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    TA247 Search Results

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    TA247 Price and Stock

    Tai-Saw Technology Co Ltd TA2471A

    SAW FILTER, SM1109-5PAD, 915.000
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    DigiKey TA2471A Cut Tape 4,222 1
    • 1 $1.23
    • 10 $1
    • 100 $0.8152
    • 1000 $0.66494
    • 10000 $0.66494
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    TA2471A Digi-Reel 4,222 1
    • 1 $1.23
    • 10 $1
    • 100 $0.8152
    • 1000 $0.66494
    • 10000 $0.66494
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    PEI Genesis AIT1TA24-79SC

    CONN RCPT FMALE 5P SILVER CRIMP
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    DigiKey AIT1TA24-79SC Bag 4 1
    • 1 $115.59
    • 10 $100.18
    • 100 $69.36
    • 1000 $69.36
    • 10000 $69.36
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    Diodes Incorporated BAT54CTA-2477

    DIODE ARR SCHOT 30V 200MA SOT23
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    Diodes Incorporated BAT54ATA-2477

    DIODE ARR SCHOT 30V 200MA SOT23
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    Diodes Incorporated ZLLS410TA-2477

    DIODE
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    TA247 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA247

    Abstract: M58CR064C M58CR064D TFBGA56
    Text: TA247 TECHNICAL ARTICLE ST challenges 3G Mobile Communications: High-speed 64 Mbit Low Voltage Flash Memory . Marco Redaelli, STMicroelectronics, Agrate, Italy Future third generation mobile communications will support high-speed multimedia data transfers


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    PDF TA247 M58CR064 TA247 M58CR064C M58CR064D TFBGA56

    EC3H03B

    Abstract: No abstract text available
    Text: Ordering number : ENN6576 EC3H03B NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H03B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • 0.05 • unit : mm 2183 0.25 •


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    PDF ENN6576 EC3H03B EC3H03B] S21e2 E-CSP1006-3 EC3H03B

    EC3H05B

    Abstract: No abstract text available
    Text: 注文コード No. N 6 5 7 4 EC3H05B 三洋半導体データシート N EC3H05B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である:NF=1.2dB typ(f=1GHz) 。 。


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    PDF EC3H05B S21e2 S21e2 EC3H05B

    zo 607 MA

    Abstract: equivalent ZO 607 transistor zo 607 EC3H04B
    Text: Ordering number : ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H04B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • unit : mm 2183 0.05 • Low noise : NF=1.7dB typ f=2GHz .


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    PDF ENN6577 EC3H04B EC3H04B] E-CSP1006-3 zo 607 MA equivalent ZO 607 transistor zo 607 EC3H04B

    EC3H04B

    Abstract: 1652 PS
    Text: 注文コード No. N 6 5 7 7 EC3H04B No. N 6 5 7 7 63000 新 EC3H04B 高周波低雑音増幅 , 発振用 ・低雑音である:NF=1.7dB typ(f=2GHz) 。 ・しゃ断周波数が高い:fT=8GHz typ(VCE=1V) 。 ・低電圧動作。 ・超小型(1006 サイズ)


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    PDF EC3H04B EC3H04B 1652 PS

    CPH3120

    Abstract: No abstract text available
    Text: Ordering number:ENN6353 PNP Epitaxial Planar Silicon Transistor CPH3120 Compact Motor Driver Applications Package Dimensions unit:mm 2150A [CPH3120] 2.9 0.15 0.4 0.2 • Small saturation voltage. · Contains a diode between collector and emitter. · Contains bias resistance between base and emitter.


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    PDF ENN6353 CPH3120 CPH3120] CPH3120

    2SC5610

    Abstract: 2SA2022 2SC561 2SA20 TA247
    Text: Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2041A Features [2SA2022/2SC5610] · Adoption of MBIT processes.


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    PDF ENN6367 2SA2022/2SC5610 2SA2022/2SC5610] 2SA2022 O220ML 2SC5610 2SA2022 2SC561 2SA20 TA247

    TA-2474

    Abstract: FTS1011 S1011 ta2474 A3100
    Text: Ordering number : ENN7003 FTS1011 P-Channel Silicon MOSFET FTS1011 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. 2.5V drive. Mounting height 1.1mm. unit : mm 2147A [FTS1011] 3.0 0.65 5 4.5 6.4 0.5 8 0.425 0.95


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    PDF ENN7003 FTS1011 FTS1011] TA-2474 FTS1011 S1011 ta2474 A3100

    EC3H05B

    Abstract: No abstract text available
    Text: Ordering number : ENN6574 EC3H05B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Type Silicon Transistor EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Low noise : NF=1.2dB typ f=1GHz . High gain : S21e2=13dB typ (f=1GHz).


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    PDF ENN6574 EC3H05B S21e2 EC3H05B

    EC3H03B

    Abstract: No abstract text available
    Text: 注文コード No. N 6 5 7 6 EC3H03B 三洋半導体データシート N EC3H03B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅 , 発振用 ・低雑音である:NF=1.1dB typ(f=1GHz)


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    PDF EC3H03B S21e2 S21e2 EC3H03B

    EC3H03B

    Abstract: No abstract text available
    Text: Ordering number : ENN6576 EC3H03B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features • • • • Low noise : NF=1.1dB typ f=1GHz . High gain : S21e2=12dB typ (f=1GHz).


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    PDF ENN6576 EC3H03B S21e2 EC3H03B

    EC3H05B

    Abstract: transistor s11 s12 s21 s22
    Text: Ordering number : ENN6574 EC3H05B NPN Epitaxial Planar Type Silicon Transistor EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications Features 0.35 0.2 0.25 [EC3H05B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • 0.05 • unit : mm 2183 0.25 • Package Dimensions


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    PDF ENN6574 EC3H05B EC3H05B] S21e2 E-CSP1006-3 EC3H05B transistor s11 s12 s21 s22

    EC3H04B

    Abstract: ZO 607 MA TA2478
    Text: Ordering number : ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H04B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • 0.05 • unit : mm 2183 0.25 • Package Dimensions


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    PDF ENN6577 EC3H04B EC3H04B] E-CSP1006-3 EC3H04B ZO 607 MA TA2478

    2SC5610

    Abstract: 2SA2022 TA2470 N636
    Text: 注文コード No. N 6 3 6 7 2SA2022/2SC5610 No. N6367 O2099 2SA2022 / 2SC5610 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ DC / DC コンバータ用 用途 ・リレードライブ , ランプドライブ , モータドライブ , ストロボ。


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    PDF 2SA2022/2SC5610 N6367 O2099 2SA2022 2SC5610 2SA2022 500mA 125mA IT01360 2SC5610 TA2470 N636

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


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    2N4064

    Abstract: 2N4063 2N3440 TA-2470 2N3439 2N3439 IR 2N3440 HARRIS ta2458
    Text: P ow er Transistors File N um b er 64 HARRIS SEMICOND SECTOR 2N3439, 2N3440, 2N4063, 2N4064 57E D • 4302271 O G IT ? ^ Ö «HAS. TERMINAL DESIGNATIONS H igh-V oltage Silicon N -P -N Planar Transistors F or H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s


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    PDF 2N3439, 2N3440, 2N4063, 2N4064 2N4063) 2N4064) 2N4064 2N4063 2N3440 TA-2470 2N3439 2N3439 IR 2N3440 HARRIS ta2458

    2N4063

    Abstract: 2n3440 equivalent RCA-2N3439 2N3439 2N3439 RCA 2N4064 2N3440 2N3440 rca rca 2n3440 RCA transistors 2n3440
    Text: D l K j 3 a 7 S 387S0S1 Q E SOLID STATE a i 0 0 1 7 1 5 4 „ ,= q • “ , | 4 D T'B'S-I'B High-Voltage Power Transistors 2N3439, 2N3440, 2N4063, 2N4064 High-Voltage Silicon N-P-N Planar Transistors


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    PDF 2N3439, 2N3440, 2N4063, 2N4064 2N4063) 2N4064) 2N4063 2n3440 equivalent RCA-2N3439 2N3439 2N3439 RCA 2N3440 2N3440 rca rca 2n3440 RCA transistors 2n3440