Hitachi DSA002713
Abstract: No abstract text available
Text: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÕs organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.
|
Original
|
HN58S256A
32-kword
ADE-203-692B
32768word
64-byte
Hitachi DSA002713
|
PDF
|
d 1555
Abstract: Hitachi DSA00164
Text: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-670 Z Preliminary - Rev. 0.1 Mar. 13, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It has realized high speed, low power consumption and reliability by employing advanced MNOS
|
Original
|
HN58S65AI
8192-word
ADE-203-670
64-byte
d 1555
Hitachi DSA00164
|
PDF
|
Hitachi DSA00171
Abstract: No abstract text available
Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-691 Z Preliminary Rev. 0.1 Mar. 13, 1997 Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
|
Original
|
HN58S65A
8192-word
ADE-203-691
64-byte
Hitachi DSA00171
|
PDF
|
HN58V65A
Abstract: HN58V65AI HN58V65API-10 HN58V65A-SR HN58V66A HN58V66AI HN58V66A-SR
Text: HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 64k EEPROM 8-kword x 8-bit Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version REJ03C0153-0300Z (Previous ADE-203-759B(Z) Rev.2.0) Rev. 3.00 Feb.02.2004 Description
|
Original
|
HN58V65AI
HN58V66AI
HN58V65A-SR
HN58V66A-SR
HN58V66A)
REJ03C0153-0300Z
ADE-203-759B
HN58V65A
HN58V66A
8192-word
HN58V65API-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet HN58C256AI Series 256k EEPROM 32-kword x 8-bit R10DS0218EJ0100 Rev.1.00 Oct 07, 2013 Description Renesas Electronics' HN58C256AI are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS memory
|
Original
|
HN58C256AI
32-kword
R10DS0218EJ0100
32768-word
64-byte
ns/100
|
PDF
|
marking code R2C
Abstract: No abstract text available
Text: NCV7518 FLEXMOS] Hex Low-side MOSFET Pre‐driver The NCV7518 programmable six channel low-side MOSFET pre-driver is one of a family of FLEXMOS automotive grade products for driving logic-level MOSFETs. The product is controllable by a combination of serial SPI and parallel inputs. The device offers 3.3 V/
|
Original
|
NCV7518
NCV7518
NCV7518/D
marking code R2C
|
PDF
|
Hitachi DSA00171
Abstract: No abstract text available
Text: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-028F Z Rev. 6.0 Apr. 8, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word × 8-bit. It has realized high speed, low power consumption and high
|
Original
|
HN58C1001
131072-word
ADE-203-028F
128-byte
HN58C1001R
TFP-32DAR)
Hitachi DSA00171
|
PDF
|
MC33174
Abstract: 33174 MC33174N MC35174
Text: MC33174 - MC35174 LOW POWER QUAD BIPOLAR OPERATIONAL AMPLIFIERS GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA/Amp FOR 2.1MHz, 2V/µs SINGLE OR DUAL SUPPLY OPERATION FROM +4V TO +44V (±2V TO ±22V) WIDE INPUT COMMON MODE VOLTAGE RANGE INCLUDING VCCLOW LEVEL OUTPUT VOLTAGE CLOSE TO
|
Original
|
MC33174
MC35174
100mV
DIP14
33174
MC33174N
MC35174
|
PDF
|
Intel 82430
Abstract: 82430 D478 3731 61 7MPV6294
Text: 512KB SECONDARY CACHE MODULES FOR THE INTEL PENTIUM CPU AND INTEL 82430 FAMILY CORE LOGIC PCISETS Integrated Device Technology, Inc. PRELIMINARY IDT7MPV6293 IDT7MPV6294 FEATURES DESCRIPTION • For Intel Pentium CPU-based systems using the Intel 82430 family core logic PCIsets
|
Original
|
512KB
IDT7MPV6293
IDT7MPV6294
CELP2X80SCXXXX
66MHz
7MPV6294SA66M
IDT7MPV6293/94
7MPV6293
7MPV6294
Intel 82430
82430
D478
3731 61
|
PDF
|
Hitachi DSA002750
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function ADE-203-314G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
|
Original
|
HN58V1001
128-kword
ADE-203-314G
131072-word
128-byte
HN58V1001R
TFP-32DAR)
FP-32D,
TFP-32DA
Hitachi DSA002750
|
PDF
|
HN58C256A
Abstract: HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 Hitachi DSA00358
Text: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by
|
Original
|
HN58C256A
HN58C257A
32-kword
HN58C257A)
ADE-203-410D
32768-word
64-byte
ns/100
HN58C256AFP-10
HN58C256AFP-85
HN58C256AP-10
HN58C256AP-85
HN58C256AT-10
HN58C256AT-85
HN58C257AT-85
Hitachi DSA00358
|
PDF
|
33171
Abstract: mc33171n MC33171 MC35171
Text: MC33171 - MC35171 LOW POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIERS . . . . . GOOD CONSUMPTION/SPEED RATIO : ONLY 200µA FOR 2.1MHz, 2V/µs SINGLE OR DUAL SUPPLY OPERATION FROM +4V TO +44V (±2V TO ±22V) WIDE INPUT COMMON MODE VOLTAGE RANGE INCLUDING VCCLOW LEVEL OUTPUT VOLTAGE CLOSE TO
|
Original
|
MC33171
MC35171
100mV
MC33171
33171
mc33171n
MC35171
|
PDF
|
HN58V256A
Abstract: HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12 Hitachi DSA00358
Text: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability by
|
Original
|
HN58V256A
HN58V257A
32-kword
HN58V257A)
ADE-203-357D
32768-word
64-byte
D-85622
HN58V256AFP-12
HN58V256AT-12
HN58V257AT-12
Hitachi DSA00358
|
PDF
|
cell parts list
Abstract: 12E19
Text: Chapter 4: Tables 4 Preview of Tables. 68 Overview of Steps in Generating a Table. 69 Setting Up the Table Parameters . 70
|
Original
|
9204ENG
cell parts list
12E19
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 64k EEPROM 8-kword x 8-bit Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version REJ03C0153-0300Z (Previous ADE-203-759B(Z) Rev.2.0) Rev. 3.00 Feb.02.2004 Description
|
Original
|
HN58V65AI
HN58V66AI
HN58V65A-SR
HN58V66A-SR
HN58V66A)
REJ03C0153-0300Z
ADE-203-759B
HN58V65A
HN58V66A
8192-word
|
PDF
|
IDT29FCT2052T
Abstract: IDT29FCT52T
Text: IDT29FCT52AT/BT/CT/DT IDT29FCT2052AT/BT/CT FAST CMOS OCTAL REGISTERED TRANSCEIVERS Integrated Device Technology, Inc. FEATURES: • Common features: – Low input and output leakage ≤1µA max. – Extended commercial range of –40°C to +85°C – CMOS power levels
|
Original
|
IDT29FCT52AT/BT/CT/DT
IDT29FCT2052AT/BT/CT
MIL-STD-883,
FCT29FCT52T:
-15mA
IDT29FCT52AT/BT/CT/DT,
IDT29FCT/2052AT/BT/CT
29FCT
IDT29FCT2052T
IDT29FCT52T
|
PDF
|
LEY9
Abstract: No abstract text available
Text: IDT54/74FCT841A/B/C HIGH-PERFORMANCE CMOS BUS INTERFACE LATCHES Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Equivalent to AMD’s Am29841-46 bipolar registers in pinout/function, speed and output drive over full temperature and voltage supply extremes
|
Original
|
IDT54/74FCT841A/B/C
Am29841-46
IDT54/74FCT841A
IDT54/74FCT841B
IDT54/74FCT841C
MIL-STD-883,
10-Bit
LEY9
|
PDF
|
diode A04 B14
Abstract: FST1632384 FST163384 IDT74FST1632384 IDT74FST163384 B1014
Text: IDT74FST163384 IDT74FST1632384 ADVANCE INFORMATION 20-BIT BUS SWITCH Integrated Device Technology, Inc. current sink or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external driver. These devices connect input and output
|
Original
|
IDT74FST163384
IDT74FST1632384
20-BIT
IDT74FST163384,
SO48-1)
SO48-2)
SO48-3)
diode A04 B14
FST1632384
FST163384
IDT74FST1632384
IDT74FST163384
B1014
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE D • 44 47 50 4 D D 10 0D Ö Tbl « H P A HEWLETT What WL'EM PACKARD Silicon Bipolar MMIC 3.5 and 5.5 GHz Divide-by-4 Static Prescalers Technical Data 100 mil Stripline Package Features • Wide Operating Frequency Range: IFD-53010: 0.15 to 5.5 GHz
|
OCR Scan
|
IFD-53010:
IFD-53110:
IFD-53010
IFD-53110
IFD-53110
IFD-53010
IFD-53110.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AUER P H I L I P S m S C R E T E bRE » • bbS 3 R 31 0 0 3 7 DD 3 Tbl * A P X Philips Semiconductors Product specification VHF variable capacitance diode DESCRIPTION BB911A QUICK REFERENCE DATA The BB911A is a silicon variable capacitance diode in planar
|
OCR Scan
|
BB911A
BB911A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. ADVANCE INFORMATION IDT54/74FBT240 IDT54/74FBT240A IDT54/74FBT240C HIGH-SPEED BiCMOS OCTAL BUFFER/LINE DRIVER FEATURES: DESCRIPTION: • IDT54/74FBT240 equivalent to 54/74BCT240 The FBT series of BiCMOS Octal Buffers and Line Drivers
|
OCR Scan
|
IDT54/74FBT240
IDT54/74FBT240A
IDT54/74FBT240C
IDT54/74FBT240
54/74BCT240
200mV
IDT54/74FBT240A
IDT54/74FBT240/A/C
MIL-STD-883,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HIGH-PERFORMANCE CMOS BUFFERS IDT54/74FCT827A 1DT54/74FCT827B IDT54/74FCT827C Integrated Device Technology» Inc, FEATURES: DESCRIPTION: • Faster than AM D's Am29827 series • Equivalent to AM D’s Am29827 bipolar buffers in pinout/ function, speed and output drive over full temperature
|
OCR Scan
|
IDT54/74FCT827A
1DT54/74FCT827B
IDT54/74FCT827C
Am29827
IDT54/74FCT827A
IDT54/74FCT800
IDT54/74FCT827A/B/C
10-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION IDT54/74FBT245 IDT54/74FBT245A IDT54/74FBT245C HIGH-SPEED BiCMOS NON-INVERTING BUFFER TRANSCEIVER In tegrated D evice T ech n o lo gy, Inc« FEATURES: DESCRIPTION: • • • • The FBT series of BiCMOS Buffer Transceivers are built using advanced BiCEMOS , a dual metal BiCMOS
|
OCR Scan
|
IDT54/74FBT245
IDT54/74FBT245A
IDT54/74FBT245C
IDT54/74FBT245
IDT54/74FBT245/A
|
PDF
|
7605 voltage regulator
Abstract: No abstract text available
Text: SCS-THOMSON [ffl« Q m iI g ¥ M « § T E A 7605 LOW-DROP VOLTAGE REGULATOR • Vo = 5V ± 4 % (l0 = 5mA ■ los S 500mA » Vi - Vo < 0.6 V (lo = 500mA) • V| (surge) = — 80V » THERMAL AND SHORT-CIRCUIT PROTECTION PIN CONNECTIONS rc n GND 1 = v, 2 = V0
|
OCR Scan
|
500mA
500mA)
TEA7605
TEA7605
150mA
QDSlb20
7605 voltage regulator
|
PDF
|
