 N9808 P9812 9806
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1999 TABLE OF CONTENTS Section I: Introduction Section II:
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723612Z
71215Y
72225S
2211W
Y10648
Y10746
Y10662
T11844
61823N
pj 899 diode
B897
K9814
k1917
JESD22-B100
B953
L9833
N9808
P9812
9806
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h9910
Abstract: h9940 L9939 z9939 l9923 hyundai 9734 ram K9930 l9934 733W K2837
Text: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS January 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT January 2000 TABLE OF CONTENTS Section I: Introduction Section II:
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PN100
PN120
72V3670Z
70V261Z
723631Z
Y12526
H64413
Y12663G
7130S
71215Y
h9910
h9940
L9939
z9939
l9923
hyundai 9734 ram
K9930
l9934
733W
K2837
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