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    TA 2025 B Price and Stock

    IQD Frequency Products LFXTAL020256Bulk

    Crystals 18MHz 30pF -20C 70C
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    Mouser Electronics LFXTAL020256Bulk 852
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    IQD Frequency Products LFXTAL022025Bulk

    Crystals 29.4912MHz 18pF -10C 60C
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    Carling Technologies LTA201-TA-B/125N

    Switch Rocker OFF None ON SPST Quick Connect Rocker 15A 250VAC 559.27VA 100000Cycles Bulk
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    Onlinecomponents.com LTA201-TA-B/125N 50
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    ASSMANN WSW components GmbH AWHW20G-0202/TA-B

    Box Header - 20 Pin.
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    Onlinecomponents.com AWHW20G-0202/TA-B 16
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    Carling Technologies LTA205-TA-B/250N

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    TA 2025 B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T718N

    Abstract: T1189N T1509N T1989N T358N T508N T588N T879N
    Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung [°C] [A] [W] 25 302 431 482 609 943 1225 1406 1791 2025 2910 290 413 462 583


    Original     		PDF

    IC 2025

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    smd diode af3

    Abstract: SMD IC 2025 DIODE BAT 85 SMD PACKAGE PLCC28R IC 2025 PEB2025 PEB2025-N PEB2025-P PL-CC-28-R 2025N
    Text: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ISDN Exchange Power Controller IEPC PEB 2025 CMOS IC Features ● Supplies power to up to four transmission lines


    Original     		P-LCC-28-R P-DIP-22 smd diode af3 SMD IC 2025 DIODE BAT 85 SMD PACKAGE PLCC28R IC 2025 PEB2025 PEB2025-N PEB2025-P PL-CC-28-R 2025N PDF

    AN1955

    Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to


    Original     		MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 AN1955 MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA PDF

    C5750X7S2A106KT

    Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501 PDF

    CW12010T0050GBK

    Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
    Text: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20160H MRF8P20160HSR3 CW12010T0050GBK CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550 PDF

    CW12010T0050GBK

    Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


    Original     		MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


    Original     		MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to


    Original     		MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 10yees, MRF7P20040HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY18108-11: 0.4-2.7 GHz SP9T Antenna Switch Module Applications • Dual-mode handsets GSM/EDGE, Quad/TD-SCDMA or WCDMA dual mode • Low-cost, small footprint FEMs Features • Supports quad-band GSM and TD-SCDMA or GSM and WCDMA dual-mode for 2G and 3G systems


    Original     		SKY18108-11: 201323H PDF

    MRF8P20140WH/HS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS PDF

    201323H

    Abstract: SKY18108-11 DCS-1800 SP9T ntc 1710
    Text: DATA SHEET SKY18108-11: 0.4-2.7 GHz SP9T Antenna Switch Module Applications • Dual-mode handsets GSM/EDGE, Quad/TD-SCDMA or WCDMA dual mode • Low-cost, small footprint FEMs Features • Supports quad-band GSM and TD-SCDMA or GSM and WCDMA dual-mode for 2G and 3G systems


    Original     		SKY18108-11: 201323H 201323H SKY18108-11 DCS-1800 SP9T ntc 1710 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20161HS MRF8P20161HSR3 PDF

    VARTA 170 dk

    Abstract: energy meter circuit diagram em 301 l and t make CR-P2 varta VARTA 250 dk CH-8952 VARTA crp2 lithium 6 v varta v 60 r diode catalogue VARTA 60 dk TAG 8952
    Text: Varta Micro Batteries Pr i m a r y L i t h i u m C e l l s Primary Lithium Cells Sales Program and Technical Handbook Contents 1. General Information, 3 - 8 1.2 Constructions of Lithium Cells, 4 - 5 1.3 Characteristics and Applications, 6 1.4 Applications for Primary Lithium Cells, 7


    Original     		E-08034 F-92403 P-1100 VARTA 170 dk energy meter circuit diagram em 301 l and t make CR-P2 varta VARTA 250 dk CH-8952 VARTA crp2 lithium 6 v varta v 60 r diode catalogue VARTA 60 dk TAG 8952 PDF

    MSM5052

    Abstract: MSM5052-02 32-0042 lcd N7 k4k4
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		J2E2011-27-Y3 MSM5052-02 MSM5052-02 MSM5052-02IC 5612LCD 90BT-5 25pFS1S2S1S2 11128Hz S1S212 MSM5052 32-0042 lcd N7 k4k4 PDF

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT PDF

    bt 2025

    Abstract: transistor bc 541 2SK334 TRANSISTOR IFW transistor Bc 542 60N11
    Text: S ANYO SEMICONDUCTOR CORP 3SE D 7^707^ 00CHEE1 1 . T-29-25 —— N-Channel Junction Silicon FET 2025 Capacitor Microphone Applications • 933C FEA TU RE •Because it has an ultra-compact outline, sets can be made compact. A BS O L U T E M AXIM U M RATINGS/Ta = 25° C


    OCR Scan     		T-29-25 T-91-20 SC-43 bt 2025 transistor bc 541 2SK334 TRANSISTOR IFW transistor Bc 542 60N11 PDF

    TT 2206

    Abstract: cvr 440 2SK595
    Text: 2SK595 2025 N9- Y * \ ,a * B c,») - - M t t t * * J l t %’ •FBET7ot^ «S. Assolute Ha» 1nun k A tin ça A * - - 5 #C un 1 1 •20 10 1 100 12S -55-025 r - k - r u o W£ V c o o r- > m t 1G ru !0 Po Tj TtlB s a n a ta * E l e c t x i c a l C h *X A ct- ri*tic*/T »- 2 S #C


    OCR Scan     		2SK595 2SK595U VCC14 23s24 3097JN TT 2206 cvr 440 2SK595 PDF

    clinical Thermometer

    Abstract: Thermometer clock LCD ic xl 1507 MSM5052-02 lcd N7 Linear Thermometer ic 3.5-DIGIT lcd IC 2025 Thermometer ic oki c301
    Text: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL DESCRIPTION The M SM 5052-02 is an IC, equipped w ith both clinical therm om eter and clock functions. This device uses a therm istor as its sensing elem ent and displays tem peratures in the range of 32 °


    OCR Scan     		MSM5052-02 MSM5052-02 80-PIN QFP80-P-1420-K QFP84-P-1420-BK clinical Thermometer Thermometer clock LCD ic xl 1507 lcd N7 Linear Thermometer ic 3.5-DIGIT lcd IC 2025 Thermometer ic oki c301 PDF

    thermistor 103

    Abstract: thermistor 10k 25 3435 MSM5052-10 3.5-DIGIT lcd IC 2025 Thermometer clock LCD ic Digital alarm clock ic with 28 pin 158T MSM5052-10GS-BK MSM5052-10GS-K
    Text: O K I Semiconductor M S M 5 5 2 - 1 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION T he MSM5052-10 is a 4-bit lo w -p o w e r m icrocontroller, m a n u fa ctu re d u sin g CM OS p rocess technology, a n d is eq u ip p e d w ith a d ig ital th erm o m eter, a n ala rm w ith a sn o o ze fu n ctio n , an d


    OCR Scan     		MSM5052-10 MSM5052-10 80-PIN QFP80-P-1420-K QFP84-P-1420-BK thermistor 103 thermistor 10k 25 3435 3.5-DIGIT lcd IC 2025 Thermometer clock LCD ic Digital alarm clock ic with 28 pin 158T MSM5052-10GS-BK MSM5052-10GS-K PDF

    2SK595

    Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


    OCR Scan     		DDCH230 T-29-25 T-91-20 SC-43 2SK595 TRANSISTOR IFW transistor BC 552 PDF

    VLN 2003a

    Abstract: bt 2025 2SK595
    Text: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b D D C H 230 T“29“25. 2025 .Vafc-.l'^ ,1 T N-Chanrrel Junction Silicon FET Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic


    OCR Scan     		7tn707b D0CH230 T-29-25 T-91-20 SC-43 VLN 2003a bt 2025 2SK595 PDF

    UTC2025

    Abstract: UTC 2025 uln 2800 data Avantek* UTO AVANTEK uto Avantek* UTC 2025 UTO 2025 AVANTEK utc UTC 2025 B MLPI
    Text: MME ì> m u m ib b O a v a n tek 00000=13 1 B A V A U T O /U T C 2025 S eries T h in -F ilm C a s c a d a b le A m p lifie r 100 to 2000 M H z • • AVANTEK INC FEATURES APPLICATIONS • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ


    OCR Scan     		EL164 UTC2025 UTC 2025 uln 2800 data Avantek* UTO AVANTEK uto Avantek* UTC 2025 UTO 2025 AVANTEK utc UTC 2025 B MLPI PDF

    Untitled

    Abstract: No abstract text available
    Text: c r 'iv iW .= .,A|r \ CONTROL PANEL UNITS REMOTE CONTROL UNITS CUSTOM MADE KEYBOARD CONTROL PANEL UNITS MT SWITCH SHEET TYPE (m t sw SWITCH SHEET TYPE t BUILT-IN RUBBER CONTACT TYPE METAL DOME TYPE CONDUCTIVE RUBBER TYPE 2S d'A$Y7‘ TACTILE FEELING TYPE


    OCR Scan     		i19ihtl 400gf PDF