T34 TRANSISTOR Search Results

BFW92A

Abstract: SP 1191 BFW92 transistor BFW92A
Contextual Info: bbS3T31 Philips S em iconductors DD3Sm2 T34 Product specification APX NPN 3 GHz wideband transistor BFW92A N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. DESCRIPTION PIN It is primarily Intended for use in amplifiers in the 40 to 860 MHz

UFN423

Abstract: FN421 FN423 FN420 ufn 423
Contextual Info: TS 1 F 1 T34?TbB DDlGt7H S UNITRODE CORP 9347963 U NI TRÖ DE CORP 92D 10672 D ^ "K POWER MOSFET TRANSISTORS [“ 500 Volt, 3.0 Ohm N-Channel UFN422 UFN423 FEATURES • Fast Sw itching • Low Drive Current • Ease of Paralleling « No Second Breakdow n DESCRIPTION

Contextual Info: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz

Contextual Info: N AflER PHILIPS/DISCRETE b^E D 0057b72 T34 • APX BF240 BF241 b b S B 'I B l Jl HF SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in AM/FM receivers. QUICK REFERENCE DATA Collector-base voltage open emitter

2N3571

Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN

2SC2757

Abstract: t34 transistor transistor marking RF marking T34 RF TRANSISTOR marking T32 RF POWER TRANSISTOR NPN
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2757 DESCRIPTION •Low Noise ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS Ta=25℃

buw34

Abstract: BUW35 2N6675 BU208A buw44 BDW52 bdx85 BU208 BUX80 2N6674
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP 2N6674 *C Pd (A) <W) MAX 15 2N6675 BVc b O BV c e o (V) MIN 175 350 (V) MIN 300 e ie hFE TYP (A) 8.0 (V) @,c fr *TYP (A) (MHZ) MAX MAX MIN v CE(SAT) MIN 20 . 5.0 15 15 15 175 450 400 8.0 20 . 5.0

Contextual Info: Central" CZT5401 Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM ICO N D U CT O R CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

BDW51

Abstract: buw34 BUW35 BDW52 BDX86C BU208 BUX47 BUX80 2N6674 2N6675
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP •c Pd (A) <W) MAX e ie hFE TYP BV c b O BV c e O (V) (V) MIN MIN MIN MAX (A) VCE(SA T) @*c fr *TYP M MAX (A) (MHZ) MIN 2N6674 15 175 350 300 8.0 20 . 5.0 15 15 2N6675 15 175 450 400 8.0 20 . 5.0

Contextual Info: KSR2007 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R ,= 2 2K 0 R 2=47KO) • Complement to KSR1007 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SIEMENS BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i= 2 2 k i2 , R 2= 2 2 k iì TT UT Pin Configuration W Ds 1 = B II CO Q 6 2 7 0 2 -C 2 2 8 8 Package o Marking Ordering Code

0648 ru

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4182 UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4182 is designed for use as an oscillator or a mixer in a VHF in m illim eters TV tuners. Super mini mold package makes it suitable for use in small

2SB939

Abstract: 2SB939A 2SD1262 2SD1262A
Contextual Info: 2SD1262, 2SD1262A Power Transistors 2SD1262, 2SD1262A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SB939, 2SB939A. • Features . • High DC c u rre n t gain Iifê • High speed switching '

marking 1147 IC 6 pin

Abstract: 2SC4182 marking t32
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4182 UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4182 is designed for use as an oscillator or a mixer in a VHF in millimeters TV tuners. Super mini mold package makes it suitable for use in small

Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

Contextual Info: SGS’THOMSON SD1425 RiDD g^ lilL[lC§Tls3©R!lDÊi RF & MICROWAVE TRANSISTORS 800/900 MHz BASE STATION APPLICATIONS 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION P out = 30 W MIN. WITH 7.5 dB GAIN

Contextual Info: /=T SGS THOMSON ^ 7 / . H lMlLi gTMa>M(g§_ AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED a 15:1 VSWR CAPABILITY • LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY

TIP2955T

Abstract: A4S2 TIP3055T T-23-Z
Contextual Info: DEVELOPMENT DATA T h is data sheet c o n ta in s advance in fo rm a t io n a nd TIP2955T sp e cific atio n s are su b ject t o cha nge w it h o u t notice. PHILIPS INTERNATIONAL SbE D • 711005b 0043bG4 2 2 5 H P H I N T -2 3 -Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR

TIP2955T

Contextual Info: D E V ELO P M EN T DATA TIP2955T T h is data sheet contains advance information and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL • 711002b GG43bDM 22S H P H I N T-33-Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope. With its n-p-n complement T IP 3 0 5 5 T they are primarily intended

MPQ3762

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad M em ory Driver Transistor MPQ3762 nil m np rrn noi m m PNP Silicon Iv H J Lt a j PNP r v n r v n MAXIM UM RATING S 1 Rating Symbol Value Collector-Emitter Voltage v C EO -40 Vdc Collector-Base Voltage VCBO -40 Vdc

ci 4093

Abstract: IC 4093 2n4091
Contextual Info: 2N4091 to 4093 J V N-CHANNEL FETS Silicon symmetrical n-channei depletion type junction field-effect transistors in T0-18 metal envelopes with the gate connected to the case. The transistors are intended for low power switching applications in industrial service.

Contextual Info: SILICON MONOLITHIC TD6347F BIPO LAR DIGITAL INTEGRATED CIRCUIT CONVENTIONAL TIMER The TD6347F is an autom otive l2L monolithic timer. It is a long-term tim er superior in voltage and tem perature characteristics. It produces an NPN transistor opencollector output.

bsx63

Abstract: BSX62
Contextual Info: 1. • bb-53131 0 D 2 ? m M 712 ■ APX P h ilip s S e m ic o n d u c to rs Data sheet status Preliminary specification date of issue June 1992 BSX62-10, -16/BSX63-10, -16 Silicon planar epitaxial transistors N ANER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA

ci 4093

Abstract: IC 4093 2N4091 2N4093 IC 4093 data 4093 4093 N 2N4092
Contextual Info: 2N4091 to 4 0 9 3 J V _ N-CHANNEL FETS Silicon symmetrical n-channei depletion type junction field-effect transistors in T 0-18 metal envelopes with the gate connected to the case. The transistors are intended for low power switching applications