T3D 55
Abstract: Diode T3D Diode T3D 55 T3D 55 diode T3D 70 diode dse16
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0402 Package Chip LED 0.35mm Height 16-216/T3D-AQ1R2TY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow
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16-216/T3D-AQ1R2TY/3T
DSE-166-W01
21-Aug-2007
T3D 55
Diode T3D
Diode T3D 55
T3D 55 diode
T3D 70 diode
dse16
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t3d 57
Abstract: T3D 88 t3d diode T3D 89 Diode T3D 57 GC5510 gc5514g paramp T3D 45 diode GC5511A
Text: LO RA L niCROülAVE-FSI SIE D • 5 5 0 0 1 3 0 G O O G M ? ! T3D ■ GaAs PARAMETRIC AM PLIFIER VARACTORS DESCRIPTION FEATURES The GC5510 series paramp varactors are diffused junction gal lium arsenide devices featuring the lowest series resistance and
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GC5510
MIL-S-19500.
t3d 57
T3D 88
t3d diode
T3D 89
Diode T3D 57
gc5514g
paramp
T3D 45 diode
GC5511A
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indium gallium arsenide phosphide
Abstract: 090Q PREAMPLIFIER TRANSIMPEDANCE optic fet C30617 C30986-010 C30986-090QC-01 C30986-350 35XL 30306 3008D2
Text: E 6 & 6 / C A N A D A / O P T OELEK I t C / € l 3030bl0 000ülb3 ID T3D * C A N A InGaAs Photodiodes C30986 Series DATA SHEET Optics For Detection of 1000 to 1700 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails
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3030bi0
C30986
T-W-61
l-1075
C30986-XXXQC-YY
C30986-XXX
14-pin
C30617
indium gallium arsenide phosphide
090Q
PREAMPLIFIER TRANSIMPEDANCE optic fet
C30986-010
C30986-090QC-01
C30986-350
35XL
30306
3008D2
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Untitled
Abstract: No abstract text available
Text: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold
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SPT78
10-BIT,
SPT7810
10-bit
00022bb
SPT7810
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parity check mark space
Abstract: 65SC51 T3D 62 G65SC51 G65SC51-1 G65SC51-2 G65SC51-3 G65SC51-4
Text: C U D / S E M I C O N D U C T O R DIV SSE D • lfl31b4D Ü G Ü 1 7 D 3 T3D * C A L T- 75-37-OS A G65SC51 CMD Microcircuits CMOS Asynchronous Communications Interface Adapter Features General Description • CMOS process technology for low power consumption
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31b4D
T-75-37-0Ã
G65SC51
65SC51
parity check mark space
65SC51
T3D 62
G65SC51
G65SC51-1
G65SC51-2
G65SC51-3
G65SC51-4
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2N5377
Abstract: No abstract text available
Text: AL LE GR O M I C R O S Y S T E M S INC T3D D • 0 5 0 4 33 6 0 0 0 3 7 2 7 S ■ ALCR PROCESS TNL Process TNL NPN Small-Signal Transistor Process TNL transistors and chips are double diffused NPN silicon epitaxial planar devices in tended for use in general-purpose amplifiers and
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2N5376
2N5377,
00G372Ã
2N5377
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T3D 24
Abstract: T3D 05 T3D 45 Sn10Pb88Ag2 333 1kv T3D 30 T3D+45 T3D+53
Text: www.amccaps.com High Temperature Radial Leaded Capacitors Key Features • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics
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T4A 392
Abstract: T3D 01 1F 474
Text: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics
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min54
T4A 392
T3D 01
1F 474
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Untitled
Abstract: No abstract text available
Text: !SPECIFICATIONS AND TEST METHODS Specification No. Item Temperature Compensating Type X7R : -55 to +125D Y5V : -30 to +185D 1 Operating C0G : Y55 to W125D Temperature Range 2 Rated Voltage See the previous pages. 3 4 Appearance Dimensions No defects or abnormalities.
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25ted
000T12
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T3D part marking
Abstract: marking T2B T6B MARKING CODE Sn10Pb88Ag2 T5A 392 T6A marking MARKING CODE T5E T3D 05 T4A 392
Text: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics
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Untitled
Abstract: No abstract text available
Text: www.amccaps.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics
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T3D 46 diode
Abstract: Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode t3d 56
Text: SIEMENS BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm ^FRMS irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current
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O-218AD
C67047-A2250-A2
A23SbG5
235b05
T3D 46 diode
Diode T3D 56
T3D 65 diode
Diode T3D 08
Diode T3D 38
T3D 49 diode
t3d 56
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T3D 76
Abstract: Rectifier t3d T3D rectifier Collmer Semiconductor 50kV T3D 6 CS451F07 CS451F12 CS452F15 CS452F25
Text: COL LME R S E M I C O N D U C T O R INC MAE D • 553 6712 □ □ □ 1 7 c15 D 1 H « C O L Fast Recovery High Voltage Silicon Rectifiers w Minimum Size 7KV to 5 0 KV V r r m Diffused Silicon Junction Low Leakage Current 100 Nanosec. Reverse Recovery
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CS451F07
CS451F12
CS452F15
CS452F25
CS453F40
CS453F50
T3D 76
Rectifier t3d
T3D rectifier
Collmer Semiconductor
50kV
T3D 6
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T3D+53
Abstract: t3d 05 T3D 53
Text: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type
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PSD51
PSD54
PSH81
PSL51
O-226AA/STYLE
T3D+53
t3d 05
T3D 53
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t3d 66
Abstract: T3D 64 737 s1g t3d 29 T3D 90
Text: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE
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N2200
N3300
N4200
N4700
N5600
t3d 66
T3D 64
737 s1g
t3d 29
T3D 90
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T3D 54 DIODE
Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
Text: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single
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T3D DIODE
Abstract: T3D 36 diode T3D 43 diode T3D 28 DIODE Diode T3D 24 Diode T3D 44 T3D 34 diode Kodak KAI 2000 T3D 21 diode T3D 37 DIODE
Text: Performance Specification KAI-2093M KAI - 2093M 1920 H x 1080 (V) Pixel Megapixel Interline CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 2 February 11, 2002 Eastman Kodak Company – Image Sensor Solutions
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KAI-2093M
2093M
40MHz.
T3D DIODE
T3D 36 diode
T3D 43 diode
T3D 28 DIODE
Diode T3D 24
Diode T3D 44
T3D 34 diode
Kodak KAI 2000
T3D 21 diode
T3D 37 DIODE
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t3d diode
Abstract: KAI-2093M KAI-2093 T3D 55 diode marking t3d T3D 01 DIODE T3D 28 T3D 17 diode
Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0307 March 19, 2007 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0307
KAI-2093
t3d diode
KAI-2093M
T3D 55
diode marking t3d
T3D 01 DIODE
T3D 28
T3D 17 diode
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T3D 36 diode
Abstract: T3D+36+diode
Text: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0307
KAI-2093
MTD/PS-0307
T3D 36 diode
T3D+36+diode
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DIODE T3D 95
Abstract: t3d diode T3D 34 diode kai-2093cm T3D 01 DIODE T3D 28 DIODE 360NM diode marking code t3d kai image sensor diode marking t3d
Text: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JULY 13, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5
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KAI-2093
PS-0026
PS-0026
DIODE T3D 95
t3d diode
T3D 34 diode
kai-2093cm
T3D 01 DIODE
T3D 28 DIODE
360NM
diode marking code t3d
kai image sensor
diode marking t3d
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T3D DIODE
Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
Text: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4
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MTD/PS-0307
KAI-2093
MTD/PS-0307
T3D DIODE
T3D DIODE clamp
diode T3D
kai-2093cm
Diode T3D 44
T3D 34
Kodak KAI 2000
T3D 55 diode
Diode T3D 55
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Untitled
Abstract: No abstract text available
Text: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7
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Untitled
Abstract: No abstract text available
Text: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 11, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5
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KAI-2093
PS-0026
PS-0026
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gr42-6
Abstract: T3d 1d T3D 82 GR43-2 Y504 .25T25 gr39 W25D gr42 T3D 98 diode
Text: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 !SPECIFICATIONS AND TEST METHODS Specification No. 1 Item Temperature Compensating Type Test Method High Dielectric Constant Type X7R : Y55 to W125D Z5U : W10 to W885D Y5V : Y30 to W885D Operating
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C02E-4.
C02E4
W125D
W885D
Y150T130
Y220T160
Y750T120
gr42-6
T3d 1d
T3D 82
GR43-2
Y504
.25T25
gr39
W25D
gr42
T3D 98 diode
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