1T33
Abstract: No abstract text available
Text: 西普电气网站-产品详细资料 页码，1/1 -=> 产品总汇 >>电 >>电感式 - 特殊型>> 特殊型>>T33 >>T33系列接近 T33系列接近开关 系列接近开关>> 开关>>T33 >>T33T33-D8NKS 浏览次数：4 会员价: 欲知价格请登陆
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T33-D8NKS
0-30V
200mA
400Hz
1T33
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Untitled
Abstract: No abstract text available
Text: 西普电气网站-产品详细资料 页码，1/1 -=> 产品总汇 >>电 >>电感式 - 特殊型>> 特殊型>>T33 >>T33系列接近 T33系列接近开关 系列接近开关>> 开关>>T33 >>T33T33-D8NHS 浏览次数：3 会员价: 欲知价格请登陆
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T33-D8NHS
0-30V
200mA
400Hz
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Untitled
Abstract: No abstract text available
Text: 西普电气网站-产品详细资料 页码，1/1 -=> 产品总汇 >>电 >>电感式 - 特殊型>> 特殊型>>T33 >>T33系列接近 T33系列接近开关 系列接近开关>> 开关>>T33 >>T33T33-D8NTS 浏览次数：4 会员价: 欲知价格请登陆
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T33-D8NTS
0-30V
200mA
400Hz
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Untitled
Abstract: No abstract text available
Text: crimson semiconductor de" inc 2514096 CRIMSON SEMICONDUCTOR INC 99 D 0 0 3 3 5 D | asmmb T33-0/ EPITAXIAL BASE TO-3 continued NPN PNP Vc«o (V ) 2N 3716 2N 5873 2N 5874 2N 3792 2N 5871 2N 5872 10 0 /8 0 2N 5877 2N 5875 2N 5878 2N 5876 2N 6053 2N 6054 2N 6055
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T33-0/
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2N3571
Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT32 BFT33 BFT34 BFT35 BFT36
Text: Discrete Semiconductors T e x a s In s t r u m e n t s Polarity High C u rren t A m p lifiers and S w itch es Device Type M axim um ratings Case BV BV BV CBO CEO EBO IC M Ic V V mA mA min. max. mA min. 30 30 30 30 30 30 V BFT32 hFE1 hFE 2 BF T33 BF T34 NPN
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BFT32
BFT33
BFT34
fBFT35
BFT35
BFT36
BFT37
Max50
2N3571
2N3570
2N4253
2N4252
2N3571 NPN
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T0-202
Abstract: 045H5 d4104 T0202 D40C4 D40C7 d44c8 D41D5 D40C5 D40C1
Text: hfl E S L S G 1 1 3 D 0 0 3 ^ 5 3 ^ T33 NATL S E M I C O N D VcEO sutt (Volts) Min Device NPN PNP lc Cant (Am ps) Max I1« I g VcE(iat)® le Min M ax (Am ps) 60 180 0.02 (Volts) M ax (Am ps) h (D I S C R E T E ) P D (A m l» p O(Casa) MHz M in (Watts)
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D40N2
T0-202
D40C1
D40C4
D40C5
D40C7
045H5
d4104
T0202
D40C4
D40C7
d44c8
D41D5
D40C5
D40C1
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2N1423
Abstract: 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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NPN110.
B170024
4000n
2N1423
2N5577
2N5579
MD38
1401-0207
MT1836
2SD223
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transistor LT5210
Abstract: LT5210 BSV20A NPN transistor Ic 50A td tr ts tf 2ns1110 10n60m BSX83 AC179 LT5202 AD165
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
B170024
4000n
transistor LT5210
LT5210
BSV20A
NPN transistor Ic 50A td tr ts tf
2ns1110
10n60m
BSX83
AC179
LT5202
AD165
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RX1214B150W
Abstract: No abstract text available
Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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bb53131
RX1214B150W
RX1214B150W
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1401-1407
Abstract: 2N1423 MT1836 2SC1005 2N5577 2N5579 MD38 MT49 STC3741 2sc999
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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NPN110.
500kSA
MT14a
2SD222t
2SD223t
2SD224t
TRL2015
20MSA
TRL2255S
20M5A
1401-1407
2N1423
MT1836
2SC1005
2N5577
2N5579
MD38
MT49
STC3741
2sc999
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2N725
Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
B170024
4000n
2N725
L51A
BSV20A
DM-58
2N625
BSX86
fr 153/30 r
T072
UC340
UC803
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fa08a
Abstract: VS-2500 transistor 902 E113A FT45
Text: A E fi CORP 17E D OOETMSb OOGTM'i? 7 BU 902 ;iì3 iK s K e le c tro n ic CfeatveTechnotogtes Silicon NPN Power Transistor r - 3 S 'l3 A p p lio atio n : Sw itching mode power supply Features: • In triple diffusion technique • Short sw itching time • Glass passivation
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curreT-33-13
T-33-13
002TM2b
fa08a
VS-2500
transistor 902
E113A
FT45
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78m5
Abstract: mt59 PT2622
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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STC1015D
Abstract: 2n725 DTS104 L51A DTS103 DTS106 DTS108 DM-36 sdt2110 2n1422
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
B170024
4000n
STC1015D
2n725
DTS104
L51A
DTS103
DTS106
DTS108
DM-36
sdt2110
2n1422
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K1502
Abstract: Transistors 2n551 transistor k1502 BFX82 AN L61C 2N3113 RN1030 P1027 T03A MT101B
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
B170024
4000n
K1502
Transistors 2n551
transistor k1502
BFX82
AN L61C
2N3113
RN1030
P1027
T03A
MT101B
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RZ2833B45W
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E ObE D _1_L bbSB^l • 0015551 1 RZ2833B45W r- ss-is PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base ciass-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.
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100/us;
0015S55
RZ2833B45W
7Z24143
RZ2833B45W
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MM2102
Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I
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NPN110.
B170024
4000n
MM2102
BSW30
ft06
310M
200S
A190
A192
A193
A390
T072
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t33b
Abstract: No abstract text available
Text: 45E D PHILIPS INTERN ATIONAL a 711002b 0D31DTS 2 E 3 PH IN BUV28F BUV28AF T-33M I SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters,' inverters, switching regulators, m otor control
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711002b
0D31DTS
BUV28F
BUV28AF
T-33M
t33b
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TS 4142
Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
Text: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage
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0075T4
T-33-
KSD288
TS 4142
LC04A
KSD73
100V transistor npn 5a
ksa814
NPN Transistor TO220 VCEO 80V 100V
SAA 1020
NPN/TS 4142
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2N2128
Abstract: T4 0660 2N5577 2N5579 MD38
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
2N2128
T4 0660
2N5577
2N5579
MD38
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NKT 275 transistor
Abstract: 2sc5250 transistor 2N5577 2N5579 MD38 S2000 2SD223 1401-0405
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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NPN110.
buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
NKT 275 transistor
2sc5250 transistor
2N5577
2N5579
MD38
S2000
2SD223
1401-0405
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bus48
Abstract: t335 motorola bus48
Text: "Tb MO TOR OLA SC ÍXSTRS/ R Fi 6367254 MOTOROLA SC DE |b3t.75S4 00Û073S 96D <XSTRS/R F 80735 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE II* SERIES NPN SILICON POWER TRANSISTORS 15 A M P E R E S NPN SILICON POWER TRAN SISTO RS 400 and 450 VOLTS BVCEO)
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MJ-10003
Abstract: No abstract text available
Text: 34 M O T O R O L A SC -CDIODES/OPTOJ j 6367255 MOTOROLA SC DE|b3t,?2SS 7 34-C. 3 7 9 6 0 D IO D E S /O P T O D T-33 -O / SILICON POWER TRANSISTOR DICE (continued) MJC10007 DIE NO. — NPN LINE SOURCE — PL500.918 This die provides performance equal to or better than that of
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PL500
MJ10002
MJ10003
MJ10006
MJ10007
MJC10007
MJ-10003
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POWER TECHNOLOGY COMPONENTS
Abstract: PTC6062
Text: 6115950 MICROSEMI CORP/POWER 02E □2 00515 ~T-33- D 1 > F | bllS'ÏSG DDD0S15 1 I - "“ CCC6063 PTC TECHNOLOGY 20 A, 550 V, NPN Darlington Power TVansistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au
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T-33-
DDD0S15
CCC6063
emitter-15-mil
thickness-12
PTC6060
PTC6061
PTC6062
PTC6063
POWER TECHNOLOGY COMPONENTS
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