T2D 63 Search Results

T2D 53

Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Contextual Info: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by

T2D 03

Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
Contextual Info: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V

t2d 82

Abstract: t2d 76 t2d 96
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

t2d7

Abstract: T2D 1D T2D 09 0/diode T2D7
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

VMVSJ150GP

Abstract: VMVM2C175GP VMVMJ175GP VMVS2A150GP VMVS2TW100GP VMVSJ100GP VMVM3A175GP VMVS2TW070GP VMVS2C100GP VMVMJ100GP
Contextual Info: 3L VMV Series 50–175W Champ H.I.D. Luminaires Cl. II, Groups E, F, G, Cl. III & Simultaneous Presence HPS 50W, 70W Marine & Wet Locations 3, 3R, 4, 4X; IP56 to IP66 Applications: Options: VMV series Champ luminaires are used: • In manufacturing plants, refineries,

AT-19

Contextual Info: B H 63.25REF T20 T1 ,T11 14 BBBBa MATERIAL : •B‘ CAG E: COPPER ALLOY CONTACT : THERMOPLASTIC 94V-0 & COPPER ALLOY EMI GASKET : STAINESS STEEL LIGHT P IPE: PC 1— — - O O © D © O O 0 O O © © © © © © O O CAGE : NICKEL OVER COPPER O O

Contextual Info: B H 63.25REF T20 T1 BBBBa ,T11 14 MATERIAL : CAG E: COPPER ALLOY CONTACT : THERMOPLASTIC 94V-0 & COPPER ALLOY EMI GASKET : STAINESS STEEL •B‘ 1— — - O O D © O O © © O O FINISH : © CAGE : NICKEL OVER COPPER O O © © © O O © O O © ©

Contextual Info: B H 63.25REF T20 T1 ,T11 14 BBBBa AV a y MATERIAL : •B‘ D © 1— — - O O O © © O O © © © O O O O © O O © © C O O O O © © o o © © © © O © a O O O © © © CAG E: COPPER ALLOY CONTACT : THERMOPLASTIC 94V-0 & COPPER ALLOY EMI GASKET : STAINESS STEEL

R-OP-008200-7-B-N-11

Contextual Info: B H 63.25REF T20 T1 ,T11 14 BBBBa UA VA VA VA MATERIAL : •B‘ CAG E: COPPER ALLOY CONTACT : THERMOPLASTIC 94V-0 & COPPER ALLOY EMI GASKET : STAINESS STEEL LIGHT P IPE: PC 1— — - O D O © © O O O © O O © © © O O © O O © O O © © © C O O

Contextual Info: INTEGRATED CIRCUIT TO SH IBA 1. ° 1 (2) (3) (4) (5) TECHNICAL DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL The TC8890 is dedicated mask ROM for speech synthesis LSI. FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.

t2d 82

Abstract: T2D 79 marking T2D T2D 07
Contextual Info: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

t2d 82

Abstract: t2d marking code
Contextual Info: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,

5353482 ic

Abstract: TC8802 TC8802AF t2d 46
Contextual Info: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.

RT4 RR3

Abstract: con10A D52-100 RC3304N SP0503 B12 TT6 5rr11 T2D 53 dmo2 t2d 68
Contextual Info: 5 4 3 2 1 T TP1 Vcc3v3 RxTSel TxTSel C RxTSEL TxTSEL 106 INT_TRATIO 103 PTS1_RCLKE PTS2_TCLKE 101 102 22 21 20 CLKSEL0 CLKSEL1 CLKSEL2 RDY_EQC4 TEST ICT CS_EQC3 ALE_EQC2 WR_EQC0 RD_EQC1 38 GCK3 100 RxON SCS1 49 SCS1 R3 SEL 65 67 63 122 TMS TCK TDI TDO 50 51

T2D 95

Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Contextual Info: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In

T2D 94

Abstract: MT2D25632M6
Contextual Info: M I CR ON S E M I C O N D U C T O R INC b^E ]> • M IC R O N I b l l l S 4 ci G O O ' n S ? lb? WM URN MT2D25632 256K X 32 DRAM MODULE DRAM MODULE 256K x 32 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process

10XTV1-CT

Abstract: raychem GS-54 TAPE 20QTVR2 10QTVR2 raychem GS54 10BTV1 15XTV2 H56882 raychem HQTV JBS-100-L-A
Contextual Info: R Self-Regulating Cables This step-by-step design guide provides the tools necessary to design a self-regulating heat-tracing system for insulated pipes and tubing. For other applications or for design assistance, contact your Tyco Thermal Controls representative or phone Tyco Thermal

T2D 53

Abstract: t2d diode T2D 65 diode T2D 70 diode t2d 46 T2D 26 diode C8051F320 JTAG t2d 68 T2D 44 diode T2D 52 diode
Contextual Info: 5 4 3 2 1 U3B Codes0 S4 T1D C9 RCLK0 RPOS0 RNEG0 1 2 3 4 8 7 6 5 HEADER 4X2 CODES0 RCLK0 RPOS0 RNEG0 D B4 C5 C4 B3 B2 A2 TCLK0 TPOS0 TNEG0 TRING0 E2 16 25 F1 17 20 D1 PO300SA 23 22 D2 PO300SA 21 F2 0.68uf TTIP0 RRING0 RCLK0 RPOS0 RNEG0 E3 D1 R13 R21 10 C1

T2D 53

Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Contextual Info: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In

T2D 81

Abstract: T2D 066 T2D 78 T2D 77
Contextual Info: SEDI 722/24 CMOS LCD DRIVER • CMOS 80-Bit Segment Driver • DESCRIPTION The SED1722/24 is an 80 dot matrix LCD segment column driver for driving high-capacity LCD panels at duty cycles higher than 1/100 (up to 1/500). The LSI features a wide range of LCD drive voltages.

T2D 81

Abstract: t2d 46 t2d 82 T2D 83 TC8802AF T2D 2 TC8802 SPEECH SYNTHESIS DI-22 JU TOSHIBA
Contextual Info: INTEGRATED CIRCUIT TOSHIBA TECHNICAL 1. 1 ( 2) (3) (4) (5) DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL . The TC8890 is dedicated mask ROM for speech synthesis T-RT FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.

Contextual Info: in ttJ o ^ iy i» w 8XC196NP COMMERCIAL CHMOS 16-BIT MICROCONTROLLER • 25 MHz Operation at 4.5-5.5 Volts ■ 1 Mbyte of Linear Address Space ■ Optional 4 Kbytes of ROM ■ 1000 Bytes of Register RAM ■ Register-register Architecture ■ 32 I/O Port Pins