T3D 55
Abstract: 07E-07
Text: ALLEGRO MICROSYSTEMS INC T3D D • 0504336 0003713 S ■ ALGR PROCESS SKL Process SKL NPN Small-Signal Transistor The S K L Process produces double-diffused, NPN silicon epitaxial planar transistors intended for use in general-purpose amplifier or switching applications
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050433ft
3jg32
T3D 55
07E-07
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Untitled
Abstract: No abstract text available
Text: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold
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SPT78
10-BIT,
SPT7810
10-bit
00022bb
SPT7810
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T3D+53
Abstract: t3d 05 T3D 53
Text: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type
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PSD51
PSD54
PSH81
PSL51
O-226AA/STYLE
T3D+53
t3d 05
T3D 53
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t3d 66
Abstract: T3D 64 737 s1g t3d 29 T3D 90
Text: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE
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N2200
N3300
N4200
N4700
N5600
t3d 66
T3D 64
737 s1g
t3d 29
T3D 90
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Untitled
Abstract: No abstract text available
Text: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7
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TY527
Abstract: panduit 22CC37 WIT-50 t3d 18 n 308 al T3D 6 TY35/535/5354 TYTO PLM-24
Text: CROSS REFERENCE BY SERIES CABLE TIES NTE 04-xx18 04-xx40 04-xx50 04-xx120 04-xx175 ACT AL-xx-18 AL-xx-40 AL-xx-50 AL-xx-120 AL-xx-175 Catamount L-xx-18 L-xx-30/-40 L-xx-50 L-xx-120 L-xx-175 GB 46-1 46-2 46-3 NA 46-4 Panduit PLTxM PLTxI PLTxS PLT2H/4H PLT6H
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04-xx18
04-xx40
04-xx50
04-xx120
04-xx175
AL-xx-18
AL-xx-40
AL-xx-50
AL-xx-120
AL-xx-175
TY527
panduit
22CC37
WIT-50
t3d 18
n 308 al
T3D 6
TY35/535/5354
TYTO
PLM-24
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Untitled
Abstract: No abstract text available
Text: CROSS REFERENCE BY SERIES CABLE TIES NTE 04-xx18 04-xx40 04-xx50 04-xx120 04-xx175 ACT AL-xx-18 AL-xx-40 AL-xx-50 AL-xx-120 AL-xx-175 Catamount L-xx-18 L-xx-30/-40 L-xx-50 L-xx-120 L-xx-175 GB 46-1 46-2 46-3 NA 46-4 Panduit PLTxM PLTxI PLTxS PLT2H/4H PLT6H
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04-xx18
04-xx40
04-xx50
04-xx120
04-xx175
AL-xx-18
AL-xx-40
AL-xx-50
AL-xx-120
AL-xx-175
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T3D 53
Abstract: t3d 57
Text: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF
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C02E9
WithinT12
000T12
T3D 53
t3d 57
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Diode T3D 54
Abstract: T3D 53 diode T3D 53 Diode T3D 55 LLL185 t3d 54 T3D 55 diode C02E10 LLL216 LLL219
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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Original
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C02E10
WithinT12
WithinT30%
000T12
Diode T3D 54
T3D 53 diode
T3D 53
Diode T3D 55
LLL185
t3d 54
T3D 55 diode
LLL216
LLL219
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473 capacitor
Abstract: t3d 54 T3D 53 AR230
Text: C02E10.pdf 03.9.2 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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C02E10
WithinT12
WithinT30%
000T12
473 capacitor
t3d 54
T3D 53
AR230
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Kodak KAI 2000
Abstract: t3d 99 KAI-4000M kodak ccd KAI-4000 ccd image area sensor 120 fps "saturation value" kodak kai t3d+99
Text: Performance Specification KAI-4000M KAI - 4000M 2048 H x 2048 (V) Pixel Megapixel Interline CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 1 December 20, 1999 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010
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KAI-4000M
4000M
KAI-4000M
KAI-4000
2H4822
2H4819
2H4813
Kodak KAI 2000
t3d 99
kodak ccd
ccd image area sensor 120 fps
"saturation value"
kodak kai
t3d+99
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Untitled
Abstract: No abstract text available
Text: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952
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N4200
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E b'lE D bb 5 3^ 31 □D3fi3fl? SOT H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
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BU2525A
bb53cl31
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T3D 53
Abstract: t3d 54 T3D 38 fl03
Text: HN29W3221 Series Preliminary Product Preview 4M word x 8-bit CMOS AND Flash Memory HITACHI The Hitachi HN29W 3221 is a 4M word x 8-bit C M O S Flash Memory, realizing on-board programming. It programs or erases data with only on-board power supply 3.3V V c c supply . It dose
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HN29W3221
HN29W
HN29W322ISeries
20Max
002bDfl
T3D 53
t3d 54
T3D 38
fl03
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85310AYI-01LF
Abstract: ICS5310I-01 ICS85310AYI-01 ICS85310I-01 MC100LVEP111 MS-026 ICS85310-01 85310AYI-01LFT
Text: ICS85310I-01 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-3.3V, 2.5V LVPECL/ECL FANOUT BUFFER General Description Features The ICS85310I-01 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V ECL/LVPECL HiPerClockS Fanout Buffer and a member of the HiPerClockS™
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ICS85310I-01
1-TO-10
ICS85310I-01
85310AYI-01LF
ICS5310I-01
ICS85310AYI-01
MC100LVEP111
MS-026
ICS85310-01
85310AYI-01LFT
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T3D 77
Abstract: OM7612NM Adjustable negative Voltage Regulator 50v LM137HV T3D 42
Text: OM7612NM SURFACE MOUNT 1.5 AMP HIGH VOLTAGE NEGATIVE ADJUSTABLE REGULATOR Three Terminal, High Voltage, Precision Adjustable Negative Voltage Regulator In Hermetic Surface Mount Package FEATURES • • H erm etic S u rfac e M o un t P a c k a g e A d justab le O utp u t V o ltag e
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OM7612NM
LM137HV
534-5776FAX
T3D 77
OM7612NM
Adjustable negative Voltage Regulator 50v
LM137HV
T3D 42
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Untitled
Abstract: No abstract text available
Text: W ie tm v i V 1 U a W ill A DISC CERAMIC CAPACITORS TUSONIX STYLE NUMBER 861 831 801 M A X IM U M 2 3 5 / 5.96 2 9 0 /7 37 .3 6 0 / 9.14 2 0 0 /5 00 . 2 50 /6 2 5 0 /6 35 . 250 / 6.35 250 / 6 . : 5 . 3 75 / 9.52 22 22 22 22 D IA M E T E R D L E A D S P A C IN G (S)
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Untitled
Abstract: No abstract text available
Text: Low Skew, 1-to-10 Differential-to-3.3V, 2.5V LVPECL/ECL Fanout Buffer ICS85310I-01 DATA SHEET General Description Features The ICS85310I-01 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V ECL/LVPECL Fanout HiPerClockS Buffer. The CLKx, nCLKx pairs can accept most
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1-to-10
ICS85310I-01
ICS85310I-01
700MHz
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T3D 34
Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Text: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in
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N1500
1B11R17
T3D 34
T3D 67
T3D 87
t3d 99
T3D 79
t3d 96
T3D 64
T3D 63
Tusonix
u1g 007
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Untitled
Abstract: No abstract text available
Text: C jT O fc D 124-Position 4 x 6 Header 2> ^ l£) I <£><N I nimni in n ii_ in m i niinii. Ä] 7] (7 7 7 7 7 7 ^ ^ [• 86 (3.386) iH m n II U U II U U 24 (HD Ti ADD U U II II U II II U U 11 Ü II II 1918 13 12 7 U U II II II II 6 F 1 contact No. 75.82 (2.985)
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124-Position
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T3D 35 zener DIODE
Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Text: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)
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0003b54
T3D 35 zener DIODE
T3D zener DIODE
t3d 99 diode
diode zener t3d 23
T3D 91
DIODE T3D 95
Diode T3D 82
T3D 65 diode
T3D 82 diode
ZENER DIODE T3D
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T3D diode
Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT451N
b501130
T3D diode
T3D 55 diode
T3D 45 diode
Diode T3D 55
T3D 01 DIODE
T3D 43 diode
T3D 65 diode
DIODE T3D 95
diode T3D
Diode T3D 30
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T3D 87
Abstract: No abstract text available
Text: International p R e c li Í 1er 22GQ100 SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Characteristics Description/Features The 22GQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated
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22GQ100
22GQ100
O-254AA
MIL-S-19500
22GQ1000
22GQ100U
O-254
T3D 87
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BF 830 transistor
Abstract: No abstract text available
Text: TIP42F; 42AF TIP42BF; 42CF _ / V . SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are TIP41F, TIP41AF, TIP41BF and TIP41CF.
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TIP42F;
TIP42BF;
OT186
TIP41F,
TIP41AF,
TIP41BF
TIP41CF.
TIP42F
BF 830 transistor
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