TSB41LV06
Abstract: TSB12LV23
Text: TSB41LV06A IEEE 1394a SIX-PORT CABLE TRANSCEIVER/ARBITER SLLS363A – SEPTEMBER 1999 – REVISED NOVEMBER 2000 D D D D D D D D D D D Fully Supports Provisions of IEEE 1394– 1995 Standard for High Performance Serial Bus† and the P1394a Supplement Fully Interoperable With FireWire and
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TSB41LV06A
1394a
SLLS363A
P1394a
TSB41LV06
TSB12LV23
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TSB12LV23
Abstract: TSB41LV06
Text: TSB41LV06A IEEE 1394a SIXĆPORT CABLE TRANSCEIVER/ARBITER SLLS363A − SEPTEMBER 1999 − REVISED NOVEMBER 2000 D Fully Supports Provisions of IEEE 1394− D D D D D D D D D D 1995 Standard for High Performance Serial Bus† and the P1394a Supplement Fully Interoperable With FireWire and
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TSB41LV06A
1394a
SLLS363A
P1394a
TSB12LV23
TSB41LV06
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45VM32160D
Abstract: No abstract text available
Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42/45VM32160D
32Bits
IS42/45VM32160D
-40oC
16Mx32
IS42VM32160D-6BLI
IS42VM32160D-75BLI
90-ball
45VM32160D
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TRANSISTOR mcr 100-8
Abstract: No abstract text available
Text: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault
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MC33389
MC33389
100mA
200mA
125kBaud
MC33388
TRANSISTOR mcr 100-8
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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S6B1713A15
Abstract: S6B1713 S6B1713A05-B0CY S6B1713A05-B0CZ S6B1713A15-B0CY S6B1713A15-B0CZ SM 5271 COM132 S6B1713A15-xxXN
Text: S6B1713 65 COM / 132 SEG DRIVER & CONTROLLER FOR STN LCD March .2002 Ver. 4.2 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any
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S6B1713
COM33
COM34
COM35
COM46
COM47
COM48
COM62
S6B1713A15
S6B1713
S6B1713A05-B0CY
S6B1713A05-B0CZ
S6B1713A15-B0CY
S6B1713A15-B0CZ
SM 5271
COM132
S6B1713A15-xxXN
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code A106
Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
Text: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V
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MD18R3268
256/288Mbit
32Mx18)
576Mb
32K/32ms
code A106
MD18R3268AG0-CM8
MD18R3268AG0-CN1
MD18R3268AG0-CT9
MD18R326GAG0-CM8
MD18R326GAG0-CN1
MD18R326GAG0-CT9
serial presence detect samsung 2010
MARKING A106
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Untitled
Abstract: No abstract text available
Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V
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MS18R1622
288Mbit
16Mx18)
288Mb
16K/32ms
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CI 3060 elsys
Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
Text: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.
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KS0090
26COM/64SEG
KS0090/90-I
KS0090I
KS0090I
CI 3060 elsys
rs 3060 cj
KS* I2C driver
LCD driver KS
SEG60
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SM32200K
Abstract: IS42SM32200K
Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42SM/RM/VM32200K
32Bits
IS42SM/RM/VM32200K
200K-6BLI
IS42SM32200K-75BLI
90-ball
-40oC
2Mx32
IS42RM32200K-6BLI
SM32200K
IS42SM32200K
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IS42RM16160E
Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16160E
16Bits
IS42/45SM/RM/VM16160E
-40oC
16Mx16
IS42SM16160E-6BLI
IS42SM16160E-75BLI
54-ball
IS42RM16160E
IS42VM16160E-75BLI
IS42VM16160E
is42vm16160
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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AK4628AVQ
Abstract: AK4112B AK4529 AK4628A AKD4628 IEC60958 TDM256
Text: ASAHI KASEI [AK4628A] AK4628A High Performance Multi-channel Audio CODEC GENERAL DESCRIPTION The AK4628A is a single chip CODEC that includes two channels of ADC and eight channels of DAC. The ADC outputs 24bit data and the DAC accepts up to 24bit input data. The ADC has the Enhanced Dual Bit
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AK4628A]
AK4628A
AK4628A
24bit
102dB
106dB
MS0385-E-00
AK4628AVQ
AK4112B
AK4529
AKD4628
IEC60958
TDM256
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88128
Abstract: SST55LD019M ata controller flash disk controller write-verify K793
Text: ATA Flash Disk Controller SST55LD019M SST55LD019MHigh-Performance ATA Flash Disk Controller Advance Information FEATURES: • Industry Standard ATA/IDE Bus Interface – Host Interface: 8- or 16-bit access – Supports up to PIO Mode-4 – Supports up to Multi-word DMA Mode-2
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SST55LD019M
SST55LD019MHigh-Performance
16-bit
MO-210,
84-tfbga-BW-9x9-450mic-2
84-ball
S71312:
S71312-01-000
88128
SST55LD019M
ata controller
flash disk controller
write-verify
K793
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EQUIVALENT FOR LV1116N
Abstract: No abstract text available
Text: Ordering number : EN8262A EN8263A LV1116N/NV Bi-CMOS IC Surround Processor ICs for Electronic Volume Control http://onsemi.com Overview The LV1116N/NV are sound processor ICs developed for use in TV sets. They incorporate the surround processing functions including AViSS , pseudo stereo function, (L+R) output, and the
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EN8262A
EN8263A
LV1116N/NV
LV1116N/NV
EQUIVALENT FOR LV1116N
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1046 EN8263A LV1117N/NV Bi-CMOS IC Surround Processor ICs for Electronic Volume Control http://onsemi.com Overview The LV1117N/NV are sound processor ICs developed for use in TV sets. They incorporate the surround processing functions including AViSS , pseudo stereo function, (L+R) output, and the
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ENA1046
EN8263A
LV1117N/NV
LV1117N/NV
A1046-18/18
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46LR32640A
Abstract: Mobile DDR SDRAM
Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR32640A
32Bits
IS43/46LR32640A
32-bit
IS43LR32640A-6BLI
90-ball
-40oC
64Mx32
IS46LR32640A-5BLA1
46LR32640A
Mobile DDR SDRAM
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IS42SM16800F-75BLI
Abstract: IS42SM16800F
Text: IS42SM16800F Preliminary Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are
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IS42SM16800F
16Bits
IS42SM16800F
-40oC
8Mx16
IS42SM16800F-75BLI
54-ball
IS42SM16800F-75BLI
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Untitled
Abstract: No abstract text available
Text: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays
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IDT82V2082
772KHz
TBR12/13
82V2082
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Untitled
Abstract: No abstract text available
Text: IS66WVE2M16BLL Advanced Information 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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IS66WVE2M16BLL
IS66WVE2M16BLL
32Mbit
70nsWVE2M16BLL-70TLI
48-ball
48-pin
MO-207
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Untitled
Abstract: No abstract text available
Text: N32D3225LPAW 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3225LPAW are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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N32D3225LPAW
32Bits
N32D3225LPAW
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Untitled
Abstract: No abstract text available
Text: N128D1618LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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N128D1618LPAW
16Bits
N128D1618LPAW
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Untitled
Abstract: No abstract text available
Text: N128D3218LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3218LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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N128D3218LPAF2
32Bits
N128D3218LPAF2
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Untitled
Abstract: No abstract text available
Text: IS42RM32400F Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are
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IS42RM32400F
32Bits
IS42RM32400F
90Ball
-25oC
4Mx32
IS42RM32400F-6BLE
IS42RM32400F-75BLE
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