IC LA 4127
Abstract: LA 4127 20 pin LA 4127 T3j 50 T2711
Text: OHMITE Power Tap Switches M anufacturing Com pany High Current, Non-Shorting Type A fi I , ’.T T y p ic a l T a n d e m M o d e l T y p ic a l C e r a m ic S ty le Features • “Slow-breaking, Q uick-m ake” a ction proved best for sw itching AC current.
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DCmm-37P
Abstract: K-136 K136
Text: Solder Cup D D*M How to Order High Rel - Solder Cup Connectors contacts are non-removable Receptacles (Includes Socket Contacts) With .120" Through Mounting Holes Number of Contacts (Shell Size) Standard 9(E) 15(A) DEM9S DAM15S DBM25S 25 (B) 37 (C) 50 (D)
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DAM15S
DBM25S
DBME25S
DBMME25S
M24308/1-1
DBMM25S
DDM50S
M24308/1-2
M24308/1-3
DCMM37S
DCmm-37P
K-136
K136
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T3j 50
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO} j DE | TCHTESD DQG5372 □ | SSR ZERO-CROSSTYPE C H A R A C T ER IST IC 4* S s1 «— Drop Out Voltage Drop Out Current V fd è Turn-off time Isolation Resistance . VDR = Rated • . v - 0.5 - 1 - . - I tm = 6 A Vw(RMS)=100Vrms
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DQG5372
100Vrms
100Vrms
20jCC
T3j 50
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MMBR930
Abstract: pe sot-23
Text: T-3J-/? 12E D § b3h7aSM 0007270 3 | MOTORCLA SC MOTOROLA XSTRS/R F _ SEMICONDUCTOR TECHNICAL DATA MMBR930 The RF Line N P N Silicon High Frequency Transistor . designed for thick and thin-film circuits using surface mount compo nents and requiring low-noise, high-gain signal amplification at frequencies
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MMBR930
MMBR930
pe sot-23
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL C O P Y R I G H T 2 00 0 RIGHTS LOC R E V I S IONS RESERVED. DESCRIPTION REVISED PER ECO- •0 I 3 1 3 2 13JUL201 I AREA MATING AREA MEETS THE PERFO R M A N C E R E O U I R E M E N T S OF PRODUCT SPECIFICATION
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13JUL201
7JUL00
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MH84
Abstract: MBM2212
Text: aw > <iM 9W > iow-des-dKj < i¿ rta n > (low-dw-iai) <¿¿rt (eow-d&t-dia) 1 ?M ¿ ¿ 5 5 S -S « X I * S v» T m ^ ^ . « S* * » * ^ • * O' > i P * Ve O r .« í *} H- tr 5 9*»* i » * * « H a a 9~ V» á » Si* - Dua l P o r t RAM í£gJttlllllll111 ill II ill
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MB842IÂ
MBW21/22)
MB843I/32)
MH842I)
MB8422)
DIP-48P-M02)
MBS422>
OJP-52P-M01)
DS05-30105-6
MB8421/8422
MH84
MBM2212
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RCA-2N2270
Abstract: 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor
Text: E SOLID 3875081 STATE G E Öl SO LID STATE » E | 3Ö750Ö1 0D170T7 01E D T - l f - i l 17097 High-Speed Power 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS
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0D170T7
2N2270
RCA-2N2270
92CS-III79RI
2N2270
2N2270 RCA
rca 2N2270
transistor 2n2270
SILICON TRANSISTOR FS 2
RCA Solid State Power Transistor
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957b
Abstract: No abstract text available
Text: THI S DRAWI NG IS UNPUBL I SHED. RELEASED FOR PUBLI CATI ON ALL COPYRI GHT 2 00 0 RI GHTS LOC DI ST R E V I S IONS RESERVED. DE S C R I P T I O N REVISED PER ECO- DWN •0 I 3 1 3 2 APVD 13 JUL201 I AREA MATING AREA MEETS THE P E R F O R M A N C E R E O U I R E M E N T S OF
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JUL201
07DEC04
957b
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Untitled
Abstract: No abstract text available
Text: For assistance or to order, call 800 S31-S782 Application Notes Mechanical Outline Product Selector Guide PT79SR100 -1.5 AMP NEGATIVE STEP-DOWN INTEGRATED SWITCHING REGULATOR • • ® H igh Efficiency >85% Self-Contained Inductor Short Circuit Protection
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S31-S782
PT79SR100
PT79SR100
RS232
f40-60
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AL 2450 dv
Abstract: C450PM C450 SCR1640 LT 428 BP107
Text: POWEÜEX C450 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 PhSSG Control SCR . 1640 Amperes Average 1600 Volts C450 Phase Control SCR
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BP107,
f0000
P-168
AL 2450 dv
C450PM
C450
SCR1640
LT 428
BP107
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} ai 9097250 TOSHIBA DISCRETE/OPTO 39C 01871 SEMICONDUCTOR t e c h n ic a l O 1 5 0 ~ 1 7 5MI z d e I ^ o t t e s o dddiû?! e D 3*C3t h ÿ y - ? * * TO SH IBA T RA N SISTO R 2S0998 SILICON NPN EPITAXIAL PLANAR data ( fiSEfcìfUB )
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2S0998
175MH*
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mj413
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F ia E D I b3fa?55M M | MJ413 MJ423 MJ431 MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH-VOLTAGE NPN SILICON TRA N SISTO RS 10 AM PERE POWER TRAN SISTO RS NPN SILICON . . . designed fo r m edium -to-high voltage inverters,converters, regulators and sw itching circuits.
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MJ413
MJ423
MJ431
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Untitled
Abstract: No abstract text available
Text: HD74HCT374 HD74HCT534 These devices are positive # Octal D-type Flip-Flops with 3-state outputs # Octal D-type Flip-Flops (with inverted 3-state outputs) edge triggered flip-flops. The | I PIN ARRANGEMENT ^ »H D 74H C T 374 difference between H D 7 4 H C T 3 7 4 and H D 7 4 H C T 5 3 4 is only
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HD74HCT374
HD74HCT534
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FCK 1
Abstract: circle surround IC digital to analog tv converter ic m65850p MITSUBISHI Digital Echo delay 8 ICs Operation Amplifier delay echo circuit diagram MITSUBISHI Digital Echo 4P4 amplifier
Text: MITSUBISHI SOUND PROCESSOR ICs * » » g. Sg-'JM0 L M 6 5 8 5 0 P DIGITAL ECHO DIGITAL DELAY DESCRIPTION The M65850P is an CMOS 1C developed for producing echo effects added to voice signals picked up by microphone for karaoke applications. The 1C is optimum to provide radio cassette tape recorders,
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M65850P
M65844P,
M65850P
M65844P
M65844P
M65850P.
FCK 1
circle surround IC
digital to analog tv converter ic
MITSUBISHI Digital Echo delay 8 ICs
Operation Amplifier
delay echo circuit diagram
MITSUBISHI Digital Echo
4P4 amplifier
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M51489L
Abstract: fca 173 mitsubishi j 170 video clamp agc
Text: MITSUBISHI ICs AV COMMON I 1324^0213 Q D l í b l t i M I T S U B I S H I E L E K T 3 T • IVI51 489L M I T 2 ( L I N E A R ) b 2 E D VIDEO AGC DESCRIPTION The M51489L is a semiconductor integrated circuit designed as video AGC for video equipment applications.
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ti24TflSb
M51489L
M51489L
fca 173
mitsubishi j 170
video clamp agc
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74HC4022
Abstract: No abstract text available
Text: M54HC4022 M74HC4022 SCS-THOMSON lILKèTTISORDD ! OCTAL COUNTER/DIVIDER • HIGH SPEED fMAX = 44 MHz TYP. at VCc = 5V ■ LOW POWER DISSIPATION ICC = 4 tiA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V n IH = V n i L= ^ 0/o ^CC (MIN). ■ OUTPUT DRIVE CAPABILITY
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M54HC4022
M74HC4022
4022B
M54HC4022
M74HC4022
M54/74HC4022
74HC4022
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R HARRIS HCSOO RCA GE PRELIMINARY INTERSIL HCS04 High Reliability, Radiation Hardened High Speed CMOS SOS Gates with CMOS Compatible Inputs HCS08 Aerospace Class S Screening HCS27 Radiation Features HCS02 HCS32 • Radiation hardened to 200k or 1 M RADs Si
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HCS04
HCS08
HCS27
HCS02
HCS32
HCS32MS
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON s ^ IJOMOiêS TS27M4C,1,M LOW POWER QUAD CMOS OP-AMPs • EXCELLENT PHASE MARGIN ON CAPACI TIVE LOADS ■ SYMETRICAL OUTPUT CURRENTS ■ LOW OUTPUT DYNAMIC IMPEDANCE ■ THE TRANSFER FUNCTION IS LINEAR ■ PIN TO PIN COMPATIBLE WITH STANDARD
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TS27M4C
TL084
-LM324)
TS27M
100pF
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245481
Abstract: A21A2 cenelec relay 245.481 schema power supply double ic relais STPI 31A2 ltnb 9743a 13L-0
Text: M O D U L E S T E M P O R IS E S ELECTRONIQUES A L 'E N C L E N C H E M E N T ET AU D E C L E N C H E M E N T ELECTRO NIC T IM E DELAY M O D U L E S O N OPERATE A N D O N RELEASE 0,2 seconde à 50 minutes C A R A C T E R IS T IQ U E S GENERALES GENERAL C H A R A C T E R IS T IC S
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15CA
Abstract: No abstract text available
Text: r DESCRIPTION: ABOVE AND BELOW P.C.B., DECK AND PUSH—ROD LOCATION ARE AS VIEW BY USER. PRODUCT NO. 7 4 4 4 3 —XXXXX SOLDER TAIL EJ. HEADER ASSY K 921 4Û -X X X 5 T A N D -0 F F HEIGHT DIM ” L" PUSH ROD LOCATION OOOCA ABOVE RIGHT r/ a 000 OOCA 001CA
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92S69.
2/13/9B
15CA
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motorola transistor cross reference
Abstract: 75u50 2N5947 Motorola 31-00 MM8012 motorola diode cross reference mm-8012 VHF RF AMPLIFLER noise diode noise diode generator
Text: D E I t,3 b ? 2 S 4 D 0 7 ötiD? t. "|“ MOTOROLA SC -CXSTRS/R F> f ï MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N5947 T h e R F L in e H IG H F R E Q U E N C Y T R A N SIS T O R N P N S IL IC O N NPN S IL IC O N H IG H F R E Q U E N C Y T R A N S IS T O R
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2N5947
MM8012.
200MHz
motorola transistor cross reference
75u50
Motorola 31-00
MM8012
motorola diode cross reference
mm-8012
VHF RF AMPLIFLER
noise diode
noise diode generator
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flSS455
irf*234 n
IRFBE40
IRF540 p-channel MOSFET
IRFBG40
irf540 800v
irfz24 mosfet
IRFCG50
IRFC034
HEXFET Guide
international rectifier d10
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M5M5256-12L
Abstract: M5M5256
Text: MITSUBISHI LS Is M5M5256BVP,RV-70L,-85L,-10L,-12L,-15L, -70LL,-85LL,-10LL,-12LL,-15LL 262144-BIT 32768-WORD BY8-BIT CMOS STATIC RAM DESCRIPTION Tho M5M5256BVP, RV are 262144-bit CMOS static RAMs organized as 32768-words by 8-bit. They are fabricated using
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M5M5256BVP
RV-70L
-70LL
-85LL
-10LL
-12LL
-15LL
262144-BIT
32768-WORD
M5M5256BVP,
M5M5256-12L
M5M5256
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LR4089B
Abstract: LR4089BN 12 Mhz in crystal oscillator LR4089 18-PIN sine wave inverter circuit diagram DTMF telephone Scans-00145149 LM 941
Text: SHARP LR4089B/ LR4089BN LR4089B/LR4089BN Tone Dialer LSI DESCRIPTION PIN CONNECTIONS FEATURES • Tone output : bipolar Mute output : N-channel open-drain • Uses either a standard 2-of-8 matrix keyboard or a single contact keyboard • Uses a 3.579 545 HMz color-burst crystal oscil
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LR4089B/
LR4089BN
LR4089B/LR4089BN
LR4089B/LR4089BN
LR4089B
LR4089B
fllfl07Tfl
LR4089BN
12 Mhz in crystal oscillator
LR4089
18-PIN
sine wave inverter circuit diagram
DTMF telephone
Scans-00145149
LM 941
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