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    TAS 5352 Search Results

    TAS 5352 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10143535-216KLF Amphenol Communications Solutions Minitek MicroSpace™ 1.27mm Crimp-to-Wire Connector Platform, Wire to Board Connector, Vertical, Header, Surface Mount, 16 Position,staggered, Top Latch

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    10143535-212KLF Amphenol Communications Solutions Minitek MicroSpace™ 1.27mm Crimp-to-Wire Connector Platform, Wire to Board Connector, Vertical, Header, Surface Mount, 12 Position,staggered, Top Latch

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    84535-201 Amphenol Communications Solutions 200 Position BGA Receptacle, 8mm Component Height, 1.27mm x 1.27mm Array Visit Amphenol Communications Solutions
    10143535-204KLF Amphenol Communications Solutions Minitek MicroSpace™ 1.27mm Crimp-to-Wire Connector Platform, Wire to Board Connector, Vertical, Header, Surface Mount, 4 Position,staggered, Top Latch

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    10143535-215KLF Amphenol Communications Solutions Minitek MicroSpace™ 1.27mm Crimp-to-Wire Connector Platform, Wire to Board Connector, Vertical, Header, Surface Mount, 15 Position,staggered, Top Latch

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    TAS 5352 Price and Stock

    Rochester Electronics LLC TAS5352DDVR

    AUDIO AMPLIFIER, 195W, 2 CHANNEL
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    DigiKey TAS5352DDVR Bulk 51,020 48
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    Rochester Electronics LLC TAS5352DDV

    TAS5352 - 125W STEREO DIGITAL AM
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    DigiKey TAS5352DDV Bulk 1,465 42
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    Texas Instruments TAS5352DDV6EVM

    EVAL BOARD FOR TAS5352 TAS5518
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    DigiKey TAS5352DDV6EVM Box 1 1
    • 1 $421.34
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    Texas Instruments TAS5352ADDV

    IC AMP D MONO/STER 250W 44HTSSOP
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    DigiKey TAS5352ADDV Tube 140
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    Mouser Electronics TAS5352ADDV
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    Arrow Electronics TAS5352ADDV 35 18 Weeks 35
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    Texas Instruments TAS5352DDVR

    IC AMP D MONO/STER 250W 44HTSSOP
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    DigiKey TAS5352DDVR Cut Tape 1
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    TAS5352DDVR Reel 2,000
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    TAS5352DDVR Digi-Reel 1
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    Mouser Electronics TAS5352DDVR
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    Verical TAS5352DDVR 51,020 51
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    Rochester Electronics TAS5352DDVR 51,020 1
    • 1 $6.03
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    • 100 $5.67
    • 1000 $5.13
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    TAS 5352 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TAS5352 Texas Instruments 125 W STEREO DIGITAL AMPLIFIER POWER STAGE Original PDF
    TAS5352ADDV Texas Instruments 125-W Stereo Digital Amplifier Power Stage 44-HTSSOP 0 to 70 Original PDF
    TAS5352ADDVR Texas Instruments 125-W Stereo Digital Amplifier Power Stage 44-HTSSOP 0 to 70 Original PDF
    TAS5352DDV Texas Instruments 125 W STEREO DIGITAL AMPLIFIER POWER STAGE Original PDF
    TAS5352DDV Texas Instruments 125-W Stereo Digital Amplifier Power Stage 44-HTSSOP 0 to 70 Original PDF
    TAS5352DDV Texas Instruments Linear - Amplifiers - Audio, Integrated Circuits (ICs), IC AMP AUDIO PWR 250W D 44TSSOP Original PDF
    TAS5352DDV6EVM Texas Instruments Evaluation Boards - Audio Amplifiers, Programmers, Development Systems, TAS5352DDV6EVM Original PDF
    TAS5352DDVG4 Texas Instruments 125-W Stereo Digital Amplifier Power Stage 44-HTSSOP 0 to 70 Original PDF
    TAS5352DDVG4 Texas Instruments Linear - Amplifiers - Audio, Integrated Circuits (ICs), IC AMP AUDIO PWR 250W D 44TSSOP Original PDF
    TAS5352DDVR Texas Instruments 125 W STEREO DIGITAL AMPLIFIER POWER STAGE Original PDF
    TAS5352DDVR Texas Instruments 125-W Stereo Digital Amplifier Power Stage 44-HTSSOP 0 to 70 Original PDF
    TAS5352DDVR Texas Instruments Linear - Amplifiers - Audio, Integrated Circuits (ICs), IC AMP AUDIO PWR 250W D 44TSSOP Original PDF
    TAS5352DDVRG4 Texas Instruments 125-W Stereo Digital Amplifier Power Stage 44-HTSSOP 0 to 70 Original PDF
    TAS5352DDVRG4 Texas Instruments Linear - Amplifiers - Audio, Integrated Circuits (ICs), IC AMP AUDIO PWR 250W D 44TSSOP Original PDF

    TAS 5352 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    800H

    Abstract: HN29V51211 HN29V51211T-50 Hitachi DSA00358
    Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    HN29V51211 113-sector 248-bit) ADE-203-1221 b2100 800H HN29V51211T-50 Hitachi DSA00358 PDF

    800H

    Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
    Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled


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    HN29W25611T-50H 057-sector 072-bit) ADE-203-1178A HN29W25611T 16nents 800H ADE-203-1178A HN29W25611T-50H sa 2111 Hitachi DSA00358 PDF

    O2-A2

    Abstract: sa 2111 800H HN29W25611 HN29W25611T-50 Hitachi DSA0023 Hitachi DSA00230
    Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995B (Z) Rev. 1.0 Dec. 10, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are


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    HN29W25611 057-sector 072-bit) ADE-203-995B O2-A2 sa 2111 800H HN29W25611T-50 Hitachi DSA0023 Hitachi DSA00230 PDF

    Hitachi DSA002710

    Abstract: No abstract text available
    Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995 (Z) Preliminary, Rev. 0.0 Jan. 8, 1999 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The


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    HN29W25611 057-sector 072-bit) ADE-203-995 Hitachi DSA002710 PDF

    Hitachi DSA002781

    Abstract: No abstract text available
    Text: HN29W51214S Series 512M AND type Flash Memory More than 16,057-sector 271,299,072-bit x 2 ADE-203-1155 (Z) Preliminary Rev. 0.0 Jan. 24, 2000 Description The Hitachi HN29W51214S Series is stacked 2 chips Hitachi 256-Mbit Flash memory (HN29W25611S) that


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    HN29W51214S 057-sector 072-bit) ADE-203-1155 256-Mbit HN29W25611S) HN29W25611S Hitachi DSA002781 PDF

    PD513

    Abstract: No abstract text available
    Text: HN29W6411 Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-637E (Z) Rev. 5.0 Nov. 14, 1997 Description The Hitachi HN29W6411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


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    HN29W6411 057-sector 768-bit) ADE-203-637E TTP-48/40D) PD513 PDF

    abe 433

    Abstract: HN29W6411ATT-50 Hitachi DSA00164
    Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-865DC (Z) Rev. 21.0 FebOct. 20, 19998 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


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    HN29W6411A 057-sector 768-bit) ADE-203-865DC abe 433 HN29W6411ATT-50 Hitachi DSA00164 PDF

    Hitachi DSA00174

    Abstract: No abstract text available
    Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944B (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase


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    HN29W12814A 057-sector 768-bit) ADE-203-944B 64-Mbit HN29W6411A) HN29W6411A Hitachi DSA00174 PDF

    abe 433

    Abstract: HN29W6411ATT-50 200H Hitachi DSA00480
    Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-865D (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


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    HN29W6411A 057-sector 768-bit) ADE-203-865D abe 433 HN29W6411ATT-50 200H Hitachi DSA00480 PDF

    HN29W6411ATT-50

    Abstract: O2-A2 200H D513 Hitachi DSA00196
    Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-865B (Z) Preliminary Rev. 0.2 Mar. 31, 1998 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


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    HN29W6411A 057-sector 768-bit) ADE-203-865B HN29W6411ATT-50 O2-A2 200H D513 Hitachi DSA00196 PDF

    HITEC 527

    Abstract: HN29W12814ATT-50 768-BIT Hitachi DSA00200 pd513
    Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase


    Original
    HN29W12814A 057-sector 768-bit) ADE-203-944 64-Mbit HN29W6411A) HN29W6411A HITEC 527 HN29W12814ATT-50 768-BIT Hitachi DSA00200 pd513 PDF

    Hitachi Stacked package memory

    Abstract: HN29W16814 SA Series HITEC 527 PD513 Hitachi DSA00196
    Text: HN29W16814 Series 168M AND type Flash Memory More than 21,074-sector 86,319,104-bit x 2 ADE-203-943 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W16814 Series is stacked 2 chips Hitachi 84-Mbit Flash memory (HN29W8411) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase


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    HN29W16814 074-sector 104-bit) ADE-203-943 84-Mbit HN29W8411) HN29W8411 Hitachi Stacked package memory SA Series HITEC 527 PD513 Hitachi DSA00196 PDF

    HITEC 527

    Abstract: Hitachi DSA00164
    Text: HN29W12814A Series 128M AND type Flash Memory More than 16,057-sector 67,824,768-bit x 2 ADE-203-944B (Z) Rev. 2.0 Feb. 20, 1999 Description The Hitachi HN29W12814A Series is stacked 2 chips Hitachi 64-Mbit Flash memory (HN29W6411A) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase


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    HN29W12814A 057-sector 768-bit) ADE-203-944B 64-Mbit HN29W6411A) HN29W6411A HITEC 527 Hitachi DSA00164 PDF

    HM6216255H

    Abstract: HM6216255HJP-10 HM6216255HJP-12 HM6216255HJP-15 HM6216255HLJP-10 HM6216255HLJP-12 HM6216255HLJP-15 Hitachi DSA00180
    Text: HM6216255H Series 262114-word x 16-bit High Speed CMOS Static RAM ADE-203-763 Z Preliminary Rev. 0.0 Mar. 27, 1997 Description The HM6216255H Series is an asynchronous high speed static RAM organized as 256-k word × 16-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing technology. It


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    HM6216255H 262114-word 16-bit ADE-203-763 256-k 16-bit. 400-mil 44-pin ns/12 HM6216255HJP-10 HM6216255HJP-12 HM6216255HJP-15 HM6216255HLJP-10 HM6216255HLJP-12 HM6216255HLJP-15 Hitachi DSA00180 PDF

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HM62W16258BI Series z 4 M SRAM 256-kword x 16-bit ADE-203-1072A (Z) Rev. 1.0 Jun. 10, 1999 Description The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable


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    HM62W16258BI 256-kword 16-bit) ADE-203-1072A 144-word 16-bit. 44-pin Hitachi DSA00164 PDF

    200H

    Abstract: HN29W6411TT-50 Hitachi DSA00480
    Text: HN29W6411 Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit ADE-203-637F (Z) Rev. 6.0 May. 12, 1998 Description The Hitachi HN29W6411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are


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    HN29W6411 057-sector 768-bit) ADE-203-637F 200H HN29W6411TT-50 Hitachi DSA00480 PDF

    HM621664HBJP-20

    Abstract: HM621664HBLJP-20 HM621664HB HM621664HBJP-15 HM621664HBLJP-15 HM621664
    Text: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM ADE-203-349 A (Z) Preliminary Rev. 0.1 Jun. 28, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword × 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm CMOS process and high speed circuit


    Original
    HM621664HB 65536-word 16-bit ADE-203-349 64-kword 16-bit. 400-mil 44-pin HM621664HBJP-20 HM621664HBLJP-20 HM621664HBJP-15 HM621664HBLJP-15 HM621664 PDF

    HM62W1664HB

    Abstract: HM62W1664HBJP-25 HM62W1664HBJP-30 HM62W1664HBLJP-25 HM62W1664HBLJP-30
    Text: HM62W1664HB Series 65536-word x 16-bit High Speed CMOS Static RAM ADE-203-415 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword × 16-bit. It realize high speed access time (25/30 ns) with employing 0.8 µm CMOS process and high speed circuit


    Original
    HM62W1664HB 65536-word 16-bit ADE-203-415 64-kword 16-bit. 400-mil 44-pin HM62W1664HBJP-25 HM62W1664HBJP-30 HM62W1664HBLJP-25 HM62W1664HBLJP-30 PDF

    Hitachi DSA002750

    Abstract: No abstract text available
    Text: HN58S65A Series 64 k EEPROM 8-kword x 8-bit Ready/%XV\ Function ADE-203-691A (Z) Preliminary Rev. 0.3 Nov. 1997 Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


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    HN58S65A ADE-203-691A 8192-word 64-byte Hitachi DSA002750 PDF

    HM6264BL

    Abstract: HM6264BI HM6264BLFPI-10T HM6264BLFPI-12T HM6264BLPI-10 HM6264BLPI-12
    Text: HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM ADE-203-492A Z Rev. 1.0 Sep. 5, 1996 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device,


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    HM6264BI 192-word ADE-203-492A 64k-bit HM6264BL HM6264BLFPI-10T HM6264BLFPI-12T HM6264BLPI-10 HM6264BLPI-12 PDF

    diode A2-9

    Abstract: HM6264BLPI-10 HM6264BL HM6264BI HM6264BLFPI-10T HM6264BLFPI-12T HM6264BLPI-12
    Text: HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM ADE-203-492A Z Rev. 1.0 Sep. 5, 1996 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP


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    HM6264BI 192-word ADE-203-492A 64k-bit in80-0 diode A2-9 HM6264BLPI-10 HM6264BL HM6264BLFPI-10T HM6264BLFPI-12T HM6264BLPI-12 PDF

    1086a

    Abstract: HM62W8512BI HM62W8512BLTTI HM62W8512BLTTI-7 HM62W8512BLTTI-8
    Text: a HM62W8512BI Series 4 M SRAM 512-kword x 8-bit ADE-203-1086A (Z) Rev. 1.0 Jul. 13, 1999 Description The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II.


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    HM62W8512BI 512-kword ADE-203-1086A 32-pin 1086a HM62W8512BLTTI HM62W8512BLTTI-7 HM62W8512BLTTI-8 PDF

    Hitachi DSA002750

    Abstract: No abstract text available
    Text: HN58V65A Series HN58V66A Series 64 k EEPROM 8-kword x 8-bit Ready/%XV\ Function, 5(6 Function (HN58V66A) ADE-203-539B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and


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    HN58V65A HN58V66A HN58V66A) ADE-203-539B 8192-word 64-byte Hitachi DSA002750 PDF

    HN58S256A

    Abstract: HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA0047
    Text: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692A Z Rev. 1.0 Sep. 9, 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also


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    HN58S256A 32768-word ADE-203-692A 64-byte HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA0047 PDF