TA25T Search Results

transistor C3467

Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
Contextual Info: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

M9412

Abstract: 2SC5047
Contextual Info: SANIYO T r a n s i s t o r s f o r Very Hig h - D e f i n i t i o n CRT D i s p l a y H o r i z o n t a l D e f l e c t i o n Output Use 2 otc S t r u c t u r e a n d S t ru c tu r e p a tt e r n e d with a large number of u n i t s c o n s i s t i n g of base

1j63

Abstract: .1J63 7062l
Contextual Info: f QE1F-PIus Device f t r H Quad E1 Framer-Plus TXC-03114 DATA SHEET DESCRIPTION The QE1F-Plus is a four-channel E1 2048 kbit/s framer designed for voice and data communications applications. A dual unipolar or NRZ line interface is supported with full alarm detection and generation per

JA04-03A

Abstract: ESJA04-03A
Contextual Info: This m alerial end the Information herein 1» Hie property of Fuji Electric Co.,Lid. They shell be neither reproduced, copied, tent, or disclosed tn erty way whatsoever lor he use ol Any (hlrd parly nor used lor the manufacturing purposes without (he express written consent Ot Fi^l Electric Co.,Lt(J.

mitsubishi microwave

Abstract: MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and

Contextual Info: T-Series Single Pole Rocker & Paddle Switches The predecessor to the Curvette series whose versatility has allowed it to stand the test of time. Traditional styling coupled with self cleaning contacts, integrated wire leads, a multitude of circuits, ratings, and actuator choices

CH341A

Abstract: 03104 bilq AMI 52 732 V TS16 TXC-03114 national alarm RFTS-10 X77H-X70H
Contextual Info: QE1F-Plus Device Quad E1 Framer-Plus TXC-03114 FEATURES DESCRIPTION • Offline framer supports Standard and Frame Hold-Off frame alignment with CRC-4 multiframe check and selectable out of frame criteria, and transparent non-framing mode • Frame alignment detection and loss of frame

Contextual Info: KSR1105 NPN EPITAXIAL SILICON TRANSISTO R SW ITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri «4.7kQ, R 2=10kQ) • Complement to KSR2105 ABSO LU TE MAXIMUM RATINGS (TA-25t:)

Contextual Info: KSC1393 NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER RF AMPLIFIER FORWARD AGC TO-92 • High Current Gain Bandwidth Product fr=700MHz (Typ) • Low Noise Figure NF=3.0dB (Max) at f*200MHz • Low Reverse Transfer Capacitance C RE=0.5pF (Max) ABSOLUTE MAXIMUM RATINGS (TA-25t:)

Contextual Info: KSR2014 PNP EPITAXIAL SILICON TRAN SISTO R SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R,«4.7kQ, R ^ T k fl) • Complement to KSR1014 ABSOLUTE MAXIMUM RATINGS (TA=25t:)

Contextual Info: KSR2109 PNP EPITAXIAL SILICON TRAN SISTO R SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching circuit. Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R“4.7kQ) • Complement to K SR 1 109 ABSOLUTE MAXIMUM RATINGS (T*-25r)

Contextual Info: KSD1020 NPN EPITAXIAL SILICON TRAN SISTO R AUDIO FREQUENCY AMPLIFIER • Complement to KSB810 ABSOLUTE MAXIMUM RATINGS TA*25'C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse)

09dz11

Abstract: 05dz11 3DZ13 PQ30Z13 3DZ53 05dz51 pq05dz51series 12dz11 PQ12DZ5U pq09DZ1U
Contextual Info: Low Power-Loss Voltage Regulators PQ05DZ51/11 Series / PQ3DZ53/13 PQ05DZ51/11 Series/PQ3DZ53/13 0.5A/1.0A Output, General Purpose, Surface Mount Type I.ow Power-Loss Voltage Regulator • Outline Dimensions Features Unit : mm • Low power-loss (Dropout voltage : MAX. 0.5V)

Contextual Info: 2N6515 NPN EPITAXIAL SILICON TRAN SISTO R HIGH VOLTAGE TRANSÌSTOR TO-92 • Collector-Emitter Voltage: V ceo* 250V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (Ta-25TC) Characteristic Collector-Base Voltage Collector-Emitter Voltage

GL5ED44

Contextual Info: GL5ED44 Dichromatic LED L a m p s ~ 5mm T-1 % Cylinder Type Dichromatic LED Lamps GL5ED44 9 Outline Dimensions H Model No. GL5ED44 Yellow -green Red (Unit: mm) GaP GaAsP/GaP 1, + 5mm(T-1 %) all resin mold 2. Radiation color : Red, yellow-green and orange (mixed color)

Contextual Info: Features 1. ü is e ê ^ . LrniÊ qriB & iB s j 1. V e ry -s m a ll-s iz e d and th in c h ip LED w h ic h m a ke s rig h t-a n g le m o u n tin g available. 2. Dimensions: 1 8 L x 1.1 5 (W )x 0 .5 (H ) mm. /jv ^ u /^ L E D r - T o -8(L) X 1.1 5(W ) x

2sc4710

Contextual Info: S4ÜV0 T r a n s i s t o r s for V e r y H i g h - D e f i n i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use 3 otc D y n a m i c s F o c u s U s e (No picture ever out of focus with better focus c h a r a c t e r i s t i c s )

1SS312

Contextual Info: SILICON EPITAXIAL PLANAR TYPE 1SS312 VHF TUNER BAND SWITCH APPLICATIONS Unit in mm . Small Package. 1.25±0.1 . Small Total Capacitance : C t = 1 •2pF Max. 3. Low Series Resistance MAXIMUM : rs=0 .6n(Typ.) RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING

Contextual Info: J TC74HC688AP/AF/AFW 8 -B IT EQ UA LITY COMPARATOR T he TC74HC688A is a high speed cmos 8 - B IT E Q U A L I T Y C O M P A R A T O R fabricated with silicon gate C 2M O S technology. It achieves the high speed operation s im ila r to equivalent L S T T L w hile m ain tain in g the C M O S low power

CH341A

Abstract: digital trainer schematic diagram laf 0001 CH3401 J0123 ccs ldl HP 3D6 000A75 X77H-X70H TO SI 788 48D
Contextual Info: H i/1 I - = - ^ • QE1F Device Quad E1 Framer TXC-03104 DATA SHEET FEATURES DESCRIPTION • Offline framer supports Standard and Frame Hold-Off frame alignment with CRC-4 multiframe check and selectable out of frame criteria, and

76 COC 9K

Abstract: VIP 22A 2048KHZ 44145 ch3406
Contextual Info: QE1F Device Quad E1 Framer TXC-03104 DATA SHEET FEATURES DESCRIPTION ^ * Offline framer supports Standard and Frame Hold-Off frame alignment with CRC-4 multiframe check and selectable out of frame criteria, and transparent non-framing mode * Frame alignment detection and loss of frame

TIC147

Contextual Info: E1 Fx8 Device a n 8-Channel E1 Framer TXC-03109 X-S w i t c h DATA SHEET PRODUCT PREVIEW DESCRIPTION FEATURES Eight-channel offline framer supports standard and frame hold-off frame alignment with CRC-4 multiframe check, selectable out of frame criteria and change of frame

Contextual Info: QE1F Device Quad E1 Framer TXC-03104 DATA SHEET FEATURES DESCRIPTION = • Offline framer supports Standard and Frame Hold-Off frame alignment with CRC-4 multiframe check and selectable out of frame criteria, and transparent non-framing mode • Frame alignment detection and loss of frame