SAV-541
Abstract: SAV-551 TAV-541 tav 541 SAV-581 US marking TAV-581 TAV-551
Text: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN#09-020 NOTIFICATION DATE: November 11, 2009 MODEL(S) AFFECTED: SAV-541+, SAV-551+, SAV-581+, TAV-541+, TAV-551+, TAV-581+ EXTENT OF CHANGE: Change of device marking EFFECT OF CHANGE: Model SAV-541+ SAV-551+ SAV-581+
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D4-E000-73)
SAV-541+
SAV-551+
SAV-581+
TAV-541+
TAV-551+
TAV-581+
SAV-541
SAV-551
TAV-541
tav 541
SAV-581
US marking
TAV-581
TAV-551
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TAV-541
Abstract: No abstract text available
Text: E-PHEMT TAV-541+ Typical Performance Data IDS mA VDS (V) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90
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TAV-541+
TAV-541
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TAV-541
Abstract: tav 541
Text: E-PHEMT TAV-541+ Typical Performance Curves I-V VGS=0.1V PER STEP (2) NOISE FIGURE vs IDS @ 2 GHz (1) 120 0.8 VDS=3V 0.2V 0.7 0.3V IDS (mA) 80 0.4V 60 0.5V 40 NOISE FIGURE (dB) 100 0.6V 20 VDS=4V 0.6 0.5 0.4 0.3 0.2 0.7V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
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TAV-541+
TAV-541
tav 541
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CF50A
Abstract: CF300 MIL-R-11 100S 200S CFF RESISTORS
Text: CARBON FILM RESISTORS, 1/8 to 3 WATT RESISTORS MCAPS & COILS MDELAY LINES +.5-41-5 H Industry’s lowest cost and widest selection! H Delivery from stock in bulk or tape/reel H Excellent long-term stability, exceeds MIL-R-11 H Mini 1/4W, 1/2W, 1W models H Standard tolerance: ±5% up to 10M ±2%, ±10% avail.
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MIL-R-11
CF50S
FA004B
CF50A
CF300
MIL-R-11
100S
200S
CFF RESISTORS
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MC68360
Abstract: arbiter master C6000 SN74CBTD16211 TMS320C6000 TMS320C6202
Text: Application Report SPRA535 TMS320C6000 Expansion Bus to MC68360 Microprocessor Interface Zoran Nikolic DSP Applications Abstract This application report describes how to interface the Motorola MC68360 quad integrated communications controller QUICC to the expansion bus of the Texas Instruments (TI )
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SPRA535
TMS320C6000
MC68360
MC68360
arbiter master
C6000
SN74CBTD16211
TMS320C6202
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pd25a
Abstract: FDMS8460
Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
FDMS8460
pd25a
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Untitled
Abstract: No abstract text available
Text: FDMS8460 tm Trench N-Channel Power MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
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FDS8638
Abstract: ANS13 5680 so8
Text: FDS8638 N-Channel PowerTrench MOSFET 40 V, 18 A, 4.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDS8638
FDS8638
ANS13
5680 so8
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217a marking
Abstract: No abstract text available
Text: FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS8460
FDMS8460
217a marking
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS8333 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS8333
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Untitled
Abstract: No abstract text available
Text: FDS8638 N-Channel PowerTrench MOSFET 40 V, 18 A, 4.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDS8638
FDS8638
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Untitled
Abstract: No abstract text available
Text: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMS86255
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FDMS8460
Abstract: No abstract text available
Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max rDS on = 2.2m: at VGS = 10V, ID = 25A Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has
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FDMS8460
FDMS8460
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Untitled
Abstract: No abstract text available
Text: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 12.4 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMS86255
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MO-240
Abstract: MO-240 aa
Text: FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86152
FDMS86152
MO-240
MO-240 aa
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Untitled
Abstract: No abstract text available
Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd
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CSD17559Q5
SLPS374
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Untitled
Abstract: No abstract text available
Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd
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CSD17559Q5
SLPS374
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90G001
Abstract: omap 4460
Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd
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CSD17559Q5
SLPS374
CSD17559Q5
13-Inch
90G001
omap 4460
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CSD17559Q5
Abstract: No abstract text available
Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd
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CSD17559Q5
SLPS374
CSD17559Q5
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Untitled
Abstract: No abstract text available
Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd
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CSD17559Q5
SLPS374
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Untitled
Abstract: No abstract text available
Text: FIFO RADI Controllei t - ^ ‘läl 5 7 /6 7 4 2 1 9 002901 w Ordering Information Features/ Benefits • High-speed, no fall-through time PACKAGE PART NUMBER PINS TYPE • Control signals for data latching 574219 40 J Mil • Full, Half-Full, Empty, Almost flags for
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OCR Scan
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FIFOs--16-bit
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27c301
Abstract: 27C101 nec 27c1000 S631000 S631001 INTEL 27C101 intel 27010 eprom
Text: HDSSTlb 0013217 3 40E D GOULD INC/ GOULD A M I •> GOULD Aftll* ¡AHI 1MBit 131,072 x 8 Static CMOS Mask ROM Semiconductors S631000/S631001 Features General Description • Fast Access Time: S631000-10/S631001-10—100ns S631000-15/S631001-15—150ns S631000-20/S631001-20—200ns
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S631000/S631001
S631000-10/S631001-10--100ns
S631000-15/S631001-15--150ns
S631000-20/S631001-20--200ns
125mW
625jjW
dip--S631001
available--S631001
S631000
0D1322S
27c301
27C101
nec 27c1000
S631001
INTEL 27C101
intel 27010 eprom
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T130
Abstract: GDGD700 T130N 5x931 heatsink tv 35 5X93
Text: ELIPEC S2E T 130 N D 34035^7 Typenreihe/Type range T 130 N Elektrische Eigenschaften Electrical properties 400* 600 Höchstzulässige Werte Maximum permissible values V dRM. Vrrm Periodische Vorwärts- und repetitive peak forward off-state 800 Rückwärts-Spitzensperrspannung
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OCR Scan
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34G35T7
GDGD700
T130
T130N
5x931
heatsink tv 35
5X93
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PDF
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Untitled
Abstract: No abstract text available
Text: ELIPEC T 130 N S2E D 3 4 0 3 5 ^ 7 G D G D 7 0 0 TTb * U P E C Typenreihe/Type range T 130 N Elektrische Eigenschaften Electrical properties 400* 600 Höchstzulässige Werte Maximum permissible values V dRM. Vrrm Periodische Vorwärts- und repetitive peak forward off-state
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OCR Scan
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T-91-20
5x315
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PDF
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