T5N 400 Search Results

T5N 400

Abstract: 14PCT070TR4 14PCT070T4-RYGG 013100
Contextual Info: LTR R EVISION - R ELEA SED A RSVD P ER ECR DATE APPD 0 8 -0 6 -9 8 1 1 1 0 9 9 -S A 0 3 1 1 -1 0 -9 9 CM .400 .100 .1 0 0 - 1 0.020 TYP -o o o -o o o o .100 FOOT PRINT MIX COLORS ALL LEDS SAME COLOR 14PCT070T4-RYGG 14PCT070TR4 "t- BRIG H TN ESS CODE T4, T5. T5N

Contextual Info: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

posted CAS jedec 1999

Contextual Info: PRELIMINARY 64Mb: x4, x8 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

Diodes Incorporated 17-33

Abstract: T6N 700 DQ66 L9D12
Contextual Info: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

Contextual Info: PreLIMINARY Information L9D120G64BG4 2.0 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

Contextual Info: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks MT46V8M16 – 2 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400)

Contextual Info: 128Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 Banks MT46V16M8 – 4 Meg x 8 x 4 Banks MT46V8M16 – 2 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400)

Diodes Incorporated 17-33

Abstract: CKE 2009 cke02 RING TERM M6 2,5mm2
Contextual Info: PreLIMINARY Information L9D125G80BG4 2.5 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

Contextual Info: PreLIMINARY Information L9D110G64BG4 1.0 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Plastic Ball Grid array (PBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

MT49H16M18C

Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

RLDRAM mt49h

Abstract: MT49H16M18C
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

smd transistor marking HT1

Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
Contextual Info: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

57256

Abstract: DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4
Contextual Info: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets/

BA 5053 circuit diagram

Abstract: BA 5053
Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

DDR266B

Abstract: MT46V128M8 MT46V256M4 MT46V64M16 MT46V64M16TG-75
Contextual Info: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V256M4 – 64 MEG X 4 X 4 BANKS MT46V128M8 – 32 MEG X 8 X 4 BANKS MT46V64M16 – 16 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

Contextual Info: PRELIMINARY 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks MT46V8M16 - 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html

Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 banks MT46V128M8 – 32 Meg x 8 x 4 banks MT46V64M16 – 16 Meg x 16 x 4 banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = VDDQ = +2.6V ±0.1V (DDR400)

MT46V64M16P-6TA

Abstract: 1gbDDRx4x8x16
Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 Banks MT46V128M8 – 32 Meg x 8 x 4 Banks MT46V64M16 – 16 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)

MT46V64M16P-6TA

Abstract: 256M4 DDR266B DDR333B DDR400 DDR400B MT46V128M8 MT46V256M4 MT46V64M16 PC3200
Contextual Info: 1Gb: x4, x8, x16 DDR SDRAM Features DDR SDRAM MT46V256M4 – 64 Meg x 4 x 4 Banks MT46V128M8 – 32 Meg x 8 x 4 Banks MT46V64M16 – 16 Meg x 16 x 4 Banks Features Options • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V DDR400

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

MT46V32M16TG-xx

Contextual Info: ADVANCE‡ 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 Meg x 4 x 4 banks MT46V64M8 – 16 Meg x 8 x 4 banks MT46V32M16 – 8 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets