TA 3502 Search Results

LT9002

Abstract: LT5026ED LT5013 S2387-16R 3F LT6710 lt4071 GL70201 gl112
Contextual Info: Solid State Lamp Outline Dimensions Unit:mm Radiation Diagrams (Ta=25°C) (Ta=25“C) Connector £HR-3{JST Corp.) Sufted base post B3B-EH(JST corp.) Internal connection diagram n m -00 v M3 6mmdepth YeHow-green LT6610 (Notice) • In the absence ot confirmatton by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

LT569S-BHC-1-D1

Abstract: Water clear and blue color 5mm LED
Contextual Info: LT569S-BHC-1 LT569S-BHC-2 LT569S-BHC-3 HIGH BRIGHTNESS – 5mm T-1 3/4 , with Flange, Blue DATA SHEET 3502 REV.1.2 Notes: All dimensions are in mm (inch) Tolerance is ± 0.25 mm (0.01”) unless otherwise specified Electro-optical Characteristic: (Ta =25 °C)

Contextual Info: LT569S-BHC-1 LT569S-BHC-2 LT569S-BHC-3 HIGH BRIGHTNESS – 5mm T-1 3/4 , with Flange, Blue DATA SHEET 3502 REV.1.2 Notes: All dimensions are in mm (inch) Tolerance is ± 0.25 mm (0.01”) unless otherwise specified Electro-optical Characteristic: (Ta =25 °C)

12f 575

Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
Contextual Info: M3C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 270 V 1400 V 335 V 1600 V ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung

Contextual Info: Model XT38P Vishay Dale VISHAY Watch Crystals Surface Mount 32.768KHz FEATU RES • Miniature package. • Economical cost. S TA N D A R D SPEC IFIC A TIO N S Load Capacitance: 12.5pF. Operating Temperature Range: - 40°C to + 85°C. Frequency Tolerance: ± 20PPM.

EEV-FK0J152P

Abstract: EEVFK1J681M
Contextual Info: Industrial Company Surface Mount Type Aluminum Electrolytic Capacitors Table of Contents Contents Page Product System 4 Quick Guide 5 VS Series 6 HA Series 16 HB Series 23 HC Series 29 HD Series 34 FC Series 40 FK Series 46 TA Series 55 TG Series 60 TK Series

hc595a

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 -B it Serial-lnput/Serial or Parallel-O utput Shift Register w ith Latched 3 -S ta te Outputs M C54/74HC595A J SUFFIX CERAMIC PACKAGE CASE 620-10 High-Performance Silicon-Gate CMOS The MC54/74HC595A is identical in pinout to the LS595. The device

Contextual Info: FST 6,3 ‫ ן‬32 FUSES Non resettable fuses Miniature Fuses Type FST 6,3 ‫ ן‬32 20 mA - 2 A 2,5 A - 20 A time-lag T low breaking capacity Glass tube 1000 100 10 50 75 100 Standards 1 Approvals none Pre-arcing time/current characteristic at Ta 23 °C

2506L

Abstract: ER35L br 3510L BR35L bridge rectifier br 3510l 1508L 1006L R35L br 2508l 1506L
Contextual Info: BR-L 10A/15A/25A/35A SERIES Voltage Range 50 to 1000 Volts Current 10/15/25/35 Amperes SINGLE PHASE 10/15/25/35 AMPS, SILICON BRIDGE RECTIFIERS BR-L M E TA L H EAT SINK EPOXY CASE FEATURES • Plastic case with heatsink for heat dissipation .140 3.6 .120(3.05)

Lautsprecher LP

Abstract: transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028
Contextual Info: T E C H N I S C H E DO KU MEN TA TI ON Progrom m geberleil Pr T 801 Z.Nr 8721BOI—00001 . . 1 2 Bestückung und Zubehör t 1* 2.1 Beatüokung des Pr-T 801 01 (von oben linke)» Funktion 1.2.1.1. 1.2.1.2. 1.2.1*3* 1.2.1.4. 1.2.1*5. 1.2*1»S. 1.2.1.7. 1.2.1.8.

Contextual Info: GBPC W 10/15/25/35/50A SERIES GLASS PASSIVATED REVERSE VOLTAGE FORW ARD CU RREN T BRIDGE RECTIFIERS - 50 to 1000 Volts -1 0 /1 5 /2 5 /3 5 /5 0 Amp. 1»i«:« • TERMINALS/ METAL h e f to » * -a s r 1 -1^ . (23 f« : Mi Lr-=Lii ik u ta * * vS' 1 FEATURES

Contextual Info: G E SOLID STATE □1 DE I 3Ö7SDÖ1 G o n t a t Optoelectronic Specifications. Photon Coupled Isolator H11A1, H11A2, H11A3, H11A4, H11A5 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid S ta te H l l A i th ru H 11A 5 consist o f a gallium arsenide

Aeromet ii capacitor ac

Abstract: M26P4435W05 Z50P3707N Z26P3745W M23P3715M00 Z26P3775M P50G3704E ma027 Z26P4450W Z24P3750W
Contextual Info: SuperMef A 0 5 - 1 7 ' - 2 7 M E TA LLIZE D P O LY P R O P Y LE N E F ILM C A P A C ITO R S — M etal Case F eatures • Oval and round case styles • Up to 100°C operation End Spray Tab Margin • V oltage range of 240VAC to 525VAC Single and dual capacitance

TIL Display

Contextual Info: OPERATING MANUAL Industrial Products A DIVISION OF NORTH AMERICAN AVIATION, I NC. 3 5 8 4 W IL S H IR E BOULEVARD, LOS ANG ELES 5, CALIFORNIA 1336 OPERATING MANUAL FOR RECOMP II The in f o r m a tio n c o n ta in e d in this m a n u a l is g e n e r a lly a p p lic a b le

transistor 3504 npn

Abstract: 026 pnp
Contextual Info: JEDEC TRANSISTORS continued a. >1- S' > o LÜ O > a t/t e X «O e < _u LU > X SO C E X < e o (O £ +r-e • lA Ui ÜJ I< oc O Ü. o > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU fT min (MHz) High speed saturated switches f B

2219a

Abstract: 2218A 2n h 2222a cc 3053 2N4047 npn 2907A transistor 2N 2297 transistor 3504 npn 2222 NPN
Contextual Info: JEDEC TRANSISTORS continued > o LÜ O > a LU I< oc t/t e X «O e < _u o X SO C E ÜJ Ü. S' < e o > X (O £ +r-e • lA Ui O > ÍT a. X ta £ o o n o o o ir> C-vl II ra h- @ PACKAGE P O L A R IT Y LU a. >1- fT min (MHz) High speed saturated switches f B

h1n208

Contextual Info: HIN202E thru HIN241E S e m ico n d u cto r D a ta s h e e t D e c e m b e r 1998 F ile N u m b e r 4 3 1 5 .3 Features • • • • The HIN202E-HIN241E family of RS-232 transmitters/receivers interface circuits meet all EIA high­ speed RS-232E and V.28 specifications, and are particularly

GE 4N35

Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
Contextual Info: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e

wd508

Abstract: 5250J smwd-10200 smwd-20200 SOL14 SMWD-108
Contextual Info: surface mount V , Wee DIP LUMPED CONSTANT 9l1?i SLO “Si PASSIVE DELAY LINE _ J # A n a lo g in p u t and o u tp u t # D e la y s s ta b le and p recise # 1 4 -p in W e e D IP p a c k a g e . 2 0 0 high} # A v a ila b le in d elay s fro m 1ns to 2 5 0 n s

diode ru4d

Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Contextual Info: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r

LR kbpc3510

Abstract: kbp 3510 kbu808 Rectifier s01cc KBU80B C3502-AKBPC3508 pc 2501 kbp02 BPC802 KBU diode bridge
Contextual Info: < § Silicon Bridge Rectifiers 1 Amp Silicon Bridge Rectifiers D F 005-D F10 Series. S in g le -p h a se , fu ll-w a v e b rid ge re ctifiers in 4 -p in D u a l-in -L in e pa ckages. 50 V to 10 0 0 V VRRM . 1A (l0 ), 3 0 A p e a k o n e -h a lf c y c le surge. E poxy p a c k a g e has U L 9 4 V -0 flam e re ta rd a n t rating. Lead s o ld e ra b le per M IL -S T D

TP4057

Abstract: 4057D TLO 81 SRA3
Contextual Info: 155 Mbps ATM SAR CO N T R O L L E R P R E LI M IN A R Y WITH ABR S U P P O R T FOR PCI-BASED N E T W O R K I N G AP PLI CA TI ON S INFORM ATIO N IDT77252 KEY FE A TU R ES • F u ll-d u p le x S e g m e n ta tio n an d R e a s s e m b ly S A R at 155 M b p s "w ire -s p e e d " (3 1 0 M b p s a g g re g a te s p e e d ).

Contextual Info: 19-3502; Rev 4; 5/06 125V/2A, High-Speed, Half-Bridge MOSFET Drivers Features The MAX5062/MAX5063/MAX5064 high-frequency, 125V half-bridge, n-channel MOSFET drivers drive highand low-side MOSFETs in high-voltage applications. These drivers are independently controlled and their

2100ib

Contextual Info: 19-3502; Rev 1; 1/05 125V/2A, High-Speed, Half-Bridge MOSFET Drivers Features The MAX5062/MAX5063/MAX5064 high-frequency, 125V half-bridge, n-channel MOSFET drivers drive highand low-side MOSFETs in high-voltage applications. These drivers are independently controlled and their