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    T2D 50 Search Results

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    T2D 50 Price and Stock

    Staco Energy Products Co 5021CT-2D

    Industrial Control Transformers 3-Phase, Delta, 28A 0-120Vin, 0-280Vout
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 5021CT-2D
    • 1 $5270
    • 10 $5270
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    Staco Energy Products Co 5011CT-2D

    Industrial Control Transformers 3-Phase, Open Delta 120Vin/140Vout, 50A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 5011CT-2D
    • 1 $5270
    • 10 $5270
    • 100 $5270
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    Staco Energy Products Co 15M5011CT-2D

    Industrial Control Transformers Variable Transformer, Motorized, 3 Phase Open Delta input, 50Ao, 0-140Vo, 12.1kVA, Cased, Bench
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 15M5011CT-2D
    • 1 $6610
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    Staco Energy Products Co 30M5011CT-2D

    Industrial Control Transformers Variable Transformer, Motorized, 3 Phase Open Delta input, 50Ao, 0-140Vo, 12.1kVA, Cased, Bench
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 30M5011CT-2D
    • 1 $6610
    • 10 $6610
    • 100 $6610
    • 1000 $6610
    • 10000 $6610
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    Staco Energy Products Co 60M5011CT-2D

    Industrial Control Transformers Variable Transformer, Motorized, 3 Phase Open Delta input, 50Ao, 0-140Vo, 12.1kVA, Cased, Bench
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 60M5011CT-2D
    • 1 $6610
    • 10 $6610
    • 100 $6610
    • 1000 $6610
    • 10000 $6610
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    T2D 50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T2D 90

    Abstract: T2D 80 "T2D" T2D 30
    Text: 3.3V CMOS Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C


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    PDF 7680kHz 30ppm 20ppm 10ppm -10ppm -30ppm -50ppm 012ppm/ 768kHz T2D 90 T2D 80 "T2D" T2D 30

    T2D 44

    Abstract: T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode
    Text: 3.3V SM Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C


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    PDF 7680kHz 30ppm 20ppm 10ppm -10ppm -30ppm -50ppm 012ppm/ 768kHz T2D 44 T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode

    66-219/T2D-AR2S2B5Y/3C

    Abstract: t2d diode diode T2D t2d 76 66-219-T2D T2D 95 chips t2d transistor t2d 66-219 66-219/T2D-CS1T1B5Y/3C
    Text: Technical Data Sheet White Chip LED With Right Angle Lens 66-219/T2D-AR2S2B5Y/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.


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    PDF 66-219/T2D-AR2S2B5Y/3C DSE-0000555 17-Dec-2008 66-219/T2D-AR2S2B5Y/3C t2d diode diode T2D t2d 76 66-219-T2D T2D 95 chips t2d transistor t2d 66-219 66-219/T2D-CS1T1B5Y/3C

    T2D DIODE

    Abstract: T2D DIODE 02
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2


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    PDF AEC-Q101 RFN16T2DFH RFN16 O-220) O220FN R1120A T2D DIODE T2D DIODE 02

    16-219A

    Abstract: t2d 76 transistor t2d
    Text: Technical Data Sheet 0402 Package Chip LED 0.2mm Height 16-219A/T2D-AR2T1QY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.


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    PDF 6-219A/T2D-AR2T1QY/3T 6-219A DSE-0001281 15-Dec-2009 16-219A t2d 76 transistor t2d

    t2d shindengen

    Abstract: No abstract text available
    Text: PowerCl amper •外観図 ST02D140F2 OUTLI NE Package:2F t :mm Uni カソードマーク Cathode mark 煙パワーツェナーダイオードと FRD を複合 煙面実装 煙スナバ回路用途 T2D 14 00 00 ① 特 長 品名略号 Type No. Feat ur


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    T2D 03

    Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
    Text: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V


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    PDF SH69P26 SH6610D-based 30kHz 768kHz, 400kHz T2D 03 T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04

    t2d 82

    Abstract: t2d 76 t2d 96
    Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%


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    PDF SH69P55A/K55A 10-bit 768kHz, 400kHz t2d 82 t2d 76 t2d 96

    t2d7

    Abstract: T2D 1D T2D 09 0/diode T2D7
    Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%


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    PDF SH69P55A/K55A 10-bit 768kHz, 400kHz t2d7 T2D 1D T2D 09 0/diode T2D7

    10XTV2-CT-T3

    Abstract: 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3
    Text: R XTV High-temperature self-regulating heating cables Electrical freeze protection and processtemperature maintenance for both nonhazardous and hazardous locations. The XTV family of self-regulating heating cables provides solutions for industrial freeze protection and process-temperature


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    PDF 20XTV1-CT-T2 15XTV1-CT-T2 20XTV2-CT-T2 10XTV1-CT-T3 10XTV2-CT-T3 15XTV2-CT-T3 H52711 10XTV2-CT-T3 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3

    T2D 40 DIODE

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)


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    PDF AEC-Q101 RFN20T2DFH O-220) RFN20 O220FN R1120A T2D 40 DIODE

    Untitled

    Abstract: No abstract text available
    Text: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology


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    PDF DD32512 OM2070B MCD445 hbS3T31 DD3ES17

    btw38

    Abstract: BTW38 Series
    Text: PHILIPS INTERNATIONAL 7110öEb DGb2417 T2D « P H I N bSE D BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse po larity types (anode to stud) identified by a suffix R: BTW38— 600R to


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    PDF DGb2417 BTW38 BTW38-- 1000R. 38-600R 1000R 711002b 00b2424 BTW38 Series

    T2D 07

    Abstract: UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21
    Text: UNITRODE CORP/UNITRODE, IC =J2]> J> lU N f-rl^ K LINEAR INTEGRATED CIRCUITS [jg g |B ^ General Purpose Operational Amplifier ucop o 2D FEATURES 4 • Excellent DC Specification • Low-Offset Voltage Drift— 8 /xV/°C Max • Low Power Consumption— 90 mW Max


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    PDF UCOP-02 T2D 07 UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21

    Untitled

    Abstract: No abstract text available
    Text: A F 28003 SF2994-<£o'2<S NOTES: 1. MATING: 2. MATERIALS: .2Sd Interface dimensions per Mil-C-39012/ SMA Series and Solitron/Microwave MD107. B O D Y . Stainless Steel per AMS-5640, Type 303, Cond. A. CONTACT.Beryllium Copper per QQ-C-530, Cond H.


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    PDF SF2994-< Mil-C-39012/ MD107. AMS-5640, QQ-C-530, Mil-P-19468 L-P-403, QQ-P-35A, Mil-G-45204, Mil-C-1455

    Untitled

    Abstract: No abstract text available
    Text: S C 150 C 1 http://w w w .am ericanm icrosem i.coTn/new products/highvoltagescrs/scl50c.htm Am e r i c a n M ic r o s e m ic o n d u c t o r SC150C SC150C F a r g eneral p h ta e contra! Utii* taidi a s sjiw it rnnlm te, tljrht C fjiK ruls a n d w e ld e r s e tc .


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    PDF products/highvoltagescrs/scl50c SC150C SC150C-40-60 SCT50C-8Q-120l

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUIT TO SH IBA 1. ° 1 (2) (3) (4) (5) TECHNICAL DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL The TC8890 is dedicated mask ROM for speech synthesis LSI. FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.


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    PDF TC8890N/F TC8890 128Kbits. TC8802AF, 28pin 28pin OP28pin) SDIP28pin TC8890N-XXXX

    T2D DIODE

    Abstract: T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent


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    PDF 940nm T2D DIODE T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by


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    PDF MT4D232 MT8D432 72-pin, 024-cycle 048-cycle P199S.

    Untitled

    Abstract: No abstract text available
    Text: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,


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    PDF SST5912 SST5912 300ns,

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


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    PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    5353482 ic

    Abstract: TC8802 TC8802AF t2d 46
    Text: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.


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    PDF TC8890 TC8890N/F-1 128Kbits. 28pin TC8890N-XXXX P28pin TC8890F-XXXX TC8890N/F-2 5353482 ic TC8802 TC8802AF t2d 46

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C


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    PDF TPM1919-40 0010406F 175SD TPM1919-40Ã TCH7250

    T2D 85 diode

    Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
    Text: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V


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    PDF IRLS510A O-220F 71b4m2 D3T23b T2D 85 diode T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54