TAA 861 A11 Search Results

Contextual Info: PDM4M4060 256K x 32 CMOS Static RAM Module Features n n n n n n n High-density 8 megabit Static RAM module Low profile 72-lead SIMM and Angled SIMM Single In-line Memory Module) Very fast access time: 10 ns (max.) Surface mounted plastic components on an epoxy

Contextual Info: KM48C2000A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: ' The Samsung KM48C200QA/AL/ALLVASL is a high speed CMOS 2,097,152 b it x 8 Dynamic Random Access Memory. Its design is optim ized for high

Contextual Info: W24257AJ-8N ¡’inbond = 7 Electronics Corp. smt:7 32K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24257AJ-8N is a high speed, low power CMOS static RAM organized as 32768 x 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high

CAT28LV65

Contextual Info: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:

W24L257AJ-15

Contextual Info: W24L257A íinbond Electronics Corp. 32K X 8 HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24L257A is a high-speed, low-power CMOS static RAM organized as 32768 x 8 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high

Contextual Info: PRELIMINARY KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C10G0 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

atmel 438

Abstract: Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 atmel 1044 ATMEL 1237
Contextual Info: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance: 104 Cycles

Contextual Info: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page

Contextual Info: TOSHIBA TC5164 5 165AFT/AFTS-40.-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 ,1 94,304-WORD X 16-BIT EDO {HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)165AFT/AFTS is an EDO (hyper page) dynamic RAM organized as 4,194,304 words by 16

Contextual Info: C A T A LY S T Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:

6400L-A5G

Abstract: d4216400
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The

NEC uPD 833

Abstract: NEC 4216160
Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e

T1A12

Abstract: CAT28LV65
Contextual Info: I//// C R T R L Y S T Preliminary • ■ III S E M I C O N D U C T O R CAT28LV65 64K-Bit CMOS E2PROM FEATURES ■ 3.0V to 3.6V Supply CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns Automatic Page Write Operation: - 1 to 32 Bytes in 5ms

Contextual Info: PRELIMINARY KM416C1000 CMOS DRAM 1M x16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C1000 is a CMOS high speed 1,048,576 b it x 16 D ynam ic Random A ccess Memory. Its de sig n is o p tim ized fo r high pe rform ance a p p lica tio n s

MT16HTS51264HY-667

Abstract: MT47H512M8THM MT47H512M8
Contextual Info: 2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664H – 2GB1 MT16HTS51264H – 4GB For component specifications, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small outline dual in-line memory module

MT16HTS51264HY-667

Abstract: ddr2 micron MT47H512M8
Contextual Info: 2GB, 4GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTS25664H – 2GB1 MT16HTS51264H – 4GB For component specifications, refer to Micron’s Web site: www.micron.com Features Figure 1: • 200-pin, small outline dual in-line memory module

4C40H

Abstract: PCMCIA Flash Memory Card 512K a1a17 20H-1T Fujitsu MBM28F010
Contextual Info: March 1994 Edition 2.0 FUJITSU DATA SHEET MB98A8601/8602-17 FLASH MEMORY CARD 256K/512K-BYTE FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD The Fujitsu MB98A8601 and MB98A8602 are Flash electrically erasable and programmable Flash memory cards capable of storing and retrieving large

information applikation

Abstract: A109D information applikation mikroelektronik B303D Mikroelektronik Information Applikation B222D B260D "halbleiterwerk frankfurt" "Mikroelektronik" Heft mikroelektronik heft
Contextual Info: InnJDlkîn 1C = I Information Applikation Monolitisch integrierte IS für die INDUSTRIE­ ELEKTRONIK KATALOG If SONDER-1 Teil 1 |1 HEFT 1 J • ft • • ■ ■ 4 ^ " ■ W ' r; '* r _ ’ rd m D ß = ^ s e l e l - c t 3 n o r i i k Information Applikation

Contextual Info: mH Y II II VI A I HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 2,097,152

1A11BS

Contextual Info: mV Y II II 11A I li II li fl • HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4brts, and fabricated w ith the Hyundai CM O S process. This dual bank circuit consists of two m emories, each 2,097,152

Contextual Info: User’s Manual V850E/IF3, V850E/IG3 32-bit Single-Chip Microcontrollers Hardware V850E/IF3: PD70F3451 μPD70F3452 V850E/IG3: μPD70F3453 μPD70F3454 Document No. U18279EJ2V0UD00 2nd edition Date Published September 2008 N 2007 Printed in Japan [MEMO]

gc 7137 ad

Abstract: 70F3453 U18726E TAA 611 B12 GP 113 LT 33 diode surface mount 433/gc 7137 ad pmc15-1 uPD70F3451 PD70F3452
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

thomson washing machine wd 693

Abstract: E33334 M1487 gf98 PD70F3454GF-GAS-AX
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec V850e architecture manual

Abstract: LT 420 bsw 22 U18865E PD70F3916GF-GAT-AX diode p711 adnf PIC15
Contextual Info: User’s Manual 32 V850E/IG4, V850E/IH4 User’s Manual: Hardware RENESAS MCU V850E/Ix4 Microcontrollers V850E/IG4: PD70F3913 μPD70F3914 μPD70F3915 V850E/IH4: μPD70F3916 μPD70F3917 μPD70F3918 All information contained in these materials, including products and product specifications,