T30UDPBQ
Abstract: T30UDPAQ T30UDPB T30UDPA T30UDNA Proximity Sensor 4-20 out T30 90
Text: U-GAGE T30 Series with Dual Discrete Outputs Ultrasonic Sensors with TEACH-Mode Programming Dual-Discrete U-GAGE T30 Series Features • Fast, easy-to-use TEACH-mode programming; no potentiometer adjustments • Choose to set a specific window size and position, or a set point centered within its
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10-mm
T30UDPBQ
T30UDPAQ
T30UDPB
T30UDPA
T30UDNA
Proximity Sensor 4-20 out
T30 90
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PDF
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marking code T12 y
Abstract: 2.F 1 marking 561 6.3v CAPACITOR 1000pf T3D 46 diode diode T3D 6 GRM43 X7R GRM43N marking 84 MARKING CODE R7
Text: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF
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Original
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C02E9
Y000T030
Y000T060
Y150T060
Y220T060
Y330T060
Y470T060
Y750T120
Y1000
marking code T12 y
2.F 1 marking
561 6.3v
CAPACITOR 1000pf
T3D 46 diode
diode T3D 6
GRM43 X7R
GRM43N
marking 84
MARKING CODE R7
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PDF
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grm32df51h106
Abstract: GRM43ER72A225KA01 GRM55ER72A475 GRM55RR GRM15X5C1H390JDB4
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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Original
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C02E10
Y1000
grm32df51h106
GRM43ER72A225KA01
GRM55ER72A475
GRM55RR
GRM15X5C1H390JDB4
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PDF
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smd TRANSISTOR sot-23 WTs
Abstract: transistor WTs smd ES1968 ess Maestro-2 PIN HEADER 4X1, 2.54 pitch Pin Header ES1968S diode T35 12H ES2818 MAESTRO-2 FERRITE BEAD 1000 OHM 0805
Text: Maestro-2TM PCI Audio Accelerator Data Sheet DESCRIPTION FEATURES The Maestro-2TM digital audio accelerator is a highly integrated PCI audio solution that brings advanced audio features to notebook and desktop systems. These features include a 64-voice wavetable synthesizer with
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64-voice
500-MIPS-equivalent
ES1918
SAM0056-102997
smd TRANSISTOR sot-23 WTs
transistor WTs smd
ES1968
ess Maestro-2
PIN HEADER 4X1, 2.54 pitch Pin Header
ES1968S
diode T35 12H
ES2818
MAESTRO-2
FERRITE BEAD 1000 OHM 0805
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PDF
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db34
Abstract: D-A54 DB26 DB52 BE1210 pc800 dram samsung T45 to DB9 RR10a da45
Text: Direct RDRAM DEVICE OPERATION Change History Version 1.11 October 2000 * From Version 1.11, Samsung’s RDRAM Datasheet consists of two parts. - One thing is “Device operation” which is common for all devices and another is “Characteristics description” that accounts for each own
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Outline T44
Abstract: DB26
Text: Direct RDRAM DEVICE OPERATION Change History Version 1.11 October 2000 * From Version 1.11, Samsung’s RDRAM Datasheet consists of two parts. - One thing is “Device operation” which is common for all devices and another is “Characteristics description” that accounts for each own
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PDF
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47UF uCapacitor X7R 1206u
Abstract: 10n 500V capacitor 2.F 1 marking Z5U 472 cap 10pF 50V 10% 0603 X7R marking W30 grm 200 GRM Series Specification and Test Methods 2 marking code T12 y marking code T12
Text: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF
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Original
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C02E9
Y000T030
Y000T060
Y150T060
Y220T060
Y330T060
Y470T060
Y750T120
Y1000
47UF uCapacitor X7R 1206u
10n 500V capacitor
2.F 1 marking
Z5U 472
cap 10pF 50V 10% 0603 X7R
marking W30
grm 200
GRM Series Specification and Test Methods 2
marking code T12 y
marking code T12
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PDF
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da53
Abstract: 144MD-50-711 144MD-53-600 128MD-40-800 128MD-50-711 128MD-53-600 144MD-40-800
Text: Direct RDRAM RAMBUS 128/144-Mbit 256Kx16/18x32s Preliminary Information Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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128/144-Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059
DL0059
da53
144MD-50-711
144MD-53-600
128MD-40-800
128MD-50-711
128MD-53-600
144MD-40-800
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PDF
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Untitled
Abstract: No abstract text available
Text: RDRAM for Short Channel 128/144-Mbit 256Kx16/18x32s-C Preliminary Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including communications, graphics, video, and any other application where high
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128/144-Mbit
256Kx16/18x32s-C)
128/144-Mbit
800MHz
1066MHz
DL-0091-098
DL-0091-098
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PDF
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da53
Abstract: 128MD-40-800 128MD-50-711 128MD-53-600 144MD-40-800 144MD-50-711 144MD-53-600 DB25 Parallel connector XOP1 144MD-45-800
Text: Direct RDRAM RAMBUS 128/144-Mbit 256Kx16/18x32s Preliminary Information Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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Original
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128/144-Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059
DL0059
da53
128MD-40-800
128MD-50-711
128MD-53-600
144MD-40-800
144MD-50-711
144MD-53-600
DB25 Parallel connector
XOP1
144MD-45-800
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PDF
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C02E10
Abstract: capacitor 6s 100 16v
Text: C02E10.pdf 03.9.2 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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Original
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C02E10
Y000T030
Y000T060
Y150T060
Y220T060
Y330T060
Y470T060
Y750T120
Y1000
capacitor 6s 100 16v
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PDF
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U4002
Abstract: C02E10 GRM155 GRM188 GRM21 GRM219
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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Original
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C02E10
Y1000
U4002
GRM155
GRM188
GRM21
GRM219
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PDF
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Untitled
Abstract: No abstract text available
Text: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.0 July 1999 Page -2 Rev. 1.0 Jul. 1999 KM416RD8AC(D)/KM418RD8AC(D) Preliminary Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History
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K4R271669A
128Mbit
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PDF
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da53
Abstract: DB26 KM416RD8AC KM418RD8AC
Text: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
da53
DB26
KM418RD8AC
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PDF
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Untitled
Abstract: No abstract text available
Text: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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512Kx16/18x32s)
600MHz
DL-0118-050
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PDF
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RDRAM Clock
Abstract: No abstract text available
Text: 1066 MHz RDRAM 256/288 Mb 4Mx16/18x4i Advance Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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Original
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DL-0119-030
RDRAM Clock
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PDF
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da53
Abstract: DB26 DL0054 ycl dc 101
Text: 1066 MHz RDRAMâ 256/288 Mb 4Mx16/18x4i Advance Information Overview • The Rambus DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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4Mx16/18x4i)
DL-0119-010
da53
DB26
DL0054
ycl dc 101
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PDF
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DL010
Abstract: No abstract text available
Text: RDRAM for Short Channel 256/288-Mbit 512Kx16/18x32s-C Preliminary Information Overview The RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
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256/288-Mbit
512Kx16/18x32s-C)
256/288-Mbit
711MHz
1066MHz
DL-0108-098
DL-0108-098
DL010
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PDF
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0120d
Abstract: No abstract text available
Text: RDRAM 512Mb 1024Kx16/18x32s Advance Information Overview The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
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512Mb
1024Kx16/18x32s)
800MHz
1600MHz
625ns
DL-0205-01
0120d
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PDF
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da53
Abstract: DB26 DL0108 D-B53 TRR DB1
Text: Preliminary Information Direct RDRAM for Short Channel 256/288-Mbit 512Kx16/18x32s-C RAMBUS Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer
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256/288-Mbit
512Kx16/18x32s-C)
256/288-Mbit
711MHz
1066MHz
DL0108
DL0108
da53
DB26
D-B53
TRR DB1
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PDF
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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Original
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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PDF
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Untitled
Abstract: No abstract text available
Text: REV. EES NO. HATE .ul/C7/2CM 01 BY DEKW FTICII RELEASED 1 5 0 . 0 ± 5 . 0 1-=PÙ3 E C o£ M D 2 ' L2 M~ ’ EM NOTE : TER. H RS, D F b 9 — 2 2P C FA WIPE. o L 1 S 6 1 » '2 2 1 7 / C 1G . 5L&CK. Q D -1 .2 8 (A1Q9QC87Q C01SD) DESCR FT13N_
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OCR Scan
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A1Q9QC87Q
C01SD)
FT13N_
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PDF
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2021 PATENTED GOLD METALIZED General Description pp p a c k a g e : Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"* process features gold metal for greatly extended
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OCR Scan
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F2021
VGS12V
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PDF
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