Untitled
Abstract: No abstract text available
Text: 1N4001SG thru 1N4007SG Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - φ0.6mm leads - Compliant to RoHS Directive 2011/65/EU and
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1N4001SG
1N4007SG
2011/65/EU
2002/96/EC
JESD22-B102
D1407028
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1310025
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1310025
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
AEC-Q101
JESD22-B102
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Untitled
Abstract: No abstract text available
Text: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and
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1N4001G
1N4007G
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
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1n4007s
Abstract: in 4007s
Text: 1N4001S thru 1N4007S Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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1N4001S
1N4007S
2011/65/EU
2002/96/EC
JESD22-B102
D1401031
1n4007s
in 4007s
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Untitled
Abstract: No abstract text available
Text: 1N4001S thru 1N4007S Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
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1N4001S
1N4007S
2011/65/EU
2002/96/EC
JESD22-B102
D1402005
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Untitled
Abstract: No abstract text available
Text: 1N4001 thru 1N4007 Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
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1N4001
1N4007
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
JESD22-B102
D1405004
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Untitled
Abstract: No abstract text available
Text: FR101SG thru FR107SG Taiwan Semiconductor CREAT BY ART FEATURES Glass Passivated Fast Recovery Rectifiers - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - φ0.6mm leads - Compliant to RoHS Directive 2011/65/EU and
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FR101SG
FR107SG
2011/65/EU
2002/96/EC
JESD22-B102
D1407032
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1n4007
Abstract: 1N4001 - 1N4007
Text: 1A Standard Rectifiers 1N4001 - 1N4007 1A Standard Rectifiers Features • Low forward voltage drop Low leakage current High forward surge current capability High temperature soldering guaranteed: 265°C/10 seconds /.037" 9.5mm lead length, 5lbs (2.3kg) tension
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1N4001
1N4007
DO-204AL
DO-41)
DO-204AL,
MIL-STD-202E,
Descrip824-8766
1n4007
1N4001 - 1N4007
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1N4007G
Abstract: 1N4005G 1N4006G 1N4001G 4002G 4005G 4006G 1N4003G
Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS 1.0A GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! !
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1N4001G
1N4007G
MIL-STD-202,
DO-41
1N4007G
1N4005G
1N4006G
1N4001G
4002G
4005G
4006G
1N4003G
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1N4007W
Abstract: 1N4007 1N4001-1N4007 datasheet 1N4001 1N4007 10A 1N4001-T3 1N4001-TB 1N4002 1N4002-T3 1N4002-TB
Text: 1N4001 – 1N4007 W TE PO WE R SEM IC O ND UC TO R S 1.0A SILICON RECTIFIER Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! C Case: Molded Plastic
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1N4001
1N4007
MIL-STD-202,
DO-41
1N4007W
1N4007
1N4001-1N4007 datasheet
1N4001
1N4007 10A
1N4001-T3
1N4001-TB
1N4002
1N4002-T3
1N4002-TB
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555 igbt driver
Abstract: st-532948br 2x250V 1N4007 1206 hv transformer driver AO3400 AO3400 MARKING flash trigger transformer 1N4007 GT5G103
Text: AT1455 Preliminary Product Information Photoflash Capacitor Charger for DSC Feature • 2.5V to 5.5V Supply Voltage Operating • • • • • • • • • Range. Low Current Consumption:1mA in operation. Adjustable Output Voltage. Adjustable Switch On-Time.
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AT1455
10-lead
AT1455
350mm3
350mm
555 igbt driver
st-532948br
2x250V
1N4007 1206
hv transformer driver
AO3400
AO3400 MARKING
flash trigger transformer
1N4007
GT5G103
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diode es1j via
Abstract: No abstract text available
Text: AT1454/AT1454A/AT1454B Preliminary Product Information Photoflash Capacitor Charger for DSC Feature ‧ 2.5V to 5.5V Supply Voltage Operating ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ Range. Low Current Consumption:1mA in operation. Adjustable Output Voltage.
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AT1454/AT1454A/AT1454B
AT1454
AT1454A/B
10-lead
350mm
350mm3
diode es1j via
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Untitled
Abstract: No abstract text available
Text: 1N4001G – 1N4007G 1.0A GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
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1N4007SG
Abstract: 1N4001SG A-405 1N4004SG
Text: is 1N4001SG - 1N4007SG TAIWAN SEMICONDUCTOR 1.0 AMP. Glass Passivated Rectifiers A-405 RoHS COMPLIANCE -SBFeatures -v" -Y - -Y - Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability
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OCR Scan
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PDF
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1N4001SG
1N4007SG
MIL-STD-202,
1N4007SG)
A-405
1N4004SG
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1N4001G
Abstract: 1N4007G 4002G 4005G 4007G
Text: IM TAIWAN SEMICONDUCTOR 1N4001G - 1N4007G 1.0 AMP. Glass Passivated Rectifiers DO-41 RoHS COMPLIANCE Features -$• -$• -$■ Glass passivated chip junction. High current capability, Low VF Current capability High reliability High surge current capability
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OCR Scan
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PDF
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1N4001G
1N4007G
DO-41
MIL-STD-202,
1N400XG
1N4007G)
4002G
4005G
4007G
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1N400X
Abstract: 1N4007 1N4001
Text: is 1N4001 - 1N4007 TAIWAN SEMICONDUCTOR 1.0 AMP. Silicon Rectifiers DO-41 RoHS COMPLIANCE .107 2.7 .080 (2.0) DIA. 1.0 (25.4) MIN. Features A High current capability. .205 (5.2) .166(4.2) High efficiency, Low VF. A ❖ High surge current capability. Low prwer loss
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OCR Scan
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PDF
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1N4001
1N4007
DO-41
AEC-Q101
STD-202,
1N4007)
1N400X
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in 4007s
Abstract: 1N4007S 1N4001S A-405 1N4004S 4007s
Text: is TAIWAN SEMICONDUCTOR 1N4001S - 1N4007S 1.0 AMP. Silicon Rectifiers A-405 RoHS COMPLIANCE - £ jh Features -v<• -y<■ High efficiency, Low V F High current capability High reliability High surge current capability Low power loss i j0.6mm leads Green compound with suffix “G” on packing
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OCR Scan
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PDF
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1N4001S
1N4007S
MIL-STD-202,
25tes:
1N4007S)
in 4007s
A-405
1N4004S
4007s
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1N4001G
Abstract: 1N4007G 4002G
Text: TAIWAN SEMICONDUCTOR 1N4001G - 1N4007G 1.0 A M P G lass P assivated R ectifiers RoHS DO-41 COMPLIANCE -E Ü - .1 0 7 2 7 .0 8 0 f2 0) 1.0 (2S.4) MIN UIA Features Glass passivated chip junction High current capability, Low VF. <• High reliability & Current capability.
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OCR Scan
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PDF
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1N4001G
1N4007G
DO-41
DO-41
MIL-STD-202,
1N4007G)
1N4007G
4002G
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1N4005GP
Abstract: BY374 LN4004 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4006GP 1N4007GP 1N5391GP
Text: TAIWAN LITON ELECTRONIC B ffi M^E ]> && 3 5 ^ 5 • OOOMDbO 110 ■ TLIT GLASS PASSIVATED RECTIFIERS -r-oi-15 OPERATING/STORAGE TEMPERATURE RANGE TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward
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OCR Scan
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PDF
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883Sh1S
00040L0
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
5/RL203GP
BY374
LN4004
1N5391GP
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1N4007SG
Abstract: marking code nt 1N4001SG TACF marking BOs T 01-40
Text: TAIWAN % SEMICONDUCTOR 1N4001SG - 1N4007SG 1.0 AMP. Glass Passivated Rectifiers A=4Q.5. RoHS C O M P L IA N C E -22E- Features ❖ •fr ❖ ❖ ■fr ❖ ❖ G la ss p a s s iv a te d ch ip ju n o tio n . High e fficie n cy, L o w VF High c u rre n t c a p a b ility
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OCR Scan
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1N4001SG
1N4007SG
MIL-STD-202,
1N4007SG)
1N4007SG
marking code nt
TACF
marking BOs
T 01-40
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oasis
Abstract: 1N4001S 1N4007S 1N4004S 1N4002S 1N4003S 4002S
Text: E 1N4001S -1N4007S TAIWAN SEM ICON DU COR 1 .0 A M P . S ilic o n tò RoHS R e c tifie r s A=4P-5 C O M P L IA N C E -3 Z U l.n |7!i.4*i MI'I. .107 2.7| oa'(2x>: Features ❖ High e fficien cy, Low VF .29? fo.2j ❖ «• High cu rren t capabi li ly High reliability
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OCR Scan
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PDF
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1N4001S
-1N4007S
MIL-STD-202,
oasis
1N4007S
1N4004S
1N4002S
1N4003S
4002S
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Untitled
Abstract: No abstract text available
Text: TAIWAN LITON ELECTRONIC L I T E M : I 41E » S E M IC O N D U C T O R S • &&35h^B QQ04222 17T * T L I T 1N4001G thru 1N4007G -1 “ - 0 v - v 3 VO LTA G E RANGE 5 0 to 1000 Volts C U R R EN T 1.0 Ampere D O -4 1 FEATURES • Glass passivated chip • Low leakage
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OCR Scan
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QQ04222
1N4001G
1N4007G
DO-15
0201AD
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