DP8308N-B
Abstract: D-20 DP7307J DP7307JB DP7308J DP7308JB DP8307J DP8307N DP8308J DP8308JB
Text: Am73/8307 • Am73/8308 Octal Three-State Bidirectional Bus Transceivers DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • 8 - b it b id ir e c tio n a l d a ta f lo w r e d u c e s s y s te m p a c k a g e c o u n t T h e A m 7 3 /8 3 0 7 • 3 - s ta te in p u ts /o u tp u ts fo r in te r fa c in g w ith b u s - o r ie n te d
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Am73/8307
Am73/8308
300pF
MIL-STD-883
DP7307J
DP7308J
DP8308N-B
D-20
DP7307JB
DP7308JB
DP8307J
DP8307N
DP8308J
DP8308JB
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TA 8783 N
Abstract: TA 8783 7432 D1029N D2209N D2659N D4401N D660N D748N
Text: B2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 690 Veff 630 V 2200 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] ~ Satzstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] [ltr/s]
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D748N
D660N
D1029N
D2209N
TA 8783 N
TA 8783
7432
D1029N
D2209N
D2659N
D4401N
D660N
D748N
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772 5912
Abstract: DIODE 8069 T718N v 4520 T1509N T1989N T298N T358N T588N T719N
Text: M3.2C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 220 V 1400 V 280 V 1600 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] [W] 35 350 520 770
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21068F
772 5912
DIODE 8069
T718N
v 4520
T1509N
T1989N
T298N
T358N
T588N
T719N
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T879N
Abstract: T 1829 T1189N T1509N T178N T1989N T298N T358N T508N T718N
Text: B6C - Schaltung ~~~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 540 V 1400 V 670 V 1600 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 386 512 640 835 1103
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T1189N
Abstract: T1509N T178N T1989N T298N T358N T508N T718N T879N
Text: B6C - Schaltung ~~~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 540 V 1400 V 670 V 1600 V Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id [°C] [A] [W] 25 386 512 640 835 1103
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E188CC
Abstract: 7308 tube philips SQ 10 amplifier philips 1968
Text: E188CC 7308 S.Q. TUBE Sp ecial quality double trio d e designed fo r use as casco d e a m p lifie r, cathode f o l lower etc . in R . F . and A . F . c i r c u i t s . QUICK REFERENCE DATA L ife te st 10 000 hours Low in te rfa c e re s is ta n c e M ech anical quality
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E188CC
E188CC
7308 tube
philips SQ 10 amplifier
philips 1968
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T1189N
Abstract: T1509N T1989N T298N T358N T588N T718N T719N
Text: B6C - Schaltung ~~~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 540 V 1400 V 670 V 1600 V Temp. tA Satzstrom Id [°C] [A] [W] 35 175 260 385 439 585 623 759 890 937 1095 164 246 365 419 557
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4828
Abstract: T1189N T1509N T1989N T298N T358N T588N T718N T719N
Text: B6C - Schaltung ~~~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 540 V 1400 V 670 V 1600 V Temp. tA Satzstrom Id [°C] [A] [W] 35 175 260 385 439 585 623 759 890 937 1095 164 246 365 419 557
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MIC29302WT
Abstract: No abstract text available
Text: Bi CMOS DMOS METAL GATE OPERATING LIFE @ TA = +125C AT RATED VOLTAGE BCDM PROCESS Vcc Sample Size Act Hrs Fails TO-263 TO-220 TO-263 + 26V + 26V +26V 116 116 116 168 168 168 500 500 1000 1000 1000 116000 116000 116000 2A06111M03 SOT-223 +26V 110 168 500 1000
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O-263
O-220
2A06111M03
OT-223
MIC29302AWU
MIC29302WUY
MIC29302WU
MIC29302
MIC29302WT
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8118Z
Abstract: 7312Z 8201Z
Text: S TA N D A R D A C C U R A C Y A N A L O G M E T E R S 2 1.5 INCH 350 SERIES EDGEWISE METER Accuracy: 5% 2.5 INCH 850 SERIES ROUND BARREL METER 3.5 INCH 750 SERIES ROUND BARREL METER Accuracy: Accuracy: 5% 5% Technology: DC Models, polarized-vane solenoid or moving magnet AC
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7403z
7404z
7412z
7405z
7406z
7407z*
7414z*
8403z
8404z
8412z
8118Z
7312Z
8201Z
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7313
Abstract: en61558 7313 28 pin 030.7294 030-7309 ta 7299 TA 7308 E113449 EI30 LT2007
Text: LAMINATED TRANSFORMERS Type EI30 / 15.5 - 2.0VA AGENCY APPROVALS 10.50 1 030-7304.0 1/3* 9 / 222 14.60 1 030-7305.0 1/3* 3. EN61558 230 12 / 166 20.00 1 030-7306.0 1/3* 230 15 / 133 26.00 1 030-7307.0 1/3* 230 18 / 111 29.60 1 030-7308.0 1/3* 230 24 / 83 37.20
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E113449
EN61558
2x115
LT2007
7313
en61558
7313 28 pin
030.7294
030-7309
ta 7299
TA 7308
E113449
EI30
LT2007
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2X36
Abstract: E113449 EI30 LT2007 030-7309.0 2X194 2x12 BV 030-7307.0 BV 030-7306.0
Text: LAMINATED TRANSFORMERS Type EI30 / 15.5 - 2.0VA AGENCY APPROVALS 10.50 1 030-7304.0 1/3* 9 / 222 14.60 1 030-7305.0 1/3* 3. EN61558 230 12 / 166 20.00 1 030-7306.0 1/3* 230 15 / 133 26.00 1 030-7307.0 1/3* 230 18 / 111 29.60 1 030-7308.0 1/3* 230 24 / 83 37.20
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E113449
EN61558
2x115
LT2007
2X36
E113449
EI30
LT2007
030-7309.0
2X194
2x12
BV 030-7307.0
BV 030-7306.0
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BV 030-7307.0
Abstract: No abstract text available
Text: LAMINATED TRANSFORMERS Type EI30 / 15.5 - 2.0VA AGENCY APPROVALS 10.50 1 030-7304.0 1/3* 9 / 222 14.60 1 030-7305.0 1/3* 3. EN61558 230 12 / 166 20.00 1 030-7306.0 1/3* 230 15 / 133 26.00 1 030-7307.0 1/3* 230 18 / 111 29.60 1 030-7308.0 1/3* 230 24 / 83 37.20
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E113449
EN61558
2x115
2x115
BV 030-7307.0
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Untitled
Abstract: No abstract text available
Text: LAMINATED TRANSFORMERS Type EI30 / 15.5 - 2.0VA AGENCY APPROVALS 10.50 1 030-7304.0 1/3* 9 / 222 14.60 1 030-7305.0 1/3* 3. EN61558 230 12 / 166 20.00 1 030-7306.0 1/3* 230 15 / 133 26.00 1 030-7307.0 1/3* 230 18 / 111 29.60 1 030-7308.0 1/3* 230 24 / 83 37.20
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E113449
EN61558
2x115
2x115
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Untitled
Abstract: No abstract text available
Text: IS 2224-2 AMP INCORPORATED H arrisburg, Pa. 17105 DUAL CRIMP JACKS 7-30-81 RELEASED I REVISED CONNECTOR P/N HAND TOOL PfN Instr. Sheet 2224 DIE SET FOR TOOL P/N 69365 <lnstr. Sheet 2983) RG/U CABLE GOLD 174,188 51750-1 228027 1 220020-1 220018-1 178,196
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RD-316
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Si4992EY-T1-E3
Abstract: Si4992EY
Text: Si4992EY New Product Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D High-Efficiency PWM Optimized PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.048 @ VGS = 10 V 4.8 0.062 @ VGS = 4.5 V
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Si4992EY
Si4992EY--E3
Si4992EY-T1--E3
S-41640--Rev.
06-Sep-04
Si4992EY-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si4992EY New Product Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D High-Efficiency PWM Optimized PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.048 @ VGS = 10 V 4.8 0.062 @ VGS = 4.5 V
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Si4992EY
Si4992EY--E3
Si4992EY-T1--E3
08-Apr-05
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Si7806BDN
Abstract: Si7806BDN-T1-E3
Text: Si7806BDN Vishay Siliconix New Product N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 12.6 0.0205 at VGS = 4.5 V 10.6 • TrenchFET Power MOSFETS • PWM Optimized • New Low Thermal Resistance PowerPAK®
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Si7806BDN
Si7806BDN-T1-E3
S-60790-Rev.
08-May-06
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Si4992EY-T1-E3
Abstract: Si4992EY
Text: New Product Si4992EY Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 75 ID (A) 0.048 at VGS = 10 V 4.8 0.062 at VGS = 4.5 V 4.2 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • High-Efficiency PWM Optimized
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Si4992EY
Si4992EY-T1-E3
08-Apr-05
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Si7806BDN
Abstract: Si7806BDN-T1-E3
Text: Si7806BDN Vishay Siliconix New Product N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 12.6 0.0205 at VGS = 4.5 V 10.6 • TrenchFET Power MOSFETS • PWM Optimized • New Low Thermal Resistance PowerPAK®
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Si7806BDN
Si7806BDN-T1-E3
08-Apr-05
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msi 7309
Abstract: No abstract text available
Text: CD4019BMS fH HARRIS S E M I C O N D U C T O R CMOS Quad AND/OR Select Gate November 1994 Features Pinout • High Voltage Type 20V Rating CD4019BMS TOP VIEW • Medium Speed Operation tPHL = tPLH = 60ns (typ.) at CL = 50pF, VDD = 10V • Standardized Symmetrical Output Characteristics
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CD4019BMS
10OnA
CD4001B
CD4019B
msi 7309
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Si4992EY
Abstract: Si4992EY-T1-E3
Text: New Product Si4992EY Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 75 ID (A) 0.048 at VGS = 10 V 4.8 0.062 at VGS = 4.5 V 4.2 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • High-Efficiency PWM Optimized
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Si4992EY
Si4992EY-T1-E3
18-Jul-08
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Si4992EY
Abstract: Si4992EY-T1-E3 Si4992EY-T1-GE3
Text: Si4992EY Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 75 ID (A) 0.048 at VGS = 10 V 4.8 0.062 at VGS = 4.5 V 4.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4992EY
2002/95/EC
Si4992EY-T1-E3
Si4992EY-T1-GE3
18-Jul-08
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Si7806BDN-T1-E3
Abstract: Si7806BDN
Text: Si7806BDN Vishay Siliconix New Product N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 12.6 0.0205 at VGS = 4.5 V 10.6 • TrenchFET Power MOSFETS • PWM Optimized • New Low Thermal Resistance PowerPAK®
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Si7806BDN
Si7806BDN-T1-E3
18-Jul-08
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