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    T33 TRANSISTOR Search Results

    T33 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T33 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G9SX-BC202

    Abstract: T11T12 T21T22 transistor s34 automatic 3 phase changer block diagram of plc s7 KM6 II preset switch G9SX-BC202-RT 6 channel relay to control robot plc wiring diagram s7 200
    Text: Flexible Safety Unit G9SX Logical AND Function Adds Flexibility to I/O Expansion • Facilitates partial or complete control system setup. • Solid-state outputs excluding Expansion Units . • Detailed LED indications enable easy diagnosis. • TÜV Product Service certification for compliance


    Original     		PDF IEC/EN61508 EN954-1 J150-E1-04 75-344-7093/Fax: G9SX-BC202 T11T12 T21T22 transistor s34 automatic 3 phase changer block diagram of plc s7 KM6 II preset switch G9SX-BC202-RT 6 channel relay to control robot plc wiring diagram s7 200

    Untitled

    Abstract: No abstract text available
    Text: BENCHMARÛ MICROELEC bflE D • 137001e] QOGIET? T33 HIBEN l3C|2012 Gas Gauge 1C Preliminary f e j BENCHMARQ Features General Description >- Conservative and repeatable measurement of available charge in rechargeable batteries The bq2012 Gas Gauge IC is in­


    OCR Scan     		PDF 137001e bq2012 bq2012 G0G1314 16-pin

    15n50

    Abstract: STH15N50 STW15N50 STH15N50FI ISOWATT218
    Text: _71S1237 QG45T2fl T33 • S G T H STH15N50/FI STW15N50 SGS-THOMSON ilIO T « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 STH15N50FI STW 15N50 . ■ . . ■ . V dss RDS on Id 500 V 500 V 500 V < 0.4 Î2 < 0.4 n < 0.4 fi 15 A 9 .3 A


    OCR Scan     		PDF 71S1237 QG45T2fl STH15N50/FI STW15N50 STH15N50 STH15N50FI 15N50 15N50 STH15N50/FI-STW15N50 STW15N50 ISOWATT218

    dual tracking power supply

    Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
    Text: M3DES71 H A OGSSTTD R R T33 • H AS I S C * A S E M I C O N D U C T O R M 'I f i Q d M Programmable Power Switch/Amplifier for Control and General Purpose Applications April 1994 Features Description • • • • • The CA3094 is a differential input power control switch/


    OCR Scan     		PDF M3DES71 CA3094T, CA3094AT, CA3094BT, AN6048 AN6048. CA3094 dual tracking power supply CA3094T thermistor ntc 180m 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A

    2N3571

    Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36
    Text: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN


    OCR Scan     		PDF BFT32 BFT33 BFT34 fBFT35 BFT35 BFT36 BFT37 Max50 2N3571 2N3570 2N4253 2N4252 2N3571 NPN

    T0-202

    Abstract: 045H5 d4104 T0202 D40C4 D40C7 d44c8 D41D5 D40C5 D40C1
    Text: hfl E S L S G 1 1 3 D 0 0 3 ^ 5 3 ^ T33 NATL S E M I C O N D VcEO sutt (Volts) Min Device NPN PNP lc Cant (Am ps) Max I1« I g VcE(iat)® le Min M ax (Am ps) 60 180 0.02 (Volts) M ax (Am ps) h (D I S C R E T E ) P D (A m l» p O(Casa) MHz M in (Watts)


    OCR Scan     		PDF D40N2 T0-202 D40C1 D40C4 D40C5 D40C7 045H5 d4104 T0202 D40C4 D40C7 d44c8 D41D5 D40C5 D40C1

    2N1423

    Abstract: 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. B170024 4000n 2N1423 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223

    BUV98

    Abstract: BUV98A ATT25 BUV98AV BUV98V
    Text: PHI L IP S I N T E R N A T I O N A L 4SE D El 711002b 0031127 O E2PHIN BUV98 V BUV98A(V) T-33-/3 SILIC O N DIFFUSED PO W ER T R A N S IS T O R S High-voltage, high-current, high-speed transistors, assembled in the isolated ISO T O P package; intended for use in inverters, converters and motor control applications on 220 V to 380 V mains supplies.


    OCR Scan     		PDF 711002t, BUV98 BUV98A T-33-/3 OT227B BUV98V BUV98AV) 98AIV) 7ZB19IS ATT25 BUV98AV

    transistor LT5210

    Abstract: LT5210 BSV20A NPN transistor Ic 50A td tr ts tf 2ns1110 10n60m BSX83 AC179 LT5202 AD165
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. B170024 4000n transistor LT5210 LT5210 BSV20A NPN transistor Ic 50A td tr ts tf 2ns1110 10n60m BSX83 AC179 LT5202 AD165

    RX1214B150W

    Abstract: No abstract text available
    Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C


    OCR Scan     		PDF bb53131 RX1214B150W RX1214B150W

    1401-1407

    Abstract: 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 500kSA MT14a 2SD222t 2SD223t 2SD224t TRL2015 20MSA TRL2255S 20M5A 1401-1407 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999

    2N725

    Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. B170024 4000n 2N725 L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803

    BD436 cross reference

    Abstract: BD434 BD436-25 BD439 BD433 BD435 BD436 BD437 BD438 BD440
    Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTE RNA TI ONA L DESCRIPTION SbE D • 7 1 1 G fl2 b O O M E T lb Ö T2 ■ P H IN QUICK REFERENCE DATA SYMBOL -VcES PINNING - TO-126 SOT32 “ VoEO DESCRIPTION


    OCR Scan     		PDF D434/436/438/440/442 aTO-126 BD433, BD435, BD437, BD439 BD441 O-126 711DflSb BD434 BD436 cross reference BD434 BD436-25 BD433 BD435 BD436 BD437 BD438 BD440

    fa08a

    Abstract: VS-2500 transistor 902 E113A FT45
    Text: A E fi CORP 17E D OOETMSb OOGTM'i? 7 BU 902 ;iì3 iK s K e le c tro n ic CfeatveTechnotogtes Silicon NPN Power Transistor r - 3 S 'l3 A p p lio atio n : Sw itching mode power supply Features: • In triple diffusion technique • Short sw itching time • Glass passivation


    OCR Scan     		PDF curreT-33-13 T-33-13 002TM2b fa08a VS-2500 transistor 902 E113A FT45

    10A 600 VOLT DIODE

    Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
    Text: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes


    OCR Scan     		PDF 72T4b21 T-33-35 KE724S0110 T-33- KE72450110 10A 600 VOLT DIODE transistor 13a 600v westinghouse DIODES 827 d transistor KE72

    78m5

    Abstract: mt59 PT2622
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		PDF

    KE724502

    Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
    Text: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts


    OCR Scan     		PDF 00QCH47 T-33-35 KE72450210 KE7245021Û KE72450210 KE724502 DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72

    STC1015D

    Abstract: 2n725 DTS104 L51A DTS103 DTS106 DTS108 DM-36 sdt2110 2n1422
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. B170024 4000n STC1015D 2n725 DTS104 L51A DTS103 DTS106 DTS108 DM-36 sdt2110 2n1422

    TF80/30

    Abstract: 2N1504 TF80/60 ZA24 Transistor 2N625 OD603 2SB84 2SB107 tf80-30 NS1110
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. B170024 4000n TF80/30 2N1504 TF80/60 ZA24 Transistor 2N625 OD603 2SB84 2SB107 tf80-30 NS1110

    K1502

    Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. B170024 4000n K1502 Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B

    RZ2833B45W

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E ObE D _1_L bbSB^l • 0015551 1 RZ2833B45W r- ss-is PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base ciass-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.


    OCR Scan     		PDF 100/us; 0015S55 RZ2833B45W 7Z24143 RZ2833B45W

    vr182

    Abstract: BDT29 BDT30 BDT30A BDT30B
    Text: ri N AMER PH ILI P S/ DI SC RE T E- bbS3ia 1 O d l U b ? a • BDT30;A BDT30B;C SSE D J T-33-/7 SILICON EPITAXIAL BASE POWER TRANSISTORS -P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The T IP 3 0 series is an equivalent type


    OCR Scan     		PDF BDT30 BDT30B T-33-/7 BDT29 T-33-19 7Z82166 vr182 BDT30A

    MM2102

    Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I


    OCR Scan     		PDF NPN110. B170024 4000n MM2102 BSW30 ft06 310M 200S A190 A192 A193 A390 T072

    t33b

    Abstract: No abstract text available
    Text: 45E D PHILIPS INTERN ATIONAL a 711002b 0D31DTS 2 E 3 PH IN BUV28F BUV28AF T-33M I SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters,' inverters, switching regulators, m otor control


    OCR Scan     		PDF 711002b 0D31DTS BUV28F BUV28AF T-33M t33b