TA 2040 AMPLIFIER
Abstract: No abstract text available
Text: Linear Amplifier LM2109 Product Features Application • GaAs MESFET • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / ROHS Standard • PCS Repeater • RF Sub-Systems
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LM2109
CP-16
CP-16)
LM0105
LM0905
LM1009
LM2105
LM2305
LM0909
TA 2040 AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: Linear Amplifier LM2109 Product Features Application • GaAs MESFET • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / RoHS Standard • PCS Repeater • RF Sub-Systems
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LM2109
CP-16
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cp16a
Abstract: No abstract text available
Text: Linear Amplifier LM2109-L Product Features Applications • GaAs MESFET • No matching circuit needed • High IP3 • Surface Mount Hybrid Type & Reel Packing • Small Size • Alumina Substrate • Pb Free / RoHS Standard • PCS Repeater • RF Sub-Systems
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LM2109-L
CP-16A
cp16a
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2SB1122
Abstract: 2SD1622
Text: Ordering number:2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications Package Dimensions • Voltage regulators relay drivers, lamp drivers, electrical equipment. unit:mm 2038 [2SB1122/2SD1622]
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2SB1122/2SD1622
2SB1122/2SD1622]
2SB1122
2SB1122
2SD1622
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2SD1622
Abstract: 2SB1122 ITR08877 ITR08878
Text: Ordering number:ENN2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications Package Dimensions • Voltage regulators relay drivers, lamp drivers, electrical equipment. unit:mm 2038A [2SB1122/2SD1622]
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ENN2040A
2SB1122/2SD1622
2SB1122/2SD1622]
25max
2SB1122
2SD1622
2SB1122
ITR08877
ITR08878
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7905 SO8
Abstract: AN 7591 POWER AMPLIFIER MRFIC1808 MRFIC1808DMR2 MRFIC1808R2 SO-8 4425 8856 micro 9942 SO8 t 06 marking 59 601 508 so8
Text: Order this document by MRFIC1808/D MRFIC1808 LAST SHIP 18/06/00 1.9 GHz GaAs Low Noise Amplifier • • • • • • • • 1.9 GHz GaAs LOW NOISE AMPLIFIER SEMICONDUCTOR TECHNICAL DATA 19 dB Typ Gain MRFIC1808 , 18 dB (MRFIC1808DM) 8 1.6 dB Typ Noise Figure
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MRFIC1808/D
MRFIC1808
MRFIC1808)
MRFIC1808DM)
MRFIC1808,
MRFIC1808DM
M1808
7905 SO8
AN 7591 POWER AMPLIFIER
MRFIC1808
MRFIC1808DMR2
MRFIC1808R2
SO-8 4425
8856 micro
9942 SO8
t 06 marking 59
601 508 so8
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GJM1555C1H180GB01
Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
GJM1555C1H180GB01
GRM1555C1H180JA01
C11 inductor
RC0402FR-07-1K2RL
RO4350B
Rogers RO4350B microstrip
phemt .s2p
25c2625
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Die Attach and Bonding Guidelines
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Text: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in
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HMMC-5033
HMMC-5033
HMMC-5040
HMMC-5618
HMMC-5618
HMMC-5033/rev
Die Attach and Bonding Guidelines
GaAs MMIC ESD, Die Attach and Bonding Guidelines
long range gold detector circuit diagram
agilent HMMC
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transistor motorola 351
Abstract: MRFIC1808 MRFIC1808DMR2 2C46
Text: Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT), Japan’s Personal Handy System (PHS) and the emerging North American
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MRFIC1808/D
MRFIC1808
MRFIC1808DM
transistor motorola 351
MRFIC1808
MRFIC1808DMR2
2C46
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AN 7591 POWER AMPLIFIER
Abstract: motorola 6828 MRFIC1808 7905 SO8 marking 9448 MRFIC 917 9631 MOTOROLA CMOS 4560 motorola
Text: MOTOROLA Order this document by MRFIC1808/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),
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MRFIC1808/D
MRFIC1808
MRFIC1808/D*
AN 7591 POWER AMPLIFIER
motorola 6828
MRFIC1808
7905 SO8
marking 9448
MRFIC 917
9631 MOTOROLA
CMOS 4560 motorola
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MRFIC1808
Abstract: MRFIC1808R2 PF 0849 B 4093 motorola motorola 8822 MRFIC 917 ta 8892 an
Text: MOTOROLA Order this document by MRFIC1808/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),
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MRFIC1808/D
MRFIC1808
MRFIC1808
MRFIC1808R2
PF 0849 B
4093 motorola
motorola 8822
MRFIC 917
ta 8892 an
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
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MD7P19130H
MD7P19130HR3
MD7P19130HSR3
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Untitled
Abstract: No abstract text available
Text: ARCHIVEDBYFREESCALESEMICONDUCTOR,INC.2005 Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),
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MRFIC1808/D
MRFIC1808
MRFIC1808DM
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MOTOROLA 935
Abstract: transistor motorola 351 MRFIC1808 MRFIC1808DMR2 Motorola 0936 2C46 motorola marking 723 m1808
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRFIC1808/D MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems PCS applications such as Digital European Cordless Telephone (DECT),
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MRFIC1808/D
MRFIC1808
MRFIC1808DM
MOTOROLA 935
transistor motorola 351
MRFIC1808
MRFIC1808DMR2
Motorola 0936
2C46
motorola marking 723
m1808
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Untitled
Abstract: No abstract text available
Text: 17.7-32 GHz Power Amplifier HMMC-5033 Features • 26 dBm Output P -1dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching Chip Size: Chip Size Tolerance: Chip Thickness: 2.74 x 1.31 mm (108 × 51.6 mils) ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)
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HMMC-5033
HMMC-5033
HMMC-5040
HMMC5618
HMMC-5618
HMMC-5033/rev
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2SC3571
Abstract: 400V to 5V DC Regulator npn transistors 400V 3A
Text: SavantIC Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier
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2SC3571
O-220Fa
O-220Fa)
VCCA150V;
2SC3571
400V to 5V DC Regulator
npn transistors 400V 3A
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400V voltage regulator
Abstract: 2SC3571 DC DC converter 5v to 400V npn transistors 400V 3A DC DC converter 400V
Text: Inchange Semiconductor Product Specification 2SC3571 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier
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2SC3571
O-220Fa
O-220Fa)
VCC150V;
400V voltage regulator
2SC3571
DC DC converter 5v to 400V
npn transistors 400V 3A
DC DC converter 400V
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MMIC Amplifier A08
Abstract: No abstract text available
Text: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)
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HMMC-5032
1GG6-8009
HMMC-5032
HMMC-5040
20-40m
5989-6209EN
MMIC Amplifier A08
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1gg6
Abstract: No abstract text available
Text: Agilent HMMC-5032 17.7–32 GHz Amplifier 1GG6-8009 Data Sheet Features • • • • • 22 dBm output P –1 dB 8 dB gain 50 Ω input/output matching Small size Bias: 4.5 volts, 250 mA Chip size: Chip size tolerance: Chip thickness: Pad dimensions: 1370 x 770 µm (53.3 x 30.0 mils)
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HMMC-5032
1GG6-8009
HMMC-5040
HMMC-5618
5989-6209EN
1gg6
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Untitled
Abstract: No abstract text available
Text: Thp\ mi.TM H EW LETT PACKARD 20-40 GHz Amplifier Technical Data HMMC-5040 Features • Large Bandwidth: 20 - 44 GHz Typical 21-40 GHz Specified • High Gain: 22 dB Typical • Saturated Output Power: 21 dBm Typical • Supply Bias: < 4.5 volts @ < 300 mA
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HMMC-5040
5965-5444E
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XTR 513
Abstract: 6MB 125 S-1 2 0 l
Text: Magnetic disk tCs Read/Write Amplifier for FDD BH6625FS •The BH6625FS is a 4-m ode read/ write 1C designed for flo p p y disk drives, and has an active fitter that can be set according to transfer rate. Any of multiple write current settings can be selected, and inner edge/outer edge switch
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BH6625FS
BH6625FS
SSOP-A24
XTR 513
6MB 125 S-1 2 0 l
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Untitled
Abstract: No abstract text available
Text: W KSÌ HEWLETT minMPACKARD 17.7-32 GHz Power Amplifier Ifechnical Data HMMC-5033 F eatures • 26 dBm Output P ] ^ at 28 GHz • High Gain: 18 dB • 50 Q, Input/Output M atching • Sm all Size D escription The HMMC-5033 is a MMIC power amplifier designed for use in
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HMMC-5033
HMMC-5040
HMMC-5618
1998H
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Untitled
Abstract: No abstract text available
Text: minMPACKARD W KSÌ HEWLETT 17.7- 32 GHz Amplifier Ifechnical Data HMMC-5032 F e a tu re s • 22 dBm O utput P ] (1]5 • 8 dB Gain. • 50 Q. Input/O utput M atching • S m all S iz e • B ia s: 4.5 V olts, 250 mA D escrip tion The HMMC-5032 is a MMIC power
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HMMC-5032
HMMC-5032
HMMC-5040
HMMC-5618
1998Hewlett-Packard
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Untitled
Abstract: No abstract text available
Text: H EW LETT 1"KM P A C K A R D 2 0 - 4 0 GHz Amplifier Technical Data HMMC-5040 Features • Large Bandwidth: 20 - 44 GHz Typical 21-40 GHz Specified • High Gain: 22 dB Typical • Saturated Output Power: 21 dBm Typical • Supply Bias: < 4.5 volts @ < 300 niA
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HMMC-5040
HMMC-5040
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