transistor C3467
Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
Text: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,
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30-50Z
mounting213
FP214
FP401
2SK2167X2)
2SB1121X2
2SD1621X2
2SB1123X2
2SD1623X2
2SB1397X2
transistor C3467
A1370 transistor
C3467
A1728
c3467 transistor
SFCPA
B1123
transistor A1370
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lt 715 1111
Abstract: EPSP hj 4094 DB10 TMC1241 TMC12441 TMC12441B6B
Text: TMC12441 Self-Calibrating 12-Bit Plus Sign, 13/*s, /<P-Compatible Sampling A/D Converter Tested and Specified for DSP Applications TRW 's TMC12441 is a CMOS successive approximation analog-to-digital converter with 13-bit resolution. Physically identical to the TMC1241, the TMC12441 is
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TMC12441
12-Bit
TMC12441
13-bit
TMC1241,
1241E1C
lt 715 1111
EPSP
hj 4094
DB10
TMC1241
TMC12441B6B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0904A L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 4 A , GaAs OUTLINE DRAWING F E T w ith an N-channel schottky U n it: m illim e te rs inches gate, is designed fo r use in U H F band am plifiers. FEATURES
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GF0904A
15dBm
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I251 diode
Abstract: DLF60 Z311 I251 DE3L4 HE87 HJC.1 de5s6 DE3L
Text: #jf+j;B OUTLINE DIMENSIONS n Case 1 1Z Type 4 + SlZAO P 3 6 0 0 V l.lA Standard soldering pad H z$!& R A T I N G S @jkj~~~$$ Absolute 1 ‘ , r’f. , /,h t $ Storage Temperature :; :; ,‘, 1; : ;,a ‘11 Operating Junction Temperature ir ,I [I(! ;I” &ii’ f:
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Original
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Ta-25-C
I251 diode
DLF60
Z311
I251
DE3L4
HE87
HJC.1
de5s6
DE3L
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Untitled
Abstract: No abstract text available
Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical
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P4C1981
/P4C1981L,
P4C1982/P4C1982L
l2/l5/20/25ns
20/25/35/45/55ns
P4C1981L/1982L
P4C1981/L
P4C1982/L
P4C1981/82
P4C1981L/82L
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TXAL 228 B
Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Text: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X
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/PA17Q2
PA1710
TXAL 228 B
2SAB12
K1589
2sc2554
k2499
P015M
2SD 1694
2482S
K2134
diode zener nt 1243
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Untitled
Abstract: No abstract text available
Text: HI6H SPEED SWITCHIN6 OPERATIONAL AMPLIFER NJM2121 The NJM2121 is a dual operational aplifier o f 2-INPUT and 1-OUTPUT with analog switch. The NJM2121 can be used as analog switch under the condition o f G v = 0 dB, as S w itch+A m p in order that each gain A or B can be adjusted independently.
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OCR Scan
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NJM2121
NJM2121
NJM4560.
Ta-25C)
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Untitled
Abstract: No abstract text available
Text: 2.5 GHz DIVIDE- B Y - 128/64 P RESC A LER FEATURES UPB588B UPB588G TEST CIRCUIT • HIGH FREQUENCY OPERATION TO 2.5 GHz Vcc • WIDE BAND OPERATION . SINGLE SUPPLY VOLTAGE: Vcc - 5 V ±10% AVAILABLE IN TAPE AND REEL G08 PACKAGE DESCRIPTION The UPB588 series of devices are silicon bipolar digital
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UPB588B
UPB588G
UPB588
individe-by-64
ordivide-by128
UPB588B)
UPB588G)
2500/Reel
UPB588G-E1
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Untitled
Abstract: No abstract text available
Text: • Ì 6 Ì Ì # ^ : $ f è / Absolute Maximum Rating ILLUMINATED TACTILE SWITCH T . - f 'j / 'f - /S w itc h p o rtion 12V 2 0 m A L E D ® fi5L E D CO £ /LED portion Per LED chip)(Ta 25"C) E9 mmm Symbol Rating (mW) P: 65 fmA1 wmm Forward current
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transistor npn c 6073
Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)
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NE681
OT-23)
transistor npn c 6073
433 SOT-23
transistor npn d 2078
944 1L2
NE68139
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ Vo = 120 dBnV/75 a The NE246 is an NPN transistor designed for broadband
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OCR Scan
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NE24615
NE24620
dBnV/75
NE24600
NE24615
NE246
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TLR4262
Abstract: tlr-4262 tlr2268 TLG2268 TLG4262 7 Segment Display GL IF5B
Text: DE J TCHVSSD DOlTEtil □ TOSHIBA {DISCRETE/OPTO} 99D 17261 9097250 TOSHIBA <DISCRETE/OPTO D-T-vA\-B'5 TLR2 I98, TLR4 I92, TLR2268, TLR4262 RED COLOR 4 DIGITS LE D DISPLAY • For Duplex Drive connection and available both polarity coaaoo anode or coanon
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OCR Scan
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TLR2268,
TLR4262
TLG2198
TLG4192
TLG2268
TLG4262
Ta-25C)
IF-20mA
Ta-35TC
TLR4262
tlr-4262
tlr2268
7 Segment Display GL
IF5B
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FMLM
Abstract: NJM2115 NJH2115V NJM2100 NJM2115D NJM2115L NJM2115M NJM2115 equivalent
Text: DUAL OPERATIONAL AMPLIFIER NJM2115 T h e N JM 2115 is a low supply V oltage ± 1 .0 V m in. an d low satu ratio n o u tp u t voltage (± 2 .0 V p-p a t supply voltage + 2 .5 V ) o p eratio n al am plifier. It is a p p licab le to H A N D Y T Y P E C D , R A D IO C A S S E T E C D , an d P O R T A B L E D A T , th a t
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OCR Scan
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NJM2115
NJM2115
NJM2100
Ta-25C)
FMLM
NJH2115V
NJM2115D
NJM2115L
NJM2115M
NJM2115 equivalent
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2SD987
Abstract: No abstract text available
Text: 2S D 98 7 2SD987 NPN=Mi£1ifc7fc'> U =i > h * ' - V > b >&M ? NPN Silicon T riple Diffused D arlington T ra n sisto r High V oltage Low Speed S w itching Industrial Use K H E t l J t * -f -y *• > Vm X « ffl 2 S D 9 8 7 ¡ i i f t i S S x -i ^ 3 K /P A C K A G E DIMENSIONS
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OCR Scan
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2SD987
2SD987iifftiiJtX
-25-C)
PWS300
PWS350
2SD987
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2SA522
Abstract: 2SA522A 2SD110 2SK15-M 8D-18 3SK28-M MS0912 3SK28
Text: f l * £ *& Ta=25°C Vf;|)S e æ * M # m m « « M S0912 -60731 ßWiSJWW Nf t ^ 2 S K 1 5 -M 3 S K 2 8 -M N Tj p -3 0 V'GIDS 18 Vg2I)S -18 -= + T ?•«.»<>» I C SS ft MIN Vos (V ) Vus (V ) (m A ) -1 0 0 .8 V e is -1 5 \fc[G2 =- 0 3 .7 * M AX (V) M S0912 - 60730
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OCR Scan
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Ta-25
MS0912
2SK15-M
3SK28-M
Ici-10
Iq-10
8D-18Ã
2SD110
2SA522
2SA522A
2SD110
8D-18
3SK28
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2SA847
Abstract: 2SA847A knx-1 low noise preamplifier knx1
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse
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OCR Scan
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2SA847A
2SA847A
-120V
150MHz
t270Hz
270Hz
2SA847
knx-1
low noise preamplifier
knx1
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CNC CIRCUIT DIAGRAM
Abstract: CNC ELECTRICAL DIAGRAM 3.56Mhz
Text: MITSUBISHI ICs VCR M52371FP COLOR PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M52371FP Is a semiconductor Integrated circuit that integrates a color signal aperture Improvement and color noise canceller Into a slngle-chip. YLPF ADJ. [T OFFSET12 [2
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M52371FP
M52371FP
OFFSET12
OFFSET22
OFFSET11
OFFSET21
CNC CIRCUIT DIAGRAM
CNC ELECTRICAL DIAGRAM
3.56Mhz
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Untitled
Abstract: No abstract text available
Text: PHILIPS E C G INC 17E □ • bhS^TEÖ EC G 8 6 9 Dual Op Amp/Programmable Sem iconductors Features • User programmable gain bandwidth product, slew rate, input bias current, output stage biasing current and total device power dissipation • High gain bandwidth product
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ECG869
ECG869
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PDF
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transistor 16305
Abstract: No abstract text available
Text: TOSHIBA OISCRETE/OPTO} 90D 16302 9097250 TOSHIBA DISCRETE/OPTO ¿Tostulic SEMICONDUCTOR D T-3J-3S MG15N2CK1 TECHNICAL DATA MG15N6EK1 W o cs ös m H o 2: 00 o f vf £\ > W vO 2 m cs a TOSHIBA CORPORATION OT I A 2 A - 309 - 2 - > L » î "TO TOSHIBA {DISCRETE/OPTO}
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OCR Scan
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MG15N2CK1
MG15N6EK1
MG15N2CK1
Ta-25cC)
T0T7550
0Dlti30b
DT-33-35
transistor 16305
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7029| Schottky Barrier Diode SBS806M S 4Ü V D 30V, 0.5A Rectifier Applications Package Dimensions • High frequency rectification switching regulators. unit ; mm converters, choppers . 1310 Features • Low forward voltage (IF-0.3A , V f max=0.4V)
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ENN7029|
SBS806M
SBS006.
Ta-25cC
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Untitled
Abstract: No abstract text available
Text: Sept. 1995 Edition 5.0b FUJITSU DATA S H E ET MB1502/MB1502H SERIAL INPUT PLL FREQUENCY SYNTHESIZER LOW POWER SERIAL INPUT PLL SYNTHESIZER WITH 1.1 GHz PRESCALER The Fujitsu MB1502/MB1502H, utilizing Bi-CMOS technology, are single chip serial input PLL synthesizers with pulse-swallow function. Each MB1502/MB1502H
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OCR Scan
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MB1502/MB1502H
MB1502/MB1502H,
MB1502/MB1502H
16-bit
15-bit
14-blt
19-bit
18-bit
D16033S-2C
MB1502
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TC40H032P
Abstract: tc40h032 4C51
Text: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA T P I U 4 . n i i n i 9 P T U n U Ü f c r / F / I C 2M O S DIGITAL IN T EG RA T ED C IR C U IT S IL IC O N M O N O LIT H IC TC40H032 QUAD 2 - INPUT OR GATE PIN CONNECTION MAXIMUM RATING TRUTH TABLE CHARACTERISTIC
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OCR Scan
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TC40H032P/F
TC40H032
TC40H032P
4C51
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PDF
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Untitled
Abstract: No abstract text available
Text: BSiTOKO r e y io r a v ilP M I F D G O T M TK11950 VO LTAG E R E G U L A T O R W IT H R E S E T O U T P U T FEATURES APPLICATIONS • Very Low Dropout Voltage ■ Reset Output for Microprocessor ■ Battery Powered Systems ■ Very Low Quiescent Current No Load
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OCR Scan
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TK11950
TK11950
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PDF
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2sa979
Abstract: No abstract text available
Text: =s^mm \-=rs=/n.i 2SA 979 •ij «* 2SA979U, '> y a ^ P N P i f ^ J r J ' r *?"!-— t"? * > a v p n p x — 7 =lT ^ h *»ea T >'s f f i » i i 3 £ if l| i s f f l t L T ä S t t f i - n ^ { j T " f „ : #tt® £ < * ^ > / : h 7 y ^ X ? 2 8 .1 m a x .
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