RRQ2
Abstract: AD10 AD11 AD12 CRC-10 CRC-32 3583H "network interface cards"
Text: ICs for Communications Segmentation and Reassembly Element SARE PXB 4110 Version 1.1 Preliminary Data Sheet 01.97 T4110-XV11-P2-7600 PXB 4110 Revision History: Current Version: 01.97 Previous Version: Preliminary Data Sheet 08.95 Version 1.1 Page (in previous
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T4110-XV11-P2-7600
P-FQFP-208-2
P-FQFP-208-4.
RRQ2
AD10
AD11
AD12
CRC-10
CRC-32
3583H
"network interface cards"
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2N174
Abstract: No abstract text available
Text: TELEPHONE: 973 370-2022 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N174 POWER TRANSISTOR GENERAL DESCRIPTION DIMENSIONS AND C O N N E C T I O N S The 2N174 is a PKP germanium power transistor designed for general use with a 28
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2N174
2N174
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free transistor and ic equivalent data
Abstract: free transistor Germanium Amplifier Circuit diagram germanium transistors NPN k2a2 GERMANIUM TRANSISTOR silicon bipolar transistor low noise amplifier Germanium Amplifier silicon germanium germanium NPN
Text: BASESTATIONS / WIRELESS INFRASTRUCTURE WIRELESS, RF, AND CABLE Mar 15, 2000 Silicon Germanium SiGe Technology Enhances Radio Front-End Performance This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is
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MAX2644:
MAX2645:
MAX2648:
MAX2649:
MAX2651:
MAX2654:
MAX2680:
MAX2683:
MAX3273:
MAX3892:
free transistor and ic equivalent data
free transistor
Germanium Amplifier Circuit diagram
germanium transistors NPN
k2a2
GERMANIUM TRANSISTOR
silicon bipolar transistor low noise amplifier
Germanium Amplifier
silicon germanium
germanium NPN
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toshiba sb-500
Abstract: 2SC387A 387AG ISS simbol CC335 2sc 200mhz 2.T transistor planar
Text: ^j3yNPNx^5>^ì/j> by\^-tB^yv^9 2s c 387Ag SILICON NPN EPITAXIAL PLANAR TRANSISTOR i# te ffi O VHF » o uhf * 56 m m INDUSTRIAL APPLICATIONS Unit in mm o VHF Amplifier Applications o UHF Oscillator Applications h =? v y a y IS $. S i * ' ¡5 V ' o f T = 1000MHz Typ. )
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1000MHz
95MAX.
2sc387AÂ
387AG
toshiba sb-500
2SC387A
387AG
ISS simbol
CC335
2sc 200mhz
2.T transistor planar
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2SC394
Abstract: TRANSISTOR 2SC394 2SC394-0 2SC394-R 100MHZ 251C HSE2 Produced by Perfect Crystal Device Technology 2SC394 transistor
Text: S/UD>NPNZm«0Bh5:VS>;*5KPCT75iW 2SC 394 1ILIC0N NPN DOUBLE DIFFUSED TRANSISTOR PCT PROCESS o mmwLmmm o High Frequency Amplifier Applications Unit in mm 0 5.8 MAX. 0 4 . 9 5 MAX. o PM Frequency Converter Applications 3E& => ^ * # * * ftzk S w ; ^Q 4 5 # o b = 9 “U
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2sc394
100MHz)
200MHz
j2f58MAX.
95MAJ(
100MHz
2SC394
TRANSISTOR 2SC394
2SC394-0
2SC394-R
251C
HSE2
Produced by Perfect Crystal Device Technology
2SC394 transistor
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harris uart hd3-6402
Abstract: No abstract text available
Text: 33 HARRIS HD-6402 CMOS Universal Asynchronous Receiver Transmitter (UART January 1992 F ea tu res D es crip tio n • 8.0M H z O p e ra tin g F re q u e n c y (H D -6 4 0 2 B ) The H D -6 4 0 2 is a CMOS UART for interfacing com puters or microprocessors to an asynchronous serial data channel.
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HD-6402
harris uart hd3-6402
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Untitled
Abstract: No abstract text available
Text: DISTINCTIVE CHARACTERISTICS Supports High-speed Source Routing or Source Routing Transparent Bridging for up to eight ports • Automatically selects Source Routed or Transparent filtering routines based on Transceiver output data, and supplies the proper Match, Fail, or Flush signals to the
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MU9C1480
MU9C8148s
63-2-815-8536x6201
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tb 2926
Abstract: Lb 598 d 2926S 2sc2926s
Text: h -7 > v Z. $ / T ransistors 2SC2926/2SC2926S 2SC 2926 2SC 2926S v ' j u > h Epitaxial Planar NPN Silicon Transistors Amplifier • fl- J K ^ jiH /D im e n s io n s U n it: mm 1) f T * ''iS t 'o 4 ± 0. ? 2.0 £ 0.2 2SC 2926S• 2SC 2926 f j = 1 . 1 G H z (Typ.)
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2SC2926/2SC2926S
2926S
SC-43
tb 2926
Lb 598 d
2926S
2sc2926s
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Untitled
Abstract: No abstract text available
Text: DH aHBSbOS 00Ö1403 241 SIEMENS PROFET BTS 432 D2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 V'Load dump Clamp of negative voltage at output 58 Vbb- V 'o u t Avalanche Clamp
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Segmentation and Reassembly Element SARE PXB 4110 Version 1.1 Preliminary Data Sheet 01.97 T 4 1 10 -X V 1 1-P 2-76 00 PXB 4110 Revision History: Current Version: 01.97 Previous Version: Preliminary Data Sheet 08.95 Version 1.1
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P-FQFP-208-2
P-FQFP-208-4.
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2SD786
Abstract: 2SD786(S)
Text: h 7 > y X $ / T ransistors 2SD786 2SD786S 2SD786/2SD786S h 7 > y X ^ r I t l $ * ' > 7 J l ' 7 0U - j - M N P N i & rb b ,‘ :iS ;a i i [lli f f l / L o w rb b ’ L o w N o is e A m p . E p ita x ia l P la n a r N P N S ilic o n T r a n s is to r s • W B \H £@ /'D im e n s io n s U n it: mm
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2SD786
2SD786S
2SD786/2SD786S
55nV/v
2SB737
2SD786,
2SB737,
2SD786
2SD786(S)
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k 2059 TRANSISTOR
Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
Text: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency
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2SC4400
2SC4400-applied
k 2059 TRANSISTOR
TRANSISTOR BI 187
2T transistor surface mount
pa 2030a
2SC4400
NPN S2e
1Ft TRANSISTOR
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TRANSISTOR SMD CODE 339
Abstract: smd zener diode code n0
Text: SIEMENS PROFET BTS430K2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • Clamp of negative voltage at output 50 Vbb-V o u t Avalanche Clamp Short-circuit protection Vbb operation 4.5 . . 32 Current limitation
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BTS430K2
Q67060-S6200-A2
O-220
E3043
BTS430K2
Q67060-S6200-A3
TRANSISTOR SMD CODE 339
smd zener diode code n0
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transistor fn 1016
Abstract: 2SA579 ZS 1032 2SA573 2SA756 2SC1004A
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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Tc-25
2SA756
transistor fn 1016
2SA579
ZS 1032
2SA573
2SC1004A
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MBC236
Abstract: fdk ct 2T23 IEC134 S028 TDA8705 TDA8705T QUADRATURE CLOCK CONVERTER
Text: IN TE G R A TE D C IR C U ITS TDA8705 6-bit high-speed dual analog-to-digital converter Preliminary specification File under Integrated Circuits, IC02 November 1994 Philips Semiconductors P H ILIP S •I 7110051, DOÛSTZB t.35 ■ This Material Copyrighted By Its Respective Manufacturer
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TDA8705
711005b
7110fl2ti
MBC236
fdk ct
2T23
IEC134
S028
TDA8705
TDA8705T
QUADRATURE CLOCK CONVERTER
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2N2422
Abstract: No abstract text available
Text: 2N2422 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2422 is a Unijunction Transistor, Designed for General Purpose Pulse, Timing, Sense and T rigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A (PULSED) m 60 V o V Ic Pd is s 360 mW @ Te $ 25 °C
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2N2422
2N2422
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2N2646
Abstract: unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package
Text: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) SO V S00 mW @ Te = 25 0C
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2N2646
1250C
unijunction transistor
2N2646 transistor
transistor 2N2646
2n2646 package
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2670 H IG H FREQUENCY AM PLIFIER APPLIC A TION S. CHARACTERISTIC SYMBOL U n i t in m m TEST CONDITION MIN. TYP. MAX. UNIT ÏCBO V CB = 35V, IE = 0 — — 0.1 /'A E m itter C ut-off C u rre n t lEBO V e b = 4V, I c = 0
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2SC2670
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2SC503
Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Text: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.
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0D0740T
80MHz
2SC503)
2SC504)
2SA503
2SA504.
2SC503
2SC504
2SC503-2SC504
2SC503/Y
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2SC503
Abstract: 2SC5031 2SC504 2SA503 2SA504
Text: TOSHIBA {DISCRETE/OPTO} 2SC503 2SC504, 9097250 TOSHIBA SILICON NPN EPITAX IA L TYPE PCT PROCESS 5 6C <D I S C R E T E / O P T O ) 07 4 U 9 Ü 7*"3 5 W 5 ' Unit in mm $9 . 3 9 Ì . 1 A X . HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING. APPLICATIONS.
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2SC5031
2SC504,
80MHz
2SC503)
2SC504)
2SA503
2SA504.
2SC503
2SC504
2SA504
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MC68341
Abstract: MC68681
Text: SECTION 7 SERIAL MODULE The MC68341 serial module is a dual universal asynchronous/synchronous receiver/transmitter that interfaces directly to the CPU32 processor via the intermodule bus IMB . The serial module, shown in Figure 7-1, consists of the following major
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MC68341
CPU32
MC68681
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2SC398
Abstract: 2SC399 IC c399 TB9.C c3982 VAAC
Text: 25C398 2 s c 399 O fn ; vhp t ^ z;'J3yNPNI.£5>*^J> l7ls-t]&^yVZ5> SILICON NPN EPITAXIAL PLANAR TRANSISTOR ffl R FifiWffl ; 8SC398 2SC3 99 Unit in mm -ê- ffl; 2 Í& 8 M A X . o TV V H F Tuner A p p l ications RF Amplifier M ixer • M m m r - r 0 4 .9 5 M A X .
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2SC398
2SC399
8SC398
200MHz)
3SC399
800MHz)
2SC399
IC c399
TB9.C
c3982
VAAC
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2SC4012
Abstract: No abstract text available
Text: h ~7 > y / Transistors 2SC3078M/2SC4012 2SC 3078M 2S C 4012 X tf$ * '> 7 J U 7 ° U - J - m N P N ' > U O > Amplifier Epitaxial Planar NPN Silicon Transistors • ÿJ-ffÿ\lii[l!l/Dimensions Unit : mm (W s = 7 .8 X 1 0 “ 5J) 2) lc = 1 0 0 m A £ * £ l ' o
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2SC3078M/2SC4012
3078M
100mA
2SC3078M/2SC4012
2SC4012
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AC128
Abstract: transistor AC128 AC128 transistor germanium transistor ac 128 valvo transistoren ac128 pnp germanium transistor ac128 ac128 germanium valvo valvo transistor
Text: NICHT FÜR N E U E N T W I C K L U N G E N AC 128 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechani sehe Daten: Gehäuse: Metall, JEDEC T0-1, 1 A 3 DIN 41 871
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AC128
transistor AC128
AC128 transistor
germanium transistor ac 128
valvo transistoren
ac128 pnp
germanium transistor ac128
ac128 germanium
valvo
valvo transistor
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